MMBT5401

MMBT5401 MMBT3904 AO3400 SI2305 TRANSISTOR (PNP) MMBT5401 FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching SOT-23 1．BASE 2．EMITTER 3．COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol IC= -100µA, V(BR)CEO IC= -1mA, V(BR)EBO IE= -10µA, IC=0 Emitter cut-off current DC current gain Base-emitter saturation voltage IE=0 IB=0 MIN MAX -160 -150 V -5 V -0.1 ICBO VCB=-120 V, IE=0 IEBO VEB=-4V , IC=0 hFE1 VCE= -5V, IC= -1mA 80 hFE2 VCE= -5V, IC=-10mA 100 hFE3 VCE= -5V, IC=-50mA 50 -0.1 IB= -5mA -0.5 VBE(sat) IC= -50 mA, IB= -5mA -1 1 VCE= -5V, IC= -10mA 100 µA µA 300 IC=-50 mA, fT UNIT V VCE(sat) Transition frequency www.tw-gmc.com conditions V(BR)CBO Collector cut-off current Collector-emitter saturation voltage Test V V MHz MMBT5401 MMBT3904 AO3400 SI2305 Typical Characteristics Static Characteristic -20 -100uA -18 -70uA DC CURRENT GAIN hFE IC COLLECTOR CURRENT (mA) o Ta=100 C 250 -80uA -14 200 -12 -60uA -10 150 -50uA -8 -40uA -6 o Ta=25 C 100 -30uA -4 50 -20uA -2 -0 IC VCE=-5V COMMON EMITTER Ta=25℃ -90uA -16 hFE — — 300 IB=-10uA -0 -3 0 -9 -6 COLLECTOR-EMITTER VOLTAGE VCE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -0.6 Ta=100℃ -0.2 -0.0 -0.1 -1 -10 IC IC -0.1 Ta=25℃ -1 (mA) -10 Cob / Cib 100 IC (mA) —— VCB / VEB VCE=-5V f=1MHz IE=0 / IC=0 o Ta=25 C IC Cib C -10 CAPACITANCE (pF) COLLECTOR CURRENT (mA) -600 -100 COLLECTOR CURRENT IC —— V BE -100 (mA) Ta=100℃ -0.01 -0.1 -600 -100 COLLECTOR CURRENT IC β=10 Ta=25℃ -0.4 -600 -100 VCEsat —— -1 β=10 -0.8 -10 COLLECTOR CURRENT —— IC VBEsat -1.0 -1 (V) o Ta=100 C 10 Ta=25℃ -1 -0.1 -0.0 -0.2 -0.4 -0.8 -0.6 BASE- EMITTER VOLTAGE fT 300 Cob 1 -0.5 -1.0 -1 -10 REVERSE VOLTAGE VBE(V) —— IC Pc 0.4 —— V (V) Ta 0.3 200 COLLECTOR POWER DISSIPATION Pc (W) TRANSITION FREQUENCY (MHz) fT 250 0.2 150 100 0.1 50 0 VCE=-5V o Ta=25 C -0 -5 -10 -15 COLLECTOR CURRENT www.tw-gmc.com -25 -20 IC 0.0 -30 0 25 50 75 AMBIENT TEMPERATURE (mA) 1 2 100 Ta 125 (℃) 150 MMBT5401 MMBT3904 AO3400 SI2305 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 1 3 2