WST2N7002A

WST2N7002A N-Ch MOSFET General Description Product Summery The WST2N7002A is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WST2N7002A meet the RoHS and Green Product requirement with full function reliability approved. BVDSS 60V RDSON ID 0.14Ω 700mA Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC z Networking DC-DC Power System Features z High-speed switching SOT-23N Pin Configuration z Green Device Available z ESD Protected:2KV Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 1 700 mA 1 350 mA 2.0 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 0.25 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 www.winsok.tw Page 1 Typ. Max. Unit --- 625 ℃/W Rev:1.0 May.2019 WST2N7002A N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit 60 --- --- V Reference to 25℃ , ID=1mA --- 0.05 --- V/℃ VGS=10V , ID=0.5A --- 0.14 0.45 VGS=4.5V , ID=0.2A --- 0.18 0.765 0.5 --- 3.0 V --- -3.7 --- mV/℃ VDS=60V , VGS=0V , TJ=25℃ --- --- 1 VDS=60V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA VGS=VDS , ID =250uA Ω △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±10 uA gfs Forward Transconductance VDS=5V , ID=0.3A --- 300 --- mS uA --- 6 10 Rise Time VDD=30V , VGS=10V , RG=3.3Ω, --- 8.2 9.5 Turn-Off Delay Time ID=0.5A --- 28 35 Fall Time --- 10 13.6 Ciss Input Capacitance --- 130 350 Coss Output Capacitance --- 70 120 Crss Reverse Transfer Capacitance --- 25 36 Min. Typ. Max. Unit --- --- 700 mA --- --- 2.0 A --- --- 1 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Conditions 1,4 Continuous Source Current 2,4 ISM Pulsed Source Current VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature. 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev:1.0 May.2019 WST2N7002A N-Ch MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Capacitance Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ www.winsok.tw Page 3 Rev:1.0 May.2019 WST2N7002A N-Ch MOSFET Fig.10 Switching Time Waveform Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 4 Rev:1.0 May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.