1SS355

1SS355 Silicon Epitaxial Planar Switching Diode Features • Small plastic package suitable for surface mounted design • High reliability with high surge current handling capability Top View Marking Code: A Simplified outline SOD-323 and symbol Applications • High speed switching Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit Peak Reverse Voltage VRM 90 V Reverse Voltage VR 80 V IF(AV) 100 mA Peak Forward Current IFM 225 mA Surge Forward Current (1 s) IFSM 500 mA Tj 150 O Tstg - 55 to + 150 O Symbol Max. Unit Forward Voltage at IF = 100 mA VF 1.2 V Reverse Current at VR = 80 V IR 0.1 µA Capacitance between Terminals at VR = 0.5 V, f = 1 MHz CT 3 pF Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 100 Ω trr 4 ns Average Rectified Forward Current Junction Temperature Storage Temperature Range C C Electrical Characteristics (Ta = 25 C) O Parameter REV.08 1 of 3 1SS355 REV.08 2 of 3 1SS355 PACKAGE OUTLINE Plastic surface mounted package; 2 leads REV.08 3 of 3 SOD-323