ES1JS

山东晶导微电子有限公司 ES1JS Jingdao Microelectronics Surface Mount Superfast Recovery Rectifier Reverse Voltage – 600 V PINNING Forward Current – 0.5 A PIN FEATURES • Easy pick and place • For surface mounted applications • Low profile package • Built-in strain relief • Superfast recovery times for high efficiency DESCRIPTION 1 Cathode 2 Anode 1 2 Simplified outline SOD-123FL and symbol MECHANICAL DATA • Case: SOD-123FL • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight:15mg 0.00053oz Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES1JS Units Maximum Repetitive Peak Reverse Voltage V RRM 600 V Maximum RMS voltage V RMS 420 V Maximum DC Blocking Voltage V DC 600 V Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 0.5 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 15 A Maximum Forward Voltage at 0.5 A VF 1.7 V IR 1 50 μA Cj 10 pF t rr 50 ns RθJA 110 °C/W T j , T stg -55 ~ +150 °C Parameter Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time （1） Typical Thermal Resistance （2） Operating and Storage Temperature Range （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SOD123FL-E-ES1JS-0.5A600V Page 1 of 3 山东晶导微电子有限公司 ES1JS Jingdao Microelectronics Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 25ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 0.6 0.5 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.4 0.3 0.2 0.1 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 20 0 Case Temperature (°C) 0.1 0.01 0.001 0.5 80 100 14 T J =25°C 0 60 Fig.5 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.4 Typical Forward Characteristics 1.0 40 % of PIV.VOLTS 1.0 1.5 2.0 12 10 2.5 Instaneous Forward Voltage (V) 8 6 4 2 T J =25°C f = 1.0MHz V sig = 50mV p-p 0.1 1 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2016.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 ES1JS Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123FL ∠ALL ROUND C A ∠ALL ROUND VM D E A g Top View mil Bottom View A C D E e g HE max 1.1 0.20 2.9 1.9 1.1 0.9 3.8 min 0.9 0.12 2.6 1.7 0.8 0.7 3.5 max 43 7.9 114 75 43 35 150 min 35 4.7 102 67 31 28 138 UNIT mm g pad e E A pad HE 7° The recommended mounting pad size Marking Type number 2.0 (79) ES1JS 1.2 (47) Marking code EJS 1.2 (47) 1.2 (47) ∠ Unit： mm (mil) 2016.01 JD512263B8 Page 3 of 3