MMBT3906

山东晶导微电子股份有限公司 MMBT3906 Jingdao Microelectronics co.LTD SOT-23 MMBT3906 PNP TRANSISTOR 3 FEATURES • As complementary type, the NPN transistor MMBT3904 is Recommended • Epitaxial planar die construction 1 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) Parameter Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Dissipation Thermal Resistance From Junction To Ambient Operation Junction and Storage Temperature Range Symbol Value Unit V CBO V CEO V EBO IC PC -40 -40 -5 -0.2 0.2 V V V A W R thJA 625 ℃/W T J ,T stg -55~+150 ℃ 2 1.BASE 2.EMITTER 3.COLLECTOR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Parameter Symbol Test conditions Max Min Unit Collector-base breakdown voltage V (BR)CBO I C =-10uA, I E = 0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1 mA, I B = 0 -40 V Emitter-base breakdown voltage V (BR)EBO I E =-10uA, I C = 0 -5 V Collector cut-off current I CBO V CB =-40V, I E = 0 Collector cut-off current I CEX Emitter cut-off current -100 nA V CE =-30V, V CE =-3V -50 nA I EBO V EB =-5V, I C = 0 -100 nA h FE1 V CE =-1V, I C =-10mA 100 h FE2 V CE =-1V, I C =-50mA 60 h FE3 V CE =-2V, I C =-100mA 30 Collector-emitter saturation voltage V CE(sat) I C =-50mA, I B =-5mA -0.3 V Base-emitter saturation voltage V BE(sat) I C =-50mA, I B =-5mA V C E =-20V, I C =-10mA, f=100MHz -0.95 V DC current gain Transition frequency fT Delay time td Rise time tr Storage time ts Fall time tf 300 MHZ 300 V CC =-3V, V BE =-0.5V I C =-10mA,I B1 = I B2 =- 1mA V CC =-3V, I C =-10mA I B1 = I B2 =- 1mA 35 ns 35 ns 225 ns 75 ns CLASSIFICATION O F h FE ( 1 ) HFE RANK RANGE 2020.10 100-300 L 100-200 www.sdjingdao.com H 200-300 Page 1 of 4 山东晶导微电子股份有限公司 MMBT3906 Jingdao Microelectronics co.LTD TYPICAL CHARACTERICS COMMON EMITTER T a =25℃ -80 I B =-500uA I B =-450uA I B =-400uA I B =-350uA I B =-300uA I B =-250uA I B =-200uA -40 I B =-150uA I B =-100uA I B =-50uA -0 -4 -8 -12 -16 -20 -24 400 200 0 25 CAPACITANCE C (pF) f=1MHz I E=0/ Ic=0 Ta=25℃ C ob C ib 1 0.1 -0.1 -1 -10 -20 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) Fig.4 C ob / C ib —— V CB / V EB 100 10 V CEsat —— I C Τ α =25℃ -10 -1 β=10 -0.1 -1 -10 -100 -1000 Fig.6 V BEsat —— I C -1.6 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) DC CURRENT GAIN h FE 150 -100 h FE --Ic COMMON EMITTER V CE =-1V 300 200 100 10 -0.1 -1.2 Τ α =25℃ -0.8 -0.4 β=10 -0 -10 -1 -100 -200 Fig.8 TRANSITION FREQUENCY f T (MHz) -1000 -100 T a =100℃ -10 T a =25℃ -1 -0.1 -0 -0.2 -0.4 -0.6 -0.8 -1.0 -200 -300 I C , COLLECTOR CURRENT (mA) I C —— V BE Fig.7 -100 -10 -1 I C , COLLECTOR CURRENT (mA) COLLECTOR CURRENT I C (mA) 125 I C , COLLECTOR CURRENT (mA) 400 f T —— I C 600 V CE=-20V Ta=25℃ 400 Τ α =25℃ 200 -1.2 -1 -10 -100 -200 -300 I C , COLLECTOR CURRENT (mA) BASE-EMMITER VOLTAGE V BE (V) 2020.10 100 -1000 REVERSE BIAS VOLTAGE V (V) Fig.5 75 50 AMBIENT TEMPERATURE Ta ( ℃) COLLECTOR-EMITTER VOLTAGE V CE (V) Fig.3 P C —— T a Fig.2 COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT I C (mA) Fig.1 Static characteristics -100 www.sdjingdao.com Page 2 of 4 山东晶导微电子股份有限公司 MMBT3906 Jingdao Microelectronics co.LTD SOT-23 Package Outline Dimensions e ∠ALL ROUND A D e M e E C a L1 L HE SOT-23 mechanical data UNIT mm mil A C D E HE max 1.1 0.15 1.4 3.0 2.6 min 0.9 0.08 1.2 2.8 2.2 e M L L1 a ∠ 0.5 1.95 0.55 0.36 0.0 (ref) (ref) 0.3 1.7 0.15 12° max 43 6 55 118 102 20 77 min 35 3 47 110 12 67 87 22 14 0.0 (ref) (ref) 6 Marking The recommended mounting pad size 0.8 (0.031) Type number Marking code MMBT3906 2A 0.9 (0.039) 0.95 (0.037) 0.95 (0.037) 2.0 (0.079) mm Unit ： (inches) 2020.10 201012 Page 3 of 4 山东晶导微电子股份有限公司 MMBT3906 Jingdao Microelectronics co.LTD SOT-23 Packing 1.The method of packaging and dimension are shown as below figure. (Dimension in mm) 7 inX8 mm Cover Tape 3,000 pcs per reel Carrier Tape SOT-23 220mm 8 reels per box 24,000 pcs per box 5 boxes per carton 120,000 pcs per carton 105 mm m mm m 210 5m 0m 18 55 180 mm SOT-23 Embossed Carrier Tape SOT-23 Tape Leader and Trailer 2020.10 www.sdjingdao.com Page 4 of 4