S8550

S8550 BIPOLAR TRANSISTOR (PNP) FEATURES  Complementary to S8050  Excellent hFE Linearity  High Collector Current  Surface Mount device SOT-23 MECHANICAL DATA      Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -40 -25 -5 -500 300 417 150 -55 ~+150 Unit V V V mA mW °C/W °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min V(BR)CBO -40 V IC=-100uA，IE=0 Collector-emitter breakdown voltage V(BR)CEO -25 V IC=-1mA，IB=0 Emitter-base breakdown voltage -5 V IE=-100uA，IC=0 Collector-base breakdown voltage V(BR)EBO Typ Max Unit Conditions Collector cut-off current ICBO -0.1 uA VCB=-40V, IE=0 Collector cut-off current ICEO -0.1 uA VCE=-20V, IB=0 Emitter cut-off current IEBO -0.1 uA VEB=-3V, IC=0 DC current gain hFE1 120 hFE2 50 VCE=-1V, IC=-50mA 400 VCE=-1V, IC=-500mA Collector-emitter saturation voltage VCE(sat) -0.6 V IC=-500mA，IB=-50mA Base-emitter saturation voltage VBE(sat) -1.2 V IC=-500mA，IB=-50mA Transition frequency CLASSIFICATION OF hFE Rank Range Marking ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD fT L 120-200 150 MHz H 200-350 2TY E-mail:hkt@heketai.com VCE=-6V, IC=-20mA,f=30MHz J 300-400 1/4 S8550 BIPOLAR TRANSISTOR (PNP) Typical Characteristics IC -90 —— VCE hFE -400uA -360uA -70 Ta=100℃ -320uA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) -80 -280uA -60 -240uA -50 -200uA -40 -160uA -30 -120uA Ta=25℃ 100 -80uA -20 IB=-40uA -10 COMMON EMITTER VCE=-1V -0 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE —— -10 -1 -10 -100 COLLECTOR CURRENT IC VCEsat -500 2 5℃ T a= -800 10 -12 VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) VBEsat -1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) IC —— 500 COMMON EMITTER Ta=25℃ ℃ 100 T a= IC -500 (mA) IC —— -100 0℃ 10 T a= ℃ 25 T a= β=10 β=10 -10 -400 -10 -100 COLLECTOR CURRENT IC —— -10 fT —— 400 T =2 5℃ a -100 -10 COMMON EMITTER VCE=-1V IC -500 (mA) IC 100 COMMON EMITTER VCE=-6V Ta=25℃ 10 -1 -0 -300 -600 -900 -1 -1200 -10 Cob/Cib —— VCB/VEB Cib 10 PC 400 COLLECTOR POWER DISSIPATION PC (mW) 50 -100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) CAPACITANCE C (pF) -100 COLLECTOR CURRENT (mA) VBE T =1 00 ℃ a COLLECTOR CURRENT IC (mA) -500 IC -1 -500 TRANSITION FREQUENCY fT (MHz) -1 Cob f=1MHz IE=0/IC=0 —— IC (mA) Ta 300 200 100 Ta=25 ℃ 1 -0.1 0 -1 REVERSE VOLTAGE -10 V ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD (V) -20 0 25 50 75 100 AMBIENT TEMPERATURE E-mail:hkt@heketai.com Ta 125 150 (℃ ) 2/4 S8550 BIPOLAR TRANSISTOR (PNP) SOT-23 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 RE F 0.079 0.022 REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3/4 S8550 BIPOLAR TRANSISTOR (PNP) SOT-23 Tape and Reel SOT-23 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-23 3.15 2.77 1.22 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-23 Tape Leader and Trailer SOT-23 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4/4