SS8050

山东晶导微电子股份有限公司 SS8050 Jingdao Microelectronics co.LTD S S 8050 SOT-23 NPN TRANSISTOR 3 FEATURES • Complimentary to SS8550 1 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) Parameter Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Operation Junction and Storage Temperature Range Symbol Value Unit V CBO V CEO V EBO IC PC 40 25 5 1.5 300 V V V A mW R thJA 417 ℃/W T J ,T stg -55~+150 ℃ 2 1.BASE 2.EMITTER 3.COLLECTOR CLASSIFICATION OF h FE1 Rank L H J Range 120-200 200-350 300-400 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = 100uA, I E = 0 40 V Collector-emitter breakdown voltage V (BR)CEO I C = 0.1 mA, I B = 0 25 V Emitter-base breakdown voltage V (BR)EBO I E = 100uA, I C = 0 5 V Collector cut-off current I CBO V CB = 40V, I E = 0 0.1 uA Collector cut-off current I CEO V CE = 20V, I E =0 0.1 uA Emitter cut-off current I EBO V EB = 5V, I C =0 0.1 uA h FE1 V CE = 1V, I C = 100mA 120 h FE2 V CE = 1V, I C = 800mA 40 Collector-emitter saturation voltage V CE(sat) I C = 800mA, I B = 80mA 0.5 V Base-emitter saturation voltage V BE(sat) I C = 800mA, I B = 80mA 1.2 V fT V CE = 10V, I C = 50mA, f=30MHz 400 DC current gain Transition frequency 2020.10 www.sdjingdao.com 100 MH Z Page 1 of 4 山东晶导微电子股份有限公司 SS8050 Jingdao Microelectronics co.LTD TYPICAL CHARACTERICS I B=500uA 120 COMMON EMITTER T a =25℃ I B=450uA I B=400uA I B=350uA 80 I B=300uA I B=250uA I B=200uA 40 I B=150uA I B=100uA I B=50uA 0 0.5 1.0 1.5 2.0 2.5 3.0 400 200 0 25 f=1MHz I E=0/ Ic=0 Ta=25℃ C ib C ob 10 1 0.1 1 10 20 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) CAPACITANCE C (pF) Fig.4 C ob / C ib —— V CB / V EB Fig.3 150 V CEsat —— I C Τ α =25℃ 10 1 β=10 0.1 1 h FE --Ic 10 100 1000 1500 Fig.6 V BEsat —— I C 1.6 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) DC CURRENT GAIN h FE 125 I C , COLLECTOR CURRENT (mA) Τ α =100℃ Τ α =25℃ 100 COMMON EMITTER V CE =1V 10 0.1 1.2 Τ α =25℃ 0.8 0.4 β=10 0 10 1 100 1000 1000 Fig.8 TRANSITION FREQUENCY f T (MHz) 1500 1000 T a =100℃ 100 T a =25℃ 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1000 1500 I C , COLLECTOR CURRENT (mA) I C —— V BE Fig.7 100 10 1 I C , COLLECTOR CURRENT (mA) COLLECTOR CURRENT I C (mA) 100 100 1000 f T ——I C 1000 100 1.2 COMMON EMITTER V CE =10V T a =25℃ 10 1 10 100 I C , COLLECTOR CURRENT (mA) BASE-EMMITER VOLTAGE V BE (V) 2020.10 75 1000 REVERSE BIAS VOLTAGE V (V) Fig.5 50 AMBIENT TEMPERATURE Ta ( ℃) COLLECTOR-EMITTER VOLTAGE V CE (V) 100 P C —— T a Fig.2 COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT I C (mA) Fig.1 Static characteristics 140 www.sdjingdao.com Page 2 of 4 山东晶导微电子股份有限公司 SS8050 Jingdao Microelectronics co.LTD SOT-23 Package Outline Dimensions e ∠ALL ROUND A D e M e E C a L1 L HE SOT-23 mechanical data UNIT mm mil A C D E HE max 1.1 0.15 1.4 3.0 2.6 min 0.9 0.08 1.2 2.8 2.2 e M L L1 a ∠ 0.5 1.95 0.55 0.36 0.0 (ref) (ref) 0.3 1.7 0.15 12° max 43 6 55 118 102 20 77 min 35 3 47 110 12 67 87 22 14 0.0 (ref) (ref) 6 Marking The recommended mounting pad size 0.8 (0.031) Type number Marking code SS8050 Y1 0.9 (0.039) 0.95 (0.037) 0.95 (0.037) 2.0 (0.079) mm Unit ： (inches) 2020.10 201013 Page 3 of 4 山东晶导微电子股份有限公司 SS8050 Jingdao Microelectronics co.LTD SOT-23 Packing 1.The method of packaging and dimension are shown as below figure. (Dimension in mm) 7 inX8 mm Cover Tape 3,000 pcs per reel Carrier Tape SOT-23 220mm 8 reels per box 24,000 pcs per box 5 boxes per carton 120,000 pcs per carton 105 mm m mm m 210 5m 0m 18 55 180 mm SOT-23 Embossed Carrier Tape SOT-23 Tape Leader and Trailer 2020.10 www.sdjingdao.com Page 4 of 4