S9013

山东晶导微电子股份有限公司 S9013 Jingdao Microelectronics co.LTD General Purpose Transistor NPN Silicon FEATURES • High Collector Current. • Complementary to S9012. • Excellent hFE Linearity. SOT-23 3 3 COLLECTOOR 1 BASE DEVICE MARKING S9013 = J3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V EBO 5.0 Vdc IC 500 mAdc Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 300 mW T J ,T stg –55 to +150 °C Total Device Dissipation FR– 5 Board, (1) T A = 25°C Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage(3) ( I C = 1.0 mAdc, I B = 0) V (BR)CEO 25 – Vdc Collector–Base Breakdown Voltage ( I C = 100 µAdc, I E = 0) V (BR)CBO 40 – Vdc Emitter–Base Breakdown Voltage ( I E = 100 µAdc, I C = 0) V (BR)EBO 5.0 – Vdc Collector cut-off current ( V CB = 40 Vdc, I E = 0 ) I CBO – 0.1 uAdc Collector cut-off current ( V C E = 20 Vdc, I B = 0 ) I C EO – 0.1 uAdc Emitter cut-off current ( V EB = 5 Vdc, I C = 0 ) I EBO – 0.1 uAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width