SI2305

AO3401 SI2305 SOT-23 Plastic-Encapsulate MOSFETS P-Channel 12-V( D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit A09T A19T 2305 1.GATE 2.SOURCE 3.DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -4.1 Continuous Source-Drain Diode Current IS -0.8 Maximum Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature TSTG -50 ~+150 ℃ Thermal Resistance from Junction to Ambient(t≤10s) www.tw-gmc.com 1 V A AO3401 SI2305 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage Gate-source threshold voltage V(BR)DSS VGS = 0V, ID =-250µA VGS(th) VDS =VGS, ID =-250µA -12 V -0.5 -0.9 Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-8V, VGS =0V -1 µA a Drain-source on-state resistance Forward transconductance a RDS(on) gfs VGS =-4.5V, ID =-3.5A 0.045 VGS =-2.5V, ID =-3A 0.060 VGS =-1.8V,ID=-2.0A 0.090 VDS =-5V, ID =-4.1A 6 Ω S Dynamic b,c Input capacitance Ciss b,c Output capacitance Coss Reverse transfer capacitance b,c 740 VDS =-4V,VGS =0V,f =1MHz 190 Crss VDS =-4V,VGS =-4.5V, Total gate charge b Qg b Gate-source charge Qgs b Gate-drain charge ID =-4.1A VDS =-4V,VGS =-2.5V, Gate resistance Rg b,c Turn-on delay time Rise time tr b,c 15 4.5 9 nC 7 14 Ω 13 20 35 53 32 48 1.6 f =1MHz td(on) b,c 7.8 1.2 ID =-4.1A Qgd b,c pF 290 VDD=-4V, RL=1.2Ω, ID ≈-3.3A, 1.4 Turn-off Delay time td(off) b,c tf 10 20 td(on) 5 10 11 17 22 33 16 24 Fall time b,c Turn-on delay time b,c Rise time tr b,c Turn-off delay time td(off) b,c tf Fall time VGEN=-4.5V,Rg=1Ω VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω ns Drain-source body diode characteristics Continuous source-drain diode current Pulse diode forward current a Body ciode voltage IS VSD A -10 ISM IF=-3.3A Note : a. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing. c. These parameters have no way to verify. www.tw-gmc.com -1.4 TC=25℃ 2 -0.8 -1.2 V AO3401 SI2305 Typical Characteristics Output Characteristics Transfer Characteristics -16 -5 VDS=-3V -4 ID (A) VGS= -4.5V、 -4V、 -3.5V、-3V、-2.5V ID VGS=-2V DRAIN CURRENT DRAIN CURRENT (A) -12 -8 VGS=-1.5V -3 -2 Ta=100℃ Ta=25℃ Pulsed Pulsed -4 -1 -0 -0.0 -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE VDS -4 (V) -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE VGS -2.0 (V) RDS(ON) —— VGS RDS(ON) —— ID 200 180 Ta=25℃ (mΩ) 150 RDS(ON) 120 ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) Pulsed VGS=-1.8V 60 VGS=-2.5V 100 ID=-3.3A Ta=100℃ 50 Pulsed Ta=25℃ VGS=-4.5V Pulsed 0 0 -0 -2 -4 -6 -8 DRAIN CURRENT ID -10 -0 -12 (A) -2 -10 (V) (V) -1.0 -0.8 ID=-250uA THRESHOLD VOLTAGE VTH IS (A) SOURCE CURRENT -6 VGS Threshold Voltage IS —— VSD -1 -4 GATE TO SOURCE VOLTAGE Ta=100℃ Pulsed Ta=25℃ Pulsed -0.1 -0.4 -0.8 -1.2 SOURCE TO DRAIN VOLTAGE www.tw-gmc.com -1.6 -0.6 -0.4 -0.2 -0.0 25 -2.0 50 75 AMBIENT TEMPERATURE VSD (V) 3 100 Ta (℃ ) 125 AO3401 SI2305 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 4