MMBT4401

山东晶导微电子股份有限公司 MMBT4401 Jingdao Microelectronics co.LTD SOT-23 MMBT4401 NPN TRANSISTOR 3 FEATURES • Switching Transistor 1 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) Parameter Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Operation Junction and Storage Temperature Range Symbol Value Unit V CBO V CEO V EBO IC PC 60 40 6 600 300 V V V mA mW R thJA 417 ℃/W T J ,T stg -55~+150 ℃ 2 1.BASE 2.EMITTER 3.COLLECTOR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = 100uA, I E = 0 60 V Collector-emitter breakdown voltage V (BR)CEO I C = 1 mA, I B = 0 40 V Emitter-base breakdown voltage V (BR)EBO I E = 100uA, I C = 0 6 V Collector cut-off current I CBO V CB = 50V, I E = 0 0.1 uA Collector cut-off current I CEX V CE = 35V, V EB =0.4V 0.1 uA Emitter cut-off current I EBO V EB = 5V, I C =0 0.1 uA h FE1 V CE = 1V, I C =0.1mA 20 h FE2 V CE = 1V, I C =1mA 40 h FE3 V CE = 1V, I C =10mA 80 h FE4 V CE = 1V, I C = 150mA 100 h FE5 V CE = 2V, I C = 500mA 40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage V CE(sat) V BE(sat) Transition frequency fT Delay time td Rise time tr Storage time ts Fall time tf 2020.10 300 I C = 150mA, I B = 15mA 0.4 V I C = 500mA, I B = 50mA 0.75 V I C = 150mA, I B = 15mA 0.95 V I C = 500mA, I B = 50mA 1.2 V V CE = 10V, I C = 20mA, f=100MHz V C C =30V,V BE(off) =-2V I C =150mA, I B1 =15mA V CC = 30V, I C = 150mA I B1 = I B2 = 15mA www.sdjingdao.com 250 MH Z 15 ns 20 ns 225 ns 60 ns Page 1 of 4 山东晶导微电子股份有限公司 MMBT4401 Jingdao Microelectronics co.LTD TYPICAL CHARACTERICS COMMON EMITTER T a =25℃ 0.20 I B =1mA I B =0.9mA I B =0.8mA I B =0.7mA I B =0.6mA I B =0.5mA 0.10 I B =0.4mA I B =0.3mA I B =0.2mA I B =0.1mA 0 1 2 3 4 5 6 400 200 0 25 CAPACITANCE C (pF) f=1MHz I E=0/ Ic=0 Ta=25℃ 100 C ib 10 C ob 1 10 20 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) Fig.4 C ob / C ib —— V CB / V EB 1000 1 0.1 150 V CEsat —— I C Τ α =25℃ 0.1 β=10 0.01 0.1 1 10 100 600 I C , COLLECTOR CURRENT (mA) h FE --Ic Fig.6 V BEsat —— I C 1 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) DC CURRENT GAIN h FE 125 1 Τ α =25℃ 100 COMMON EMITTER V CE =1V 0.8 10 1 100 500 Τ α =25℃ 0.6 0.4 β=10 10 0.2 0.1 600 I C , COLLECTOR CURRENT (mA) Fig.8 TRANSITION FREQUENCY f T (MHz) I C —— V BE Fig.7 COMMON EMITTER V CE =1V 100 T a =25℃ 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 10 1 100 600 I C , COLLECTOR CURRENT (mA) 1000 COLLECTOR CURRENT I C (mA) 100 10 1000 f T ——I C 1000 100 1.2 COMMON EMITTER V CE =10V T a =25℃ 10 1 10 40 50 I C , COLLECTOR CURRENT (mA) BASE-EMMITER VOLTAGE V BE (V) 2020.10 75 100 REVERSE BIAS VOLTAGE V (V) Fig.5 50 AMBIENT TEMPERATURE Ta ( ℃) COLLECTOR-EMITTER VOLTAGE V CE (V) Fig.3 P C —— T a Fig.2 COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT I C (A) Fig.1 Static characteristics 0.25 www.sdjingdao.com Page 2 of 4 山东晶导微电子股份有限公司 MMBT4401 Jingdao Microelectronics co.LTD SOT-23 Package Outline Dimensions e ∠ALL ROUND A D e M e E C a L1 L HE SOT-23 mechanical data UNIT mm mil A C D E HE max 1.1 0.15 1.4 3.0 2.6 min 0.9 0.08 1.2 2.8 2.2 e M L L1 a ∠ 0.5 1.95 0.55 0.36 0.0 (ref) (ref) 0.3 1.7 0.15 12° max 43 6 55 118 102 20 77 min 35 3 47 110 12 67 87 22 14 0.0 (ref) (ref) 6 Marking The recommended mounting pad size 0.8 (0.031) Type number Marking code MMBT4401 2X 0.9 (0.039) 0.95 (0.037) 0.95 (0.037) 2.0 (0.079) mm Unit ： (inches) 2020.10 201021 Page 3 of 4 山东晶导微电子股份有限公司 MMBT4401 Jingdao Microelectronics co.LTD SOT-23 Packing 1.The method of packaging and dimension are shown as below figure. (Dimension in mm) 7 inX8 mm Cover Tape 3,000 pcs per reel Carrier Tape SOT-23 220mm 8 reels per box 24,000 pcs per box 5 boxes per carton 120,000 pcs per carton 105 mm m mm m 210 5m 0m 18 55 180 mm SOT-23 Embossed Carrier Tape SOT-23 Tape Leader and Trailer 2020.10 www.sdjingdao.com Page 4 of 4