MMBF170

N-Channel Enhancement Mode MOSFET Features  Surface-mounted package  Advanced trench cell design  Extremely low threshold voltage  ESD protected ( HBM > 2KV ) SOT-23 Quick reference  BV ≧ 60 V  Ptot ≦ 0.83 W  ID ≦ 0.5 A  RDS(ON) ≦ 3 Ω @ VGS = 10 V  RDS(ON) ≦ 4 Ω @ VGS = 4.5 V Top View 1 :Gate(G) 2 :Source(S) Limiting Values Notes：* Surface Mounted on 1 in2 pad area, t ≤ 10 sec ** Pulse width ≤ 300 μs, duty cycle ≤ 2 % 1 of 6 3 :Drain(D) Electrical Characteristics ( TA = 25 °C Unless Otherwise Noted ) Notes：a : Pulse test ; pulse width ≤ 300 μs, duty cycle ≤ 2 % b : Guaranteed by design, not subject to production testing 2 of 6 Typical Characteristics 3 of 6 4 of 6 5 of 6 Package Dimensions SOT-23 6 of 6