2SC2873Y

2SC2873 NPN-Silicon General use Transistors 1W 、1.5A、25V 4C 1B Applications：Can be used for switching and amplifying in various 2C SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Collector-emitter voltage (IB=0) VCEO 25 Unit V Collector-base voltage（IE=0） VCBO 40 V Emitter-base voltage（IC=0） VEBO 6 V IC 1.5 A Ptot 1 W Junction temperature Tjm 150 ℃ Storage temperature Tstg -55～150 ℃ Collector current Total dissipation * power(TA=25℃) * Device is mounted on a printed circuit board. Electrical characteristics（Unless otherwise specified，TA=25℃） Parameters Symbol Test condition Min. typ Max. Unit Collector-emitter breakdown voltage V(BR)CEO IC=2mA，IB=0 25 — — V Collector-base breakdown voltage V(BR)CBO IC=100µA，IE=0 40 — — V Emitter-base breakdown voltage V(BR)EBO IE=100µA，IC=0 6 — — V Forward current transfer ratio O Collector-emitter saturation voltage Characteristic frequency — 140 — VCE=1V；IC=100mA Y Collector-base current REV.08 70 hFE 120 — 240 — VCB=35V，IE=0 — — 100 nA VCE（sat） IC=800mA，IB=80mA — — 0.5 V fT IC=50mA，VCE=10V， f=100MHz — 100 — MHz ICBO 1 of 3 3E 2SC2873 Typical characteristics REV.08 2 of 3 2SC2873 Outline dimensions Unit：mm Fig.7 REV.08 Outline Dimensions 3 of 3 Dimensions Symbol A b b1 b2 c D E e e1 HE L LE α min 1.4 0.35 0.4 SOT-89 type max 1.6 0.55 0.65 1.6 0.35 4.4 2.35 0.45 4.6 2.55 1.5 3 4.15 2.7 1.0 5o