2SD596

2SD596 Silicon Epitaxial Planar Transistor FEATURES z Micro package. z Complementary to 2SB624 PNP Transistor. z High DC current gain hFE:200TYP.(VCE=1.0V,IC=100mA) APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SD596 Marking Package Code DV1/DV2/DV3/DV4/DV5 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 700 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ REV.08 1 of 4 2SD596 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE B MIN VCE=1V,IC=100mA 110 VCE=1V,IC=700mA 50 Collector-emitter saturation voltage VCE(sat) IC=700mA, IB=70mA Base to Emitter voltage VBE VCE=6V,IC=10mA 600 Transition frequency fT VCE=6V, IE= -10mA 170 Output capacitance Cob VCB=6V, IE=0,f=10kHz CLASSIFICATION Range Marking REV.08 OF B TYP MAX 200 400 0.22 0.6 V 640 700 V MHz 12 pF hFE(1) 110-180 135-220 170-270 200-320 250-400 DV1 DV2 DV3 DV4 DV5 2 of 4 UNIT 2SD596 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified REV.08 3 of 4 2SD596 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J C 1.0Typical K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm REV.08 4 of 4