SI2301

SI2301 SI2305 AO3401 SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V( D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit A1SHB A19T A09T 1.GATE 2.SOURCE 3.DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.8 Pulsed Drain Current IDM -10 Continuous Source-Drain Diode Current IS -0.72 Maximum Power Dissipation PD 0.35 W ℃/W Thermal Resistance from Junction to Ambient(t ≤5s) R θJA 357 Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 www.tw-gmc.com 1 Unit V A ℃ AO3401 SI2305 SI2301 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 V -1 Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA Drain-source on-state resistance a Forward transconductance RDS(on) a gfs VGS =-4.5V, ID =-2.8A 0.090 0.112 VGS =-2.5V, ID =-2.0A 0.110 0.142 VDS =-5V, ID =-2.8A 6.5 Ω S b Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time 405 VDS =-10V,VGS =0V,f =1MHz 55 VDS =-10V,VGS =-4.5V,ID =-3A VDS =-10V,VGS =-2.5V,ID =-3A tr Turn-off delay time td(off) Fall time 5.5 10 3.3 6 nC 0.7 1.3 f =1MHz td(on) Rise time pF 75 VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω tf Ω 6.0 11 20 35 60 30 50 10 20 ns Drain-source body diode characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage a IS VSD A -10 ISM IS=-0.7A Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. www.tw-gmc.com -1.3 TC=25℃ 2 -0.8 -1.2 V AO3401 SI2305 SI2301 Typical Characteristics Output Characteristics Transfer Characteristics -10 -14 Ta=25℃ VGS= -4.0V,-3.5V,-3.0V,-2.5V Ta=25℃ Pulsed Pulsed VGS=-2.0V -12 -8 (A) -6 VGS=-1.5V -4 ID -8 -6 DRAIN CURRENT DRAIN CURRENT ID (A) -10 -4 -2 -2 VGS=-1.0V -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) VDS -0 -0.0 -4 (V) ID —— RDS(ON) —— -2.0 VGS -2.5 (V) VGS Ta=25℃ Ta=25℃ Pulsed Pulsed (mΩ) 200 (mΩ) 60 RDS(ON) VGS=-2.5V 90 ON-RESISTANCE RDS(ON) ON-RESISTANCE -1.5 250 120 VGS=-4.5V 30 0 150 100 ID=-3.6A 50 0 -0 -2 -4 -6 DRAIN CURRENT IS —— ID -8 -10 -0 (A) VSD Ta=25℃ Pulsed -0.3 IS -0.1 -0.03 -0.01 -3E-3 -1E-3 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.tw-gmc.com -1.0 VSD -2 -4 GATE TO SOURCE VOLTAGE -1 (A) -1.0 GATE TO SOURCE VOLTAGE 150 SOURCE CURRENT -0.5 -1.2 (V) 3 -6 VGS (V) -8 AO3401 SI2305 SI2301 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 3 4