USBLC6-2SC6

USBLC6-2SC6 ESD Protection Array Description Features The usblc6-2sc6 is a low capacitance ESD Array, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high-speed data lines. The usblc6-2sc6 has an ultra low capacitance with a typical value at 0.4pF, and complies with the IEC 61000-4-2 (ESD) standard with ±30kV air and ±25kV contact discharge. It is assembled into a 6-pin lead-free SOT23-6 package. The low capacitance array make it ideal for four high speed data and transmission line. This device is optimized for ESD protection of portable electronics.       Mechanical Characteristics Applications            Package: SOT23-6 Lead Finish: Matte Tin UL Flammability Classification Rating 94V-0 Case Material: “Green” Molding Compound Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Below Dimensions and Pin Configuration I/O 1 VCC 6 5 Ultra low capacitance: 0.4pF typical (I/O to I/O) Ultra low leakage: nA level Low operating voltage: 5V Low clamping voltage 2 data lines and one power line protects Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±25kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) : 5A(8/20μs)  ROHS Compliant USB 2.0 Ports Digital video interface(DVI) Monitor and Flat Panel Displays Gigabit Ethernet Marking Information I/O 2 4 0552S YYWW 1 2 3 I/O 1 GND I/O 2 0552S = Device Marking Code YYWW=Date Code Dot denotes Pin1 Circuit and Pin Schematic 1/4 USBLC6-2SC6 ESD Protection Array Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power（tp=8/20μs） PPP 100 W Peak Pulse Current（tp=8/20μs） IPP 5 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range ±25 kV TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 5 V 6 Test Condition V IT = 1mA Reverse Leakage Current IR 0.5 µA VRWM = 5V Clamping Voltage VC 10 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 20 V IPP = 5A (8 x 20µs pulse) Junction Capacitance CJ 0.6 0.8 pF VR = 0V, f = 1MHz, any I/O pin to ground Junction Capacitance CJ 0.3 0.4 pF VR = 0V, f = 1MHz, between I/O pins 2/4 USBLC6-2SC6 ESD Protection Array 10 2.0 Peak Pulse Power_Ppp (W) Juncxtion Capacitance_Cj (pF) Typical Performance Characteristics (TA=25℃ unless otherwise Specified) 1.6 1.2 0.8 0.4 0.0 1 0.1 0.01 0 1 2 3 4 5 0.1 10 100 1000 Pulse Duration_tp (us) Peak Pulse Power vs. Pulse Time 50 120 40 100 % of Rated Power Clamping Voltage_Vc (V) Reverse Voltage_VR (V) Junction Capacitance vs. Reverse Voltage 1 30 20 10 80 60 40 20 0 0 2 4 6 8 Peak Pulse Current_Ipp (A) 0 10 0 25 50 75 100 125 Ambient Temperature_Ta(℃) Power Derating Curve Clamping Voltage vs. Peak Pulse Current 8 X 20μs Pulse Waveform ESD Clamping Voltage 8 kV Contact per IEC61000−4−2 3/4 150 USBLC6-2SC6 ESD Protection Array SOT23-6 Package Outline Drawing SYM A A1 A2 b c D E1 E e e1 N aaa ccc DIMENSIONS MILLIMETERS MIN NOM MAX MIN 0.90 1.45 0.035 0.00 0.15 0.000 0.90 1.15 1.30 0.035 0.25 0.50 0.010 0.08 0.22 0.003 2.80 2.90 3.10 0.110 1.50 1.60 1.75 0.060 2.80 BSC 0.95 BSC 1.90 BSC 6 0.10 0.20 INCHES NOM 0.045 0.114 0.063 0.110 BSC 0.037 BSC 0.075 BSC 6 0.004 0.008 Suggested Land Pattern DIMENSIONS MILLIMETERS 2.50 1.40 0.95 0.60 1.10 3.60 SYM C G P X Y Z 4/4 INCHES 0.098 0.055 0.037 0.024 0.043 0.141 MAX 0.057 0.006 0.051 0.020 0.009 0.122 0.069