ES1JW

山东晶导微电子有限公司 ES1AW THRU ES1JW Jingdao Microelectronics Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V PINNING Forward Current – 1 A PIN FEATURES • Easy pick and place • For surface mounted applications • Low profile package • Built-in strain relief • Superfast recovery times for high efficiency DESCRIPTION 1 Cathode 2 Anode 1 2 Simplified outline SOD-123FL and symbol MECHANICAL DATA • Case: SOD-123FL • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight:15mg 0.00053oz Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols Parameter ES1AW ES1BW ES1CW ES1DW ES1EW ES1GW ES1JW Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 30 A Maximum Forward Voltage at 1 A VF Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time （1） Typical Thermal Resistance （2） Operating and Storage Temperature Range 1.25 1 1.68 V IR 5 100 μA Cj 15 pF t rr 35 ns RθJA 85 °C/W T j , T stg -55 ~ +150 °C （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SOD123FL-E-ES1AW~ES1JW-1A600V Page 1 of 3 山东晶导微电子有限公司 ES1AW THRU ES1JW Jingdao Microelectronics Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive t rr 10 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 1.2 1.0 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 20 0 40 Case Temperature (°C) T J =25°C 1.0 ES1AW~ES1DW ES1EW/ES1GW 0.1 80 100 Fig.5 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.4 Typical Forward Characteristics 10 60 % of PIV.VOLTS ES1JW 0.01 100 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.001 0 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 35 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2016.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 ES1AW THRU ES1JW Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123FL ∠ALL ROUND C A ∠ALL ROUND VM D E A g Top View mil Bottom View A C D E e g HE max 1.1 0.20 2.9 1.9 1.1 0.9 3.8 min 0.9 0.12 2.6 1.7 0.8 0.7 3.5 max 43 7.9 114 75 43 35 150 min 35 4.7 102 67 31 28 138 UNIT mm g pad e E A pad HE 7° The recommended mounting pad size Marking Type number 1.2 (47) ∠ 2.0 (79) Marking code ES1AW 1.2 (47) ES1BW ESL 1.2 (47) ES1CW ES1DW ES1EW ESM ES1GW Unit： mm (mil) 2016.01 JD512264B6 ES1JW ESH Page 3 of 3