PNM723T703E0-2

PNM723T703E0-2 N-Channel MOSFET Description PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） MOSFET Product Summary VDS(V) RDS(on) (Ω) VGS(th) (V) ID(A) 40 7.5@ VGS=10V 0.5 to 1.5 0.18 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage VDSS ID =10μA,VGS=0V 40 - - V Zero Gate Voltage Drain Current IDSS VDS =40V,VGS=0V - - 0.5 μA Gate-Body Leakage Current IGSS VDS =0V,VGS=±20V - - ±10 μA Gate Threshold Voltage VGS(th) VDS =VGS, ID =250μA 0.5 - 1.5 V Static Drain-Source On-Resistance RDS(ON) VGS=5V, ID =0.05A - - 7.5 Ω VGS=10V, ID =0.5A - - 7.5 Ω - - 40 pF - - 20 pF - - 5 pF - - 20 ns - - 20 ns DYNAMIC PARAMETERS Input Capacitance C ISS Output Capacitance C DSS Reverse Transfer Capacitance C RSS VGS=0V, VDS =25V, f=1MHz SWITCHING PARAMETERS Rev.06.2 Turn-On Delay Time td(on) Turn-Off Delay Time td(off) VDS=30V, VGS =10V, RG=25Ω, RL=150Ω ID =0.2A 1 www.prisemi.com N-Channel MOSFET PNM723T703E0-2 Absolute maximum rating@25℃ Rating Symbol Value Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous ID 0.18 A Pulsed ID 0.36 A TA=25℃ PD 150 mW Drain Current Total Power Dissipation Typical Characteristics 1.0 1.0 0.8 ID – Drain Current (A) ID – Drain Current (A) T=25°C VGS=6.0V 0.8 0.6 VGS=4.5V 0.4 0.2 0.4 T=125°C 0.2 VGS=3.5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 V DS – Drain Source Voltage (V) V GS – Gate to Source Voltage (V) Fig 1. Output Characteristics Fig 2. Transfer Characteristics 3.0 80 6 VGS=3.0V 5 C iss (pF) 60 4 C – Capacitance rDS(on) – On-Resistance (Ω) T=55°C 0.6 VGS=7.0V 3 2 VGS=11.5V 40 20 COss 1 CRss 0 0.0 0 0.2 0.4 0.6 0.8 0 1.0 ID – Drain Current (A) 8 12 16 20 V DS – Drain Source Voltage (V) Fig 3. On-Resistance vs. Drain Current Rev.06.2 4 Fig 4. Capacitance 2 www.prisemi.com N-Channel MOSFET PNM723T703E0-2 Product dimension (SOT-723) (0.11) Side View 0.437±0.013 R0.1-R0.15 9°(4x) 1.2±0.03 (0.4) (2) (3) (1) Unit：mm (0.2) Bottom View 1.2±0.025 0.8±0.025 0.6 0.6 0.6 0.65 0.4 0.8 1 Unit：mm Marking information P7 Ordering information Device Package Reel Shipping PNM723T703E0-2 SOT-723 (Pb-Free) 7'' 10000 / Tape & Reel Rev.06.2 3 www.prisemi.com N-Channel MOSFET PNM723T703E0-2 IMPORTANT NOTICE and are registered trademarks of Pri semi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does P risemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for eac h customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed t o be used wit h ordinary electronic equipment or devices, Should you intend to use thes e products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospac e machin ery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.2 4 www.prisemi.com