SS14

SS12-110 SERIES SCHOTTKY SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS ROHS FEATURES  For surface mounted applications  Metal silicon junction,majority carrier conduction  Low power loss,high efficiency  Built-in strain relief,ideal for automated placement  High forward surge current capability  High temperature soldering guaranteed: 250℃/10 seconds at terminals  The plastic material carries U/L recognition 94V-O MECHANICAL DATA  Case: JEDEC DO -214AC. molded plastic  Terminals: Axial leads. Solderable per MIL - STD - 750 Method 2026  Polarity: Color band denotes cathode  Weight: 0.003 ounce. 0.093 grams  Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ℃ ambient temperature unless otherwise specified. Single phase half wave 60HZ. resistive or inductive load. For capacitive load current derate by 20％ SYMBOL SS12 SS13 SS14 SS15 SS16 SS18 SS110 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 80 100 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 V Maximum Average Forward Rectified Current 9.5mm Lead Length. TA = 75℃ I(AV) 1.0 A IFSM 40.0 A Peak Forward Surge Current 8.3ms Single half-sine-wave superimposed on rated Tj = 125℃ Maximum Forward Voltage at 1.0A DC Maximum Reverse Current TA = 25℃ at Rated DC Blocking Voltage TA = 100℃ VF Cj Typical Thermal Resistance ( Note 2 ) RQJA Operating Junction Temperature Range Tj 0.70 0.85 0.5 IR Typical Junction Capacitance ( Note 1 ) Storage Temperature Range 0.55 0.45 6.0 5.0 110 90 mA pF ℃/W 88.0 65 to 125 TSTG ℃ 65 to 150 ℃ 65 to 150 NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. P.C.B.mounted with 0.2×0.2 (5.0×5.0mm)copper pad areas Rev 8: Nov 2014 www.born-tw.com V Page 1 of 2 SS12-110 SERIES SCHOTTKY SMA Plastic-Encapsulate SURFACE MOUNT SCHOTTKY Schottky BARRIER BarrierRECTIFIERS Diode ROHS Forward Current: 1.0Ampere Reverse Voltage：20 to 100 Volts FIG.1-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.2-TYPICAL JUNCTION CHARACTERISTICS 1000 10 JUNCTION CAPACITANCE, p F pulse width=300μS TJ=25℃ SS12-SS14 1.0 AMPERES INSTANTANEOUS FORWARD CURRENT, 50 SS15-SS16 SS18-SS110 0.1 300 Tj = 25 ℃ f = 1.0 MHZ SS12-SS14 100 30.0 0.01 SS15-SS110 10.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.0 4.0 INTANTANEOUS FORWARD VOLEAGE, 10 100 REVERSE VOLTAGE, VOLTS VOLTS FIG.3-FORWARD CURRENT DERATING CURVE FIG.4-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 40 SS15-SS110 1.0 0.5 SS12-SS14 CURRENT, AMPERES PEAK FORWARD SURGE Single Phase Half Wave 60Hz Resistive or Inductive Load CURRENT,AMPERES AVERAGE FORWARD RECTIFIED 1.5 30 8.3mS SINGLE HALF SINE-WAVE 20 (JEDEC Method) 10 0 1.0 0 0 25 50 75 100 125 150 10 20 175 NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE, ℃ Rev 8: Nov 2014 2.0 www.born-tw.com Page 2 of 2 100