AO3402

  AO3402   SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect Transistor AO3400 AO3400   FEATURES z /HDGIUHHSURGXFWLVDFTXLUHG z 6XUIDFHPRXQWSDFNDJH   APPLICATION z /RDG6ZLWFKDQGLQ3:0DSSOLFDWLRQV Equivalent Circuit MARKING 3400 R 3402 3400 1.GATE 2.SOURCE 3.DRAIN Maximum ratings (Ta=25Я unless otherwise noted) Parameter 'UDLQ6RXUFH9ROWDJH *DWH6RXUFH9ROWDJH Symbol Value 9'6  9 “  9 9*6 Unit &RQWLQXRXV'UDLQ&XUUHQW ,'  $ 3XOVHG'UDLQ&XUUHQWQRWH ,'0   $ 3RZHU'LVVLSDWLRQ 3'  : 5ș-$  Я: -XQFWLRQ7HPSHUDWXUH 7-  Я 6WRUDJH7HPSHUDWXUH 767* a Я 7KHUPDO5HVLVWDQFHIURP-XQFWLRQWR$PELHQWQRWH www.tw-gmc.com 1   AO3402   Electrical characteristics (Ta=25Я Я unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250μA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-body leakage current IGSS VGS =±12V, VDS = 0V VGS(th) VDS =VGS, ID =250μA Gate threshold voltage (note 3) Drain-source on-resistance (note 3) RDS(on) 30 V 1 μA 100 μA 1 1.4 V VGS =10V, ID =4A 45 55 PŸ VGS =4.5V, ID =3A 55 70 PŸ VGS =2.5V, ID =2A 83 10 PŸ 0.6 Forward transconductance (note 3) gFS VDS =15V, ID =4A 8 Diode forward voltage (note 3) VSD IS=1A, VGS = 0V 0.8 S 1 V DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VDS =15V,VGS =0V,f =1MHz VDS =0V,VGS =0V,f =1MHz 390 pF 54.5 pF 41 Pf 3 Ÿ 3.3 ns SWITCHING CHARACTERISTICS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time td(on) tr VGS=10V,VDS=15V, 1 ns td(off) RL=3.75ȍ,RGEN=6ȍ 21.7 ns Turn-off fall time tf 2.1 ns Total gate charge Qg 4.34 nC Gate-source Charge Qgs 0.6 nC Gate-drain Charge Qgd 1.38 nC 1.2 ns 6.3 nC Body diode reverse recovery time Body diode reverse recovery charge t. Qrr VDS =15V,VGS =4.5V,ID =4A IF=4A,dI/dt=100A/μs Notes : 1.. RepetitYHrating : Pulse width limited by junction temperature. 2.. Surface mRXnted on FR4 board , t”10s. 3. Pulse Test : Pulse Width”80μs, Duty Cycle”0.5%. 4. Guaranteed by design, not subject to producting. www.tw-gmc.com 2   AO3402   7\SLFDO&KDUDFWHULVWLFV Output Characteristics Transfer Characteristics 16 14 VGS=3V,4V,5V,10V VDS=3V 14 12 12 DRAIN CURRENT DRAIN CURRENT ID 10 8 6 VGS=1.5V 4 8 6 Ta=100ć 4 Ta=25ć 2 2 0 0.0 10 ID (A) (A) VGS=2V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE VDS 4.0 4.5 0 0.0 5.0 0.5 (V) 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE 2.5 VGS 3.0 (V) RDS(ON) —— VGS RDS(ON) —— ID 200 55 Ta=25ć 180 Pulsed VGS=2.5V 50 (m:) RDS(ON) 45 VGS=4.5V 40 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m:) 160 35 VGS=10V ID=4A 140 120 100 80 Ta=100ć 60 40 30 Ta=25ć 20 25 0.5 0 1.0 1.5 2.0 2.5 3.0 DRAIN CURRENT 3.5 ID 4.0 4.5 5.0 0 (A) 1 2 3 4 5  GATE TO SOURCE VOLTAGE 7 VGS 8 9 10 (V) Threshold Voltage IS —— VSD 5 1.0 THRESHOLD VOLTAGE VTH IS (A) (V) 1.2 SOURCE CURRENT 1 Ta=100ć 0.1 0.2 0.4 0.6 T=25ć 0.8 1.0 VOLTA SOURCE TO DRAIN VOLTAGE www.tw-gmc.com 1.2 0.8 0.6 0.4 0.2 25 1.4 VSD (V) ID=250uA 50 75 JUNCTION TEMPERATURE 3 100 Tj (ć ) 125   AO3402   3$&.$*(287/,1( 3ODVWLFVXUIDFHPRXQWHGSDFNDJHOHDGV www.tw-gmc.com 627 4