SS8050

SS8050 SOT-23 Plastic-Encapsulate Transistors(NPN) Transistors RHOS Features SOT-23  High Collector Current  Complementary to SS8550 Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified.) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 40 V 2. EMITTER VCEO Collector-Emitter Voltage 25 V 3. COLLECTOR VEBO Emitter-Base Voltage 5 V 1.5 A MARKING: Y1 IC Collector Current PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE=1V, IC= 100mA 120 hFE(2) VCE=1V, IC= 800mA 40 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V fT Transition frequency VCE=10V, IC= 50mA f=30MHz 100 MHz CLASSIFICATION OF hFE(1) Rank Range Rev 8: Nov 2014 L H J 120-200 200-350 300-400 www.born-tw.com Page 1 of 2 SS8050 SOT-23 Plastic-Encapsulate Transistors(NPN) Transistors RHOS 1000 0.5 VCE = 1V 0.4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 3.0mA IB = 2.5mA IB = 2.0mA 0.3 IB = 1.5mA 0.2 IB = 1.0mA 0.1 100 10 IB = 0.5mA 0 0.4 0.8 1.2 1.6 1 0.1 2.0 1 10000 VCE = 1V VBE(sat) 1000 100 VCE(sat) 10 0.1 1 10 100 10 1 0.1 0.0 1000 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz Cob [pF], CAPACITANCE 1000 100 IC = 10 IB IC[mA], COLLECTOR CURRENT 100 10 1 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE Rev 8: Nov 2014 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE 10 www.born-tw.com VCE = 10V 100 10 1 1 10 100 400 IC[mA], COLLECTOR CURRENT Page 2 of 2