Applications
Note:SY7304
High Efficiency 33V,
4A, 1MHz Step Up Regulator
General Description
Features
The SY7304 is a high efficiency, current-mode control
Boost regulator. The device integrates a 120mΩ low
RDS(ON) N-channel MOSFET for high efficiency. The
fixed 1MHz switching frequency and internal
compensation reduce external components size and
count. The build-in internal soft start
circuitry
minimizes the inrush current at start-up.
The SY7304 is available in compact DFN3×3-10 package.
Ordering Information
SY7304□(□□)□
Ordering Number
SY7304DBC
Temperature Code
Package Code
Optional Spec Code
Package type
DFN3×3-10
Wide input range: 3-33V
Maximum output voltage: 33V
1MHz switching frequency
Integrated 120 mΩ RDS(ON) switch with 4A peak
current capability
Internal soft-start
0.6V±2% reference voltage
Cycle by cycle peak current limit
Over temperature protection
RoHS Compliant and Halogen Free
Compact package: DFN3×3-10
Applications
Note
4A
Portable Device
Battery Powered System
Networking cards powered from PCI or PCIexpress slots
Typical Applications
Figure 1. Schematic Diagram
AN_SY7304 Rev. 0.9
Figure 2. Efficiency vs. Load Current
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1
SY7304
Pinout (top view)
NC
1
FB
2
NC
3
LX
4
LX
5
10 NC
11 GND
9
EN
8
NC
7
IN
6
NC
(DFN3×3-10)
Top Mark: VIxyz (Device code: VI, x=year code, y=week code, z= lot number code)
Pin Name
IN
GND
LX
FB
Pin Number
7
11
4,5
2
EN
9
NC
1,3,6,8,10
Pin Description
Input pin. Decouple this pin to GND pin with 1uF ceramic cap.
Ground pin
Inductor node. Connect an inductor between IN pin and LX pin.
Feedback pin. Connect a resistor R1 between VOUT and FB, and a
resistor R2 between FB and GND to program the output voltage:
VOUT=0.6V*(R1/R2+1).
Enable control. High to turn on the part. Don’t leave it floated.
No connection.
Absolute Maximum Ratings (Note 1)
LX, IN, EN------------------------------------------------------------------------------------------------------------ - -0.3V to 36V
FB------------------------------------------------------------------------------------------------------------------------ - -0.3V to 4V
Power Dissipation, PD @ TA = 25°C DFN3×3-10---------------------------------------------------------------------- --2.6W
Package Thermal Resistance (Note 2)
θ JA--------------------------------------------------------------------------------------------------------------------------------------------------------------------- 38°C/W
θ JC---------------------------------------------------------------------------------------------------------------------------------------------------------------------- 8°C/W
Junction Temperature Range----------------------------------------------------------------------------------------- 40 to 150°C
Lead Temperature (Soldering, 10 sec.)------------------------------------------------------------------------------------ 260°C
Storage Temperature Range---------------------------------------------------------------------------------------65°C to 150°C
Dynamic LX voltage in 50ns duration--------------------------------------------------------------------- IN+3V to GND-4V
Recommended Operating Conditions (Note 3)
IN------------------------------------------------------------------------------------------------------------------------------- V to 33V
Junction Temperature Range---------------------------------------------------------------------------------------- 40°C to 125°C
Ambient Temperature Range------------------------------------------------------------------------------------------40°C to 85°C
AN_SY7304 Rev0.9
Silergy Corp. Confidential- Prepared for Internal Use Only
2
SY7304
Block Diagram
AN_SY7304 Rev0.9
Silergy Corp. Confidential- Prepared for Internal Use Only
3
SY7304
Electrical Characteristics
(VIN = 5V, VOUT =12V, IOUT =100mA, TA = 25°C unless otherwise specified)
Parameter
Input Voltage Range
Quiescent Current
Shutdown Current
Low Side Main FET
RON
Main FET Current
Limit
Switching Frequency
Feedback Reference
Voltage
FB Pin Input Current
IN UVLO Rising
Threshold
UVLO Hysteresis
EN Rising Threshold
EN Falling Threshold
Max Duty Cycle
Thermal Shutdown
Temperature
Thermal Recovery
Hysteresis
Symbol
VIN
IQ
ISHDN
RDS(ON)
Test Conditions
ILIM
Duty cycle=80%
VFB=0.66V
EN=0
Min
3
Typ
100
Max
33
15
120
Fsw
VREF
4
0.8
0.588
IFB
VIN,UVLO
UVLO,HYS
VENH
VENL
Dmax
TSD
THYS
1
0.6
-50
2
6
A
1.2
0.612
MHz
V
50
2.7
nA
V
0.4
V
V
V
%
°C
0.1
90
150
Unit
V
µA
µA
mΩ
15
°C
Note 1: Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device.
