MMBT2907A

山东晶导微电子股份有限公司 MMBT2907A Jingdao Microelectronics co.LTD SOT-23 MMBT2907A PNP TRANSISTOR 3 FEATURES • Epitaxial planar die construction • Complementary NPN Type available(MMBT2222A) 1 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) Parameter Symbol Value Unit V CBO V CEO V EBO IC PD -60 -60 -5 -600 250 V V V mA mW R thJA 500 ℃/W T J ,T stg -55~+150 ℃ Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation Thermal Resistance From Junction To Ambient Operation Junction and Storage Temperature Range 2 1.BASE 2.EMITTER 3.COLLECTOR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage V (BR)CBO V (BR)CEO I C =-10uA, I E = 0 Emitter-base breakdown voltage V (BR)EBO I E =-10uA, I C = 0 Collector cut-off current Base cut-off current Collector cut-off current I CBO I EBO I CEX h FE1 DC current gain h FE2 h FE3 h FE4 Test conditions I C =-10mA, I B = 0 Min Typ Max Unit V -60 -60 -5 V V V CB =-50V, I E = 0 -20 V EB =-3V, I C = 0 V CE =-30V, V BE =-0.5V V CE =-10V, I C =-150mA V CE =-10V, I C =-0.1mA -10 -50 V CE =-10V, I C =-1mA V CE =-10V, I C =-10mA 100 nA nA nA 300 75 100 100 50 h FE5 V CE =-10V, I C =-500mA Collector-emitter saturation voltage V CE(sat) V CE(sat) Base-emitter saturation voltage V BE(sat) V BE(sat) I C =-150mA, I B =-15mA I C =-500mA, I B =-50mA I C =-150mA, I B =-15mA -0.4 -1.6 -1.3 V V V I C =-500mA, I B =-50mA -2.6 V MH Z ns Transition frequency Delay time Rise time Storage time Fall time fT td tr V C E =-20V, I C =-50mA, f=100MHz 200 V CE =-30V, I C =-150mA,I B1 =- 15mA 10 ts V CE =-6V, I C =-150mA I B1 =- I B2 =- 15mA 225 60 tf 25 ns ns ns CLASSIFICATION O F h FE ( 1 ) HFE RANK RANGE 2020.10 100-300 L 100-200 www.sdjingdao.com H 200-300 Page 1 of 4 山东晶导微电子股份有限公司 MMBT2907A Jingdao Microelectronics co.LTD TYPICAL CHARACTERICS COMMON EMITTER T a =25℃ -200 -800uA -720uA -640uA -560uA -480uA -100 -400uA -320uA -240uA -160uA I B =-80uA -0 -2 -4 -6 -8 -10 -12 400 250 200 0 25 f=1MHz I E=0/ Ic=0 Ta=25℃ CAPACITANCE C (pF) 10 C ob 1 0.1 -0.1 -1 -10 -20 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) Fig.4 C ob / C ib —— V CB / V EB 100 C ib 100 125 150 V CEsat —— I C -0.9 Τ α =25℃ -0.6 -0.3 β=10 0 -1 -10 -100 -1000 I C , COLLECTOR CURRENT (mA) h FE --Ic Fig.6 400 V BEsat —— I C -1.6 300 200 100 COMMON EMITTER V CE =-1V 10 -0.1 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) DC CURRENT GAIN h FE 75 -1.2 REVERSE BIAS VOLTAGE V (V) Fig.5 50 AMBIENT TEMPERATURE Ta ( ℃) COLLECTOR-EMITTER VOLTAGE V CE (V) Fig.3 P C —— T a Fig.2 COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT I C (mA) Fig.1 Static characteristics -250 -1.2 Τ α =25℃ -0.8 -0.4 β=10 -0 -10 -1 -100 -600 I C , COLLECTOR CURRENT (mA) -1 -10 -100 -500 -600 I C , COLLECTOR CURRENT (mA) I C —— V BE Fig.7 COLLECTOR CURRENT I C (mA) -1000 -100 T a =100℃ -10 T a =25℃ -1 -0.1 -0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMMITER VOLTAGE V BE (V) 2020.10 www.sdjingdao.com Page 2 of 4 山东晶导微电子股份有限公司 MMBT2907A Jingdao Microelectronics co.LTD SOT-23 Package Outline Dimensions e ∠ALL ROUND A D e M e E C a L1 L HE SOT-23 mechanical data UNIT mm mil A C D E HE max 1.1 0.15 1.4 3.0 2.6 min 0.9 0.08 1.2 2.8 2.2 e M L L1 a ∠ 0.5 1.95 0.55 0.36 0.0 (ref) (ref) 0.3 1.7 0.15 12° max 43 6 55 118 102 20 77 min 35 3 47 110 12 67 87 22 14 0.0 (ref) (ref) 6 Marking The recommended mounting pad size 0.8 (0.031) Type number Marking code MMBT2907A 2F 0.9 (0.039) 0.95 (0.037) 0.95 (0.037) 2.0 (0.079) mm Unit ： (inches) 2020.10 201010 Page 3 of 4 山东晶导微电子股份有限公司 MMBT2907A Jingdao Microelectronics co.LTD SOT-23 Packing 1.The method of packaging and dimension are shown as below figure. (Dimension in mm) 7 inX8 mm Cover Tape 3,000 pcs per reel Carrier Tape SOT-23 220mm 8 reels per box 24,000 pcs per box 5 boxes per carton 120,000 pcs per carton 105 mm m mm m 210 5m 0m 18 55 180 mm SOT-23 Embossed Carrier Tape SOT-23 Tape Leader and Trailer 2020.10 www.sdjingdao.com Page 4 of 4