AO3407

AO3401 SI2305 SI2301 AO3407 SOT-23 Plastic-Encap sulate MOSFETS P-Channel Enhancement Mode Field Effect Transistor SI2301 General Description AO3407 uses advanced trench technology to provide excellent The BC3407 RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING Equivalent Circuit A1SHB A19T A09T 3407 1.GATE 2.SOURCE 3.DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -4.1 A Power Dissipation PD 350 mW RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55~+150 ℃ Thermal Resistance from Junction to Ambient www.tw-gmc.com 1 AO3407 AO3401 SI2305 SI2301 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static characteristics Drain-source breakdown voltage BVDSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS =-10V, ID =-4.1A 60 mΩ VGS =-4.5V, ID =-3A 87 mΩ Drain-source on-resistance (note 1) Forward tranconductance (note 1) Gate threshold voltage Diode forward voltage (note 1) RDS(on) gFS VGS(th) VSD -30 VDS =-5V, ID =-4A 5.5 VDS =VGS, ID =-250µA -1 V S IS=-1A,VGS=0V -3 V -1 V Dynamic characteristics (note 2) Input capacitance Ciss 700 pF Output capacitance Coss 120 pF Reverse transfer capacitance Crss 75 pF td(on) 8.6 ns VGS=-10V,VDS=-15V, 5.0 ns RL=3.6Ω,RGEN=3Ω 28.2 ns 13.5 ns VDS =-15V,VGS =0V,f =1MHz Switching Characteristics (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Notes: 1. 2. Pulse test: Pulse width ≤300µs, duty cycle ≤2%. These parameters have no way to verify. www.tw-gmc.com 2 AO3407 AO3401 SI2305 SI2301 Typical Characteristics Output Characteristics Transfer Characteristics -25 -5 VGS=-10V Ta=25℃ VGS=-4.5V -8V -5V -20 -4 VGS=-3.5V -10 ID -15 -3 DRAIN CURRENT DRAIN CURRENT ID (A) (A) VGS=-4V -2 -5 -1 -0 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) VDS -5 -0 (V) -1 -2 GATE TO SOURCE VOLTAGE -3 VGS -4 (V) RDS(ON) —— VGS —— ID 140 100 Ta=25℃ Ta=25℃ 120 (mΩ) (mΩ) 80 100 RDS(ON) 60 ON-RESISTANCE ON-RESISTANCE RDS(ON) VGS=-4.5V VGS=-10V 40 80 ID=-4.3A 60 40 20 20 -0 -2 -4 -6 DRAIN CURRENT IS —— ID -8 -10 -2 (A) VSD -10 Ta=25℃ -0.1 SOURCE CURRENT IS (A) -1 -0.01 -1E-3 -1E-4 -1E-5 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.tw-gmc.com -1.0 VSD -4 -6 GATE TO SOURCE VOLTAGE -1.2 (V) 3 -8 VGS (V) -10 AO3407 AO3401 SI2305 SI2301 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 3 4