MM3Z5V1W

山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM3Z2V0W THRU MM3Z75W Silicon Planar Zener Diodes PINNING PIN FEATURES • Total power dissipation: Max. 300mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5% DESCRIPTION 1 Cathode 2 Anode 2 1 MECHANICAL DATA ▪Case: SOD-323W ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪A pprox. Weight: 5.48mg / 0.00019oz Top View Simplified outline SOD-323W and symbol Absolute Maximum Ratings And Characteristics （Ta = 25 °C） Symbol Value Unit Power Dissipation P tot 300 mW Forward Voltage at I F = 10 mA VF 0.9 V RθJA 417 °C/W T j , T stg -55 ~ +150 °C Parameter Typical thermal resistance juncting to ambient Operating and Storage Temperature Range (1) Fig.1 Maximum Continuous Power Derating 0.6 Power Dissipation ( W ) 0.5 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 T A , Temperature (°C) 2019.08 150 175 Transient Thermal Impedance（ °C /W） (1) Thermal resistance from junction to ambient at P.C.B. mounted with 2 .0" X 2.0" (5 X 5 cm) copper areas pads. Fig.2 Typical Transient Thermal Impedance 2000 1000 100 10 0.01 0.1 1 10 100 t, Pulse Duration（sec） SOD-323W-W-MM3Z2V0W~MM3Z75W-300mW Page 1 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM3Z2V0W THRU MM3Z75W Characteristics at Ta = 25°C Dynamic Impedance Zener Voltage Range （1） Type Marking V ZT（at I ZT） Min（V） Reverse Current I ZT Z ZT（at I ZT） IR at V R Max（μA） （V） Nom（V） Max（V） (mA) Max (Ω) MM3Z2V0W B0 1.8 2.0 2.15 5 100 120 0.5 MM3Z2V2W C0 2.08 2.2 2.33 5 100 120 0.7 MM3Z2V4W 1C 2.28 2.4 2.56 5 100 120 1 MM3Z2V7W 1D 2.5 2.7 2.9 5 110 120 1 MM3Z3V0W 1E 2.8 3.0 3.2 5 120 50 1 MM3Z3V3W 1F 3.1 3.3 3.5 5 130 20 1 MM3Z3V6W 1H 3.4 3.6 3.8 5 130 10 1 MM3Z3V9W 1J 3.7 3.9 4.1 5 130 5 1 MM3Z4V3W 1K 4 4.3 4.6 5 130 5 1 4.7 5 5 130 2 1 5.4 5 130 2 1.5 MM3Z4V7W 1M 4.4 MM3Z5V1W 1N 4.8 5.1 MM3Z5V6W 1P 5.2 5.6 6 5 80 1 2.5 MM3Z6V2W 1R 5.8 6.2 6.6 5 50 1 3 MM3Z6V8W 1X 6.4 6.8 7.2 5 30 0.5 3.5 MM3Z7V5W 1Y 7 7.5 7.9 5 30 0.5 4 MM3Z8V2W 1Z 7.7 8.2 8.7 5 30 0.5 5 MM3Z9V1W 2A 8.5 9.1 9.6 5 30 0.5 6 MM3Z10W 2B 9.4 10 10.6 5 30 0.1 7 MM3Z11W 2C 10.4 11 11.6 5 30 0.1 8 12.7 5 35 0.1 9 0.1 10 0.1 11 MM3Z12W 2D 11.4 12 MM3Z13W 2E 12.4 13 14.1 5 35 MM3Z15W 2F 13.8 15 15.6 5 40 MM3Z16W 2H 15.3 16 17.1 5 40 0.1 12 MM3Z18W 2J 16.8 18 19.1 5 45 0.1 13 MM3Z20W 2K 18.8 20 21.2 5 50 0.1 15 MM3Z22W 2M 20.8 22 23.3 5 55 0.1 17 MM3Z24W 2N 22.8 24 25.6 5 60 0.1 19 MM3Z27W 2P 25.1 27 28.9 2 70 0.1 21 MM3Z30W 2R 28 30 32 2 80 0.1 23 MM3Z33W 2X 31 33 35 2 80 0.1 25 0.1 27 MM3Z36W 2Y 34 36 38 2 90 MM3Z39W 2Z 37 39 41 2 100 0.1 30 MM3Z43W 3A 40 43 46 2 130 0.1 33 MM3Z47W 3B 44 47 50 2 150 0.1 36 MM3Z51W 3C 48 51 54 2 180 0.1 39 MM3Z56W 3D 52 56 60 2 200 0.1 43 MM3Z62W 3E 58 62 66 2 215 0.1 47 MM3Z68W 3F 64 68 72 2 240 0.1 52 MM3Z75W 3H 70 75 79 2 265 0.1 56 （1） V ZT is tested with pulses (20 ms) 2019.08 www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 MM3Z2V0W THRU MM3Z75W Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323W E E D b A C A1 ∠ALL ROUND L1 E1 SOD-323W mechanical data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 1.4 (55) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) 2019.08 Page 3 of 3