MMBT3904

山东晶导微电子股份有限公司 MMBT3904 Jingdao Microelectronics co.LTD SOT-23 MMBT3904 NPN TRANSISTOR 3 FEATURES • Complementary to MMBT3906 1 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) Parameter Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Operation Junction and Storage Temperature Range Symbol Value Unit V CBO V CEO V EBO IC PC 60 40 6 200 200 V V V mA mW R thJA 625 ℃/W T J ,T stg -55~+150 ℃ 2 1.BASE 2.EMITTER 3.COLLECTOR CLASSIFICATION OF h FE 100-300 HFE L H 100-200 200-300 Rank Range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = 10uA, I E = 0 60 V Collector-emitter breakdown voltage V (BR)CEO I C = 1 mA, I B = 0 40 V Emitter-base breakdown voltage V (BR)EBO 6 V Collector cut-off current Collector cut-off current I CEX I E = 10uA, I C = 0 V CE = 30V, V BE(off) =3V I CBO Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 50 nA V CB = 60V, I E = 0 100 nA I EBO V EB = 5V, I C =0 100 nA h FE1 V CE = 1V, I C =10mA 100 h FE2 V CE = 1V, I C = 50mA 60 h FE3 V CE = 1V, I C = 100mA 30 V CE(sat) V BE(sat) I C = 50mA, I B = 5mA I C = 50mA, I B = 5mA Transition frequency fT Delay time td Rise time tr Storage time ts Fall time tf 2020.10 V CE = 20V, I C = 10mA, f=100MHz V C C =3V,V BE(off) =-0.5V I C =10mA, I B1 =1mA V CC = 3V, I C = 10mA I B1 = I B2 = 1mA www.sdjingdao.com 300 0.3 V 0.95 V MHZ 300 35 ns 35 ns 200 ns 50 ns Page 1 of 4 山东晶导微电子股份有限公司 MMBT3904 Jingdao Microelectronics co.LTD TYPICAL CHARACTERICS COMMON EMITTER T a =25℃ 80 I B =500uA I B =450uA I B =400uA I B =350uA I B =300uA I B =250uA I B =200uA 40 I B =150uA I B =100uA I B =50uA 0 4 8 12 16 20 24 400 200 0 25 CAPACITANCE C (pF) f=1MHz I E=0/ Ic=0 Ta=25℃ C ib 6 3 C ob 1 10 20 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) Fig.4 C ob / C ib —— V CB / V EB 9 0 0.1 150 V CEsat —— I C 10 1 Τ α =25℃ β=10 0.1 1 h FE --Ic 10 100 1000 Fig.6 V BEsat —— I C 1.6 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) DC CURRENT GAIN h FE 125 I C , COLLECTOR CURRENT (mA) Τ α =100℃ Τ α =25℃ 100 COMMON EMITTER V CE =1V 10 0.1 1.2 Τ α =25℃ 0.8 0.4 β=10 0 10 1 100 1000 Fig.8 TRANSITION FREQUENCY f T (MHz) 1000 100 T a =100℃ 10 T a =25℃ 1 0.1 0 0.2 0.4 0.6 0.8 1.0 200 300 I C , COLLECTOR CURRENT (mA) I C —— V BE Fig.7 100 10 1 I C , COLLECTOR CURRENT (mA) COLLECTOR CURRENT I C (mA) 100 100 1000 f T ——I C 1000 100 1.2 COMMON EMITTER V CE =20V T a =25℃ 10 1 10 50 80 I C , COLLECTOR CURRENT (mA) BASE-EMMITER VOLTAGE V BE (V) 2020.10 75 1000 REVERSE BIAS VOLTAGE V (V) Fig.5 50 AMBIENT TEMPERATURE Ta ( ℃) COLLECTOR-EMITTER VOLTAGE V CE (V) Fig.3 P C —— T a Fig.2 COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT I C (mA) Fig.1 Static characteristics 100 www.sdjingdao.com Page 2 of 4 山东晶导微电子股份有限公司 MMBT3904 Jingdao Microelectronics co.LTD SOT-23 Package Outline Dimensions e ∠ALL ROUND A D e M e E C a L1 L HE SOT-23 mechanical data UNIT mm mil A C D E HE max 1.1 0.15 1.4 3.0 2.6 min 0.9 0.08 1.2 2.8 2.2 e M L L1 a ∠ 0.5 1.95 0.55 0.36 0.0 (ref) (ref) 0.3 1.7 0.15 12° max 43 6 55 118 102 20 77 min 35 3 47 110 12 67 87 22 14 0.0 (ref) (ref) 6 Marking The recommended mounting pad size 0.8 (0.031) Type number Marking code MMBT3904 1AM 0.9 (0.039) 0.95 (0.037) 0.95 (0.037) 2.0 (0.079) mm Unit ： (inches) 2020.10 201010 Page 3 of 4 山东晶导微电子股份有限公司 MMBT3904 Jingdao Microelectronics co.LTD SOT-23 Packing 1.The method of packaging and dimension are shown as below figure. (Dimension in mm) 7 inX8 mm Cover Tape 3,000 pcs per reel Carrier Tape SOT-23 220mm 8 reels per box 24,000 pcs per box 5 boxes per carton 120,000 pcs per carton 105 mm m mm m 210 5m 0m 18 55 180 mm SOT-23 Embossed Carrier Tape SOT-23 Tape Leader and Trailer 2020.10 www.sdjingdao.com Page 4 of 4