MMBT3904

MMBT3904 AO3400 SI2305 TRANSISTOR (NPN) MMBT3904 FEATURES • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 MARKING: 1AM 1．BASE 2．EMITTER 3．COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Total Device Dissipation 200 mW RθJA ThermalResistanceFromJunction toAmbient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature ℃ -55 ~ +150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB= 60V, IE=0 0.1 μA Collector cut-off current ICEX VCE= 30V, VBE(off)=3V 50 nA IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE= 1V, IC=10mA 100 hFE(2) VCE= 1V, IC= 50mA 60 hFE(3) VCE= 1V, IC= 100mA 30 Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V Emitter cut-off current DC current gain Transition frequency fT VCE= 20V, IC=10mA, f=100MHz Delay Time td VCC= 3V, Rise Time tr ts tf IC= 10mA, IB1=-IB2=1.0mA Storage Time Fall Time www.tw-gmc.com VCC= 3V, VBE=-0.5V IC=10mA, IB1=-IB2=1mA 1 300 300 MHz 35 nS 35 nS 200 nS 50 nS MMBT3904 AO3400 SI2305 Typical Characteristics aracteristic Static Ch IC COLLECTOR CURRENT (mA) 300uA 250uA 200uA 40 150uA Ta=25℃ 200 100 100uA 20 Ta=100℃ 300 350uA 60 IC — — COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 500uA 450uA 400uA 80 hFE 400 DC CURRENT GAIN hFE 100 IB=50uA 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat 600 — VCE 0 0.1 20 1 0.3 IC VBEsat 1.2 30 10 3 COLLECTOR CURRENT (V) IC 100 (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 Ta=25℃ 0.8 Ta=100℃ 100 Ta=25℃ Ta=100℃ 0.4 30 β=10 β=10 10 1 10 3 IC 100 100 30 COLLECTOR CURRENT IC 0.0 200 1 10 3 (mA) —— VBE Cob/ Cib 9 — — IC VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ C 10 300 (mA) Cib Ta=100℃ CAPACITANCE (pF) COLLECTOR CURRENT (mA) IC COMMON EMITTER VCE=1V 30 3 Ta=25℃ 1 3 Cob 0.3 0.1 0.2 0.6 0.4 0.8 1.0 1 0.1 1.2 fT 300 1 0.3 BASE-EMITTER VOLTAGE VBE (V) —— IC PC 250 VCE=20V Ta=25℃ 10 3 REVERSE VOLTAGE —— V 20 (V) Ta 200 fT 200 150 COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY (MHz) 100 30 COLLECTOR CURRENT 100 50 100 1 3 10 COLLECTOR CURRENT www.tw-gmc.com 30 IC 0 60 (mA) 0 25 50 75 AMBIENT TEMPERATURE 1 2 100 Ta 125 (℃ ) 150 MMBT3904 AO3400 SI2305 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 1 3 2