S3MF

山东晶导微电子有限公司 S3AF THRU S3MF Jingdao Microelectronics Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V PINNING Forward Current - 3 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg / 0.00095oz DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code： S3A-S3M Simplified outline SMAF and symbol Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols S3AF S3BF S3DF S3GF S3JF S3KF S3MF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at T c = 115 °C I F(AV) 3 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 80 A Maximum Instantaneous Forward Voltage at 3 A VF 1.1 V IR 5 125 μA Cj 32 pF RθJA RθJC 50 16 °C/W T j , T stg -55 ~ +150 °C Parameter Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating and Storage Temperature Range （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SMAF-A-S3AF~S3MF-3A1KV Page 1 of 3 山东晶导微电子有限公司 S3AF THRU S3MF Jingdao Microelectronics Fig.2 Typical Instaneous Reverse Characteristics 3.0 2.0 1.0 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current ( μ A) Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =150°C T J =125°C 10 1.0 T J =75°C 0.1 T J =25°C 0.01 0 600 800 Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 10 Junction Capacitance ( pF) Instaneous Forward Current (A) 400 200 Instaneous Reverse Voltage (V) Case Temperature (°C) 1.0 T J =25°C 100 10 T J =25°C 0.1 0.4 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 120 100 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2016.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 S3AF THRU S3MF Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF ∠ALL ROUND C A ∠ALL ROUND HE g Top View mil Bottom View A C D E e g HE max 1.2 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 47 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm g pad e E A pad D E A V M 7° The recommended mounting pad size Marking Type number 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) mm Unit ： (mil) 2016.01 ∠ JD601118B0 Marking code S3AF S3A S3BF S3B S3DF S3D S3GF S3G S3JF S3J S3KF S3K S3MF S3M Page 3 of 3