AO3400

AO3400 SI2305 SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect Transistor AO3400 AO3400 FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability Equivalent Circuit MARKING 3400 R 3400 1.GATE 2.SOURCE 3.DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.8 A Drain Current-Pulsed (note 1) IDM 30 A PD 350 mW RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Power Dissipation Thermal Resistance from Junction to Ambient (note 2) www.tw-gmc.com 1 AO3400 SI2305 Electrical characteristics (Ta=25℃ unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Units Off Characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-source leakage current IGSS VGS =±12V, VDS = 0V 30 V 1 µA ±100 nA VGS =10V, ID =5.8A 35 mΩ VGS =4.5V, ID =5A 40 mΩ On characteristics Drain-source on-resistance RDS(on) (note 3) Forward tranconductance gFS Gate threshold voltage Dynamic Characteristics VGS(th) VDS =VGS, ID =250µA 8 S 0.7 1.4 V 1050 pF (note 4,5) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching Characteristics VDS =5V, ID =5A VDS =15V,VGS =0V,f =1MHz VDS =0V,VGS =0V,f =1MHz 99 pF 77 pF 3.6 Ω 5 ns (note 4,5) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr VGS=10V,VDS=15V, 7 ns td(off) RL=2.7Ω,RGEN=3Ω 40 ns 6 ns 1 V tf Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) VSD IS=1A,VGS=0V Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.tw-gmc.com 1 2 AO3400 SI2305 Typical Characteristics Transfer Characteristics Output Characteristics 24 5 VGS=7V~3V Ta=25℃ Ta=25℃ Pulsed Pulsed 20 VGS=2.5V (A) (A) 4 ID ID 16 DRAIN CURRENT DRAIN CURRENT 3 12 VGS=2V 8 2 1 4 VGS=1.5V 0 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE RDS(ON) VDS 0 0.0 10 (V) 0.5 1.0 RDS(ON) ID —— 1.5 GATE TO SOURCE VOLTAGE 200 —— 2.0 VGS 2.5 (V) VGS 500 Ta=25℃ Ta=25℃ Pulsed Pulsed (m) RDS(ON) 100 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 400 150 VGS=2.5V VGS=4.5V 50 300 ID=5A 200 100 VGS=10V 0 0 5 0 10 15 DRAIN CURRENT IS —— 20 ID 25 0 VSD 10 Ta=25℃ Pulsed SOURCE CURRENT IS (A) 1 0.1 0.01 1E-3 0.0 0.3 0.6 SOURCE TO DRAIN VOLTAGE www.tw-gmc.com 0.9 VSD 2 4 6 GATE TO SOURCE VOLTAGE (A) 1.2 (V) 1 3 2 8 VGS (V) 10 AO3400 SI2305 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 1 4 2