S9012

山东晶导微电子股份有限公司 S9012 Jingdao Microelectronics co.LTD General Purpose Transistor PNP Silicon FEATURES • High Collector Current • Complementary To S9013 • Excellent hFE Linearity SOT-23 3 COLLECTOOR 3 1 BASE DEVICE MARKING S9012 = 2T1 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO -25 Vdc Collector–Base Voltage V CBO -40 Vdc Emitter–Base Voltage V EBO -5.0 Vdc IC -500 mAdc Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 300 mW T J ,T stg –55 to +150 °C Total Device Dissipation FR– 5 Board, (1) T A = 25°C Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage(3) ( I C = -1.0 mAdc, I B = 0) V (BR)CEO -25 – Vdc Collector–Base Breakdown Voltage ( I C = -0.1 mAdc, I E = 0) V (BR)CBO -40 – Vdc Emitter–Base Breakdown Voltage ( I E = -0.1 mAdc, I C = 0) V (BR)EBO -5.0 – Vdc Collector cut-off current ( V CB = -40 Vdc, I E = 0 ) I CBO – -0.1 uAdc Collector cut-off current ( V C E = - 20 Vdc, I B = 0 ) I C EO – -0.1 uAdc Emitter cut-off current ( V EB = -5 Vdc, I C = 0 ) I EBO – -0.1 uAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width