These are for stress ratings. Functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may remain possibility to affect device reliability.
Note 2: θ JA is measured in the natural convection at TA = 25°C on a low effective single layer thermal conductivity
test board of JEDEC 51-3 thermal measurement standard. Test condition: Device mounted on 2” x 2” FR-4 substrate
PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane.
Note 3: The device is not guaranteed to function outside its operating conditions.
AN_SY7304 Rev0.9
Silergy Corp. Confidential- Prepared for Internal Use Only
4
SY7304
Typical Performance Characteristics
Load Transient
Efficiency vs. Load Current
(V IN =5.0V, V OUT=12V, IO=0.12 ~ 1.2A)
100
95
∆V OUT
90
0.5V/div
85
80
75
IL
70
2A/div
V IN =3.3V,V OUT =12V
V IN =5.0V,V OUT =12V
V IN =9.0V,V OUT =12V
65
60
55
50
1
10
100
1000
Load Current (mA)
10000
Time (100µs/div)
Shutdown from VIN
(V IN =5.0V, V OUT=12V, IO=1.2A)
V IN
2V/div
V OUT
5V/div
V LX
10V/div
Io
1A/div
Time (800µs/div)
Shutdown from Enable
(V IN =5.0V, V OUT=12V, IO =1.2A)
EN
5V/div
V OUT
5V/div
V LX
10V/div
IO
1A/div
Time (200µs/div)
AN_SY7304 Rev0.9
Silergy Corp. Confidential- Prepared for Internal Use Only
5
SY7304
Output Ripple
Output Ripple
(V IN =5.0V, V OUT=12V, IO=1.2A)
(V IN =5.0V, V OUT =12V, IO=0.6A)
∆V OUT
100mV/div
V LX
10V/div
IL
∆V OUT
20mV/div
V LX
10V/div
IL
2A/div
2A/div
Time (1µs/div)
Time (1µs/div)
Output Ripple
(V IN =5.0V, V OUT=12V, IO=0.06A)
∆V OUT
10mV/div
V LX
10V/div
IL
0.5A/div
Time (1µs/div)
AN_SY7304 Rev0.9
Silergy Corp. Confidential- Prepared for Customer Use Only
6
SY7304
Applications Information
1)
Because of the high integration in SY7304, the
application circuit based on this regulator IC is rather
simple. Only input capacitor C ,INoutput capacitor C , OUT
inductor L and feedback resistors (R1 and R2) need to
be selected for the targeted applications.
Feedback resistor divider R1 and R2
Choose R1 and R2 to program the proper output voltage.
To minimize the power consumption under light load,
it is desirable to choose large resistance values for both
R1 and R2. A value between 10k and 1M
is
recommended for both resistors. If R1=200k is chosen,
then R2 can be calculated to be:
R 2
(VOUT VIN)
VIN
(H)
L
F
SW
I
OUT_MAX
40%
V
OUT
where FSW is the switching frequency and
the maximum load current.
VOUT
2
R1
R2
3)
Input capacitor CIN
The ripple current through input capacitor is calculated
as:
ICIN_RMS
The saturation current rating of an inductor must
be selected to guarantee an adequate margin to the
peak inductor current under full load conditions.
VOUT
VIN (VOUT VIN)
ISAT_MIN
IOUT_MAX
VIN
VOUT 2 FSW L
FB
GND
IOUT_MAX is
SY7304 regulator IC is less sensitive to the ripple
current variations. Consequently, the final choice of
inductance can be slightly off the calculation value
without significantly impacting the performance.
2)
0.6R1
()
VOUT 0.6
Choose the inductance to provide the desired
ripple current. It is suggested to choose the ripple
current to be about 40% of the maximum average
input current. 2The inductance is calculated as:
VIN (VOUT VIN)
2 3 L FSW VOUT
(A)
To minimize the potential noise problem, place a
typical X5R or better grade ceramic capacitor really
close to the IN and GND pins. Care should be taken to
minimize the loop area formed by CIN, and IN/GND pins.
A low ESR ceramic capacitor with greater than 10uF
capacitance is recommended.
Output capacitor COUT
The output capacitor is selected to handle the output
ripple noise requirements. Both steady state ripple and
transient requirements must be taken into account when
selecting this capacitor. For the best performance, it is
recommended to use X5R or better grade ceramic
capacitor with greater than 22uF capacitance.
Boost inductor L
There are several considerations in choosing this
inductor.
AN_SY7304 Rev0.9
The DCR of the inductor and the core loss at the
switching frequency must be low enough to
achieve the desired efficiency requirement. It is
desirable to choose an inductor with DCR