MMBT2222A

山东晶导微电子股份有限公司 MMBT2222A Jingdao Microelectronics co.LTD SOT-23 MMBT2222A NPN TRANSISTOR 3 FEATURES • Epitaxial planar die construction • Complementary PNP Type available(MMBT2907A) 1 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) Parameter Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Operation Junction and Storage Temperature Range Symbol Value Unit V CBO V CEO V EBO IC PC 75 40 6 600 300 V V V mA mW R thJA 417 ℃/W T J ,T stg -55~+150 ℃ 2 1.BASE 2.EMITTER 3.COLLECTOR CLASSIFICATION OF h FE Rank L H Range 100-200 200-300 Marking 1P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = 10uA, I E = 0 75 V Collector-emitter breakdown voltage V (BR)CEO I C = 10 mA, I B = 0 40 V Emitter-base breakdown voltage V (BR)EBO I E = 10uA, I C = 0 6 V Collector cut-off current Collector cut-off current I CBO V CB = 60V, I E = 0 0.01 uA I CEX V CE = 30V, V BE(off) =3V 0.01 uA Emitter cut-off current I EBO V EB = 3V, I C =0 0.1 uA h FE1 V CE = 10V, I C =150mA 100 h FE2 V CE = 10V, I C = 0.1mA 40 h FE3 V CE = 10V, I C = 500mA 42 V CE(sat) V BE(sat) I C = 500mA, I B = 50mA I C = 150mA, I B = 15mA Transition frequency fT V CE = 20V, I C = 20mA, f=100MHz Delay time td Rise time tr Storage time ts Fall time tf DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 2020.10 300 1.0 0.3 2.0 1.2 V V MH Z 300 V C C =30V,V BE(off) =-0.5V I C =150mA, I B1 =15mA 10 ns 25 ns V CC = 30V, I C = 150mA I b1 =- I B2 = 15mA 225 ns 60 ns www.sdjingdao.com Page 1 of 4 山东晶导微电子股份有限公司 MMBT2222A Jingdao Microelectronics co.LTD TYPICAL CHARACTERICS 1mA COMMON EMITTER T a =25℃ 0.20 0.9mA 0.8mA 0.7mA 0.6mA 0.9mA 0.5mA 0.10 0.4mA 0.3mA 0.2mA I B =0.1mA 0 2 4 6 8 10 12 400 200 0 25 CAPACITANCE C (pF) f=1MHz I E=0/ Ic=0 Ta=25℃ 100 C ib 10 C ob 1 10 20 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) Fig.4 C ob / C ib —— V CB / V EB 1000 0 0.1 150 V CEsat —— I C 0.2 0.1 Τ α =25℃ β=10 0 1 h FE --Ic 10 100 1000 Fig.6 V BEsat —— I C 1.6 100 10 0.1 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) DC CURRENT GAIN h FE 125 I C , COLLECTOR CURRENT (mA) COMMON EMITTER V CE =6V 1.2 Τ α =25℃ 0.8 0.4 β=10 0 1 10 100 1000 Fig.8 I C —— V BE 1000 100 T a =100℃ 10 T a =25℃ 1 0.1 0 0.2 0.4 0.6 500 600 I C , COLLECTOR CURRENT (mA) TRANSITION FREQUENCY f T (MHz) Fig.7 100 10 1 I C , COLLECTOR CURRENT (mA) COLLECTOR CURRENT I C (mA) 100 0.3 1000 f T ——I C 1000 100 0.8 COMMON EMITTER V CE =10V f=100MHz T a =25℃ 10 1 10 50 80 I C , COLLECTOR CURRENT (mA) BASE-EMMITER VOLTAGE V BE (V) 2020.10 75 0.4 REVERSE BIAS VOLTAGE V (V) Fig.5 50 AMBIENT TEMPERATURE Ta ( ℃) COLLECTOR-EMITTER VOLTAGE V CE (V) Fig.3 P C —— T a Fig.2 COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT I C (mA) Fig.1 Static characteristics 0.25 www.sdjingdao.com Page 2 of 4 山东晶导微电子股份有限公司 MMBT2222A Jingdao Microelectronics co.LTD SOT-23 Package Outline Dimensions e ∠ALL ROUND A D e M e E C a L1 L HE SOT-23 mechanical data UNIT mm mil A C D E HE max 1.1 0.15 1.4 3.0 2.6 min 0.9 0.08 1.2 2.8 2.2 e M L L1 a ∠ 0.5 1.95 0.55 0.36 0.0 (ref) (ref) 0.3 1.7 0.15 12° max 43 6 55 118 102 20 77 min 35 3 47 110 12 67 87 22 14 0.0 (ref) (ref) 6 Marking The recommended mounting pad size 0.8 (0.031) Type number Marking code MMBT2222A 1P 0.9 (0.039) 0.95 (0.037) 0.95 (0.037) 2.0 (0.079) mm Unit ： (inches) 2020.10 201010 Page 3 of 4 山东晶导微电子股份有限公司 MMBT2222A Jingdao Microelectronics co.LTD SOT-23 Packing 1.The method of packaging and dimension are shown as below figure. (Dimension in mm) 7 inX8 mm Cover Tape 3,000 pcs per reel Carrier Tape SOT-23 220mm 8 reels per box 24,000 pcs per box 5 boxes per carton 120,000 pcs per carton 105 mm m mm m 210 5m 0m 18 55 180 mm SOT-23 Embossed Carrier Tape SOT-23 Tape Leader and Trailer 2020.10 www.sdjingdao.com Page 4 of 4