MMBT5401

山东晶导微电子股份有限公司 MMBT5401 Jingdao Microelectronics co.LTD SOT-23 MMBT5401 PNP TRANSISTOR 3 FEATURES • Complementary to MMBT5551 • Ideal for Medium Power Amplification and Switching 1 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) Parameter Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Dissipation Thermal Resistance From Junction To Ambient Operation Junction and Storage Temperature Range Symbol Value Unit V CBO V CEO V EBO IC PC -160 -150 -5 -0.6 0.3 V V V A W R thJA 416 ℃/W T J ,T stg -55~+150 ℃ 2 1.BASE 2.EMITTER 3.COLLECTOR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100uA, I E = 0 -160 V Collector-emitter breakdown voltage V (BR)CEO I C =-1 mA, I B = 0 -150 V Emitter-base breakdown voltage V (BR)EBO I E =-10uA, I C = 0 -5 V Collector cut-off current I CBO V CB =-120V, I E = 0 -0.1 uA Emitter cut-off current I EBO V EB =-4V, I C = 0 -0.1 uA h FE1 V CE =-5V, I C =-1mA 80 h FE2 V CE =-5V, I C =-10mA 100 h FE3 V CE =-5V, I C =-50mA 50 V CE(sat)1 I C =-10mA, I B =-1mA -0.2 V V CE(sat)2 I C =-50mA, I B =-5mA -0.5 V V BE(sat)1 I C =-10mA, I B =-1mA -1 V V BE(sat)2 I C =-50mA, I B =-5mA -1 V fT V C E =-25V, I C =-10mA, f=30MHz DC current gain 300 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency 100 MHZ CLASSIFICATION O F h FE( 1) RANK RANGE 2020.10 L H 100-200 200-300 www.sdjingdao.com Page 1 of 4 山东晶导微电子股份有限公司 MMBT5401 Jingdao Microelectronics co.LTD TYPICAL CHARACTERICS COMMON EMITTER T a =25℃ -100uA -90uA -16 -80uA -70uA -12 -60uA -50uA -40uA -8 -30uA -10uA -20uA -4 I B =-10uA -0 -3 -6 -9 400 200 0 25 CAPACITANCE C (pF) f=1MHz I E=0/ Ic=0 Ta=25℃ 10 C ob 1 0.1 -0.1 -1 -10 -20 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) Fig.4 C ob / C ib —— V CB / V EB 100 C ib V CEsat —— I C Τ α =25℃ -10 -1 β=10 -0.1 -1 -10 -100 -1000 Fig.6 V BEsat —— I C -1.6 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) DC CURRENT GAIN h FE 150 -100 h FE --Ic COMMON EMITTER V CE =-5V 300 200 100 10 -0.1 -1.2 Τ α =25℃ -0.8 -0.4 β=10 -0 -10 -1 -100 -200 Fig.8 TRANSITION FREQUENCY f T (MHz) -1000 V CE =-5V -100 T a =100℃ -10 T a =25℃ -1 -0.1 -0 -0.2 -0.4 -0.6 -0.8 -1.0 -100 -500 -600 I C , COLLECTOR CURRENT (mA) I C —— V BE Fig.7 -10 -1 I C , COLLECTOR CURRENT (mA) COLLECTOR CURRENT I C (mA) 125 I C , COLLECTOR CURRENT (mA) 400 f T —— I C 300 V CE=-5V Ta=25℃ 200 100 -1.2 0 -0 -10 -20 -30 I C , COLLECTOR CURRENT (mA) BASE-EMMITER VOLTAGE V BE (V) 2020.10 100 -1000 REVERSE BIAS VOLTAGE V (V) Fig.5 75 50 AMBIENT TEMPERATURE Ta ( ℃) COLLECTOR-EMITTER VOLTAGE V CE (V) Fig.3 P C —— T a Fig.2 COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT I C (mA) Fig.1 Static characteristics -20 www.sdjingdao.com Page 2 of 4 山东晶导微电子股份有限公司 MMBT5401 Jingdao Microelectronics co.LTD SOT-23 Package Outline Dimensions e ∠ALL ROUND A D e M e E C a L1 L HE SOT-23 mechanical data UNIT mm mil A C D E HE max 1.1 0.15 1.4 3.0 2.6 min 0.9 0.08 1.2 2.8 2.2 e M L L1 a ∠ 0.5 1.95 0.55 0.36 0.0 (ref) (ref) 0.3 1.7 0.15 12° max 43 6 55 118 102 20 77 min 35 3 47 110 12 67 87 22 14 0.0 (ref) (ref) 6 Marking The recommended mounting pad size 0.8 (0.031) Type number Marking code MMBT5401 2L 0.9 (0.039) 0.95 (0.037) 0.95 (0.037) 2.0 (0.079) mm Unit ： (inches) 2020.10 201012 Page 3 of 4 山东晶导微电子股份有限公司 MMBT5401 Jingdao Microelectronics co.LTD SOT-23 Packing 1.The method of packaging and dimension are shown as below figure. (Dimension in mm) 7 inX8 mm Cover Tape 3,000 pcs per reel Carrier Tape SOT-23 220mm 8 reels per box 24,000 pcs per box 5 boxes per carton 120,000 pcs per carton 105 mm m mm m 210 5m 0m 18 55 180 mm SOT-23 Embossed Carrier Tape SOT-23 Tape Leader and Trailer 2020.10 www.sdjingdao.com Page 4 of 4