BAT54XV2

BAT54XV2   SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE         1 for low current rectification and high speed switching applications     2 Top View Features • Extremely small surface mounting type DESCRIPTION PIN Absolute Maximum Ratings (Ta = 25 OC) Parameter 1 Cathode 2 Anode Symbol Value Unit Reverse Voltage VR 30 V Mean Rectifying Current IO 200 mA IFSM 1 A Tj 125 O Tstg - 40 to + 125 O Symbol Max. Peak Forward Surge Current (60Hz for Cyc.) Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 200 mA VF 0.5 Reverse Current at VR = 10 V IR 30 REV.08 Unit   V   1 of 3 µA   BAT54XV2     REV.08 2 of 3     BAT54XV2   PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523           ∠                     ALL ROUND         A       C                 HE   D REV.08                           UNIT mm     bp   E                             A       A 0.70 0.60 bp 0.4 0.3 C D 0.135 0.100 1.25 1.15 3 of 3 E 0.85 0.75 HE 1.7 1.5 ∠ V   0.1 5 O