ME9435

ME9435 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.8 0.055 at VGS = - 6 V - 5.0 0.060 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 4.1 - 4.6 - 3.2 - 30 - 2.3 A - 1.1 2.5 1.3 1.6 0.8 TJ, Tstg Operating Junction and Storage Temperature Range V - 5.8 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 95 24 30 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. E-mail：China@VBsemi TEL:86-755-83251052 1 ME9435 www.VBsemi.tw SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.7 Typ.a Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Gate Threshold Voltage Drain-Source On-State Resistanceb b Forward Transconductance Diode Forward Voltageb - 2.0 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 70 °C -5 RDS(on) VDS ≤ - 10 V, VGS = - 10 V - 20 VDS ≤ - 5 V, VGS = - 4.5 V -5 µA A VGS = - 10 V, ID = - 5.8 A 0.033 0.042 VGS = - 6 V, ID = - 5 A 0.043 0.055 0.060 VGS = - 4.5 V, ID = - 4.4 A 0.056 gfs VDS = - 15 V, ID = - 5.8 A 13 VSD IS = - 2.3 A, VGS = 0 V - 0.8 - 1.1 16 24 VDS = - 15 V, VGS = - 10 V, ID = - 3.5 A 2.3 Ω S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.5 Gate Resistance Rg 8.8 td(on) 14 25 14 25 Turn-On Delay Time Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω IF = - 1.2 A, dI/dt = 100 A/µs nC Ω 42 70 30 50 30 60 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 2 ME9435 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 V thru 6 V 5V 25 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 4V 10 20 15 10 TC = 125 °C 5 5 25 °C 3V - 55 °C 0 0 0 1 2 3 4 0 5 1 4 5 Transfer Characteristics Output Characteristics 1100 0.15 880 C - Capacitance (pF) 0.12 0.09 VGS = 4.5 V 0.06 VGS = 6 V Ciss 660 440 Coss 220 0.03 VGS = 10 V Crss 0 0.00 0 4 8 12 16 0 20 5 10 20 25 30 Capacitance On-Resistance vs. Drain Current 1.6 10 VGS = 10 V ID = 5.7 A VDS = 15 V ID = 3.5 A 1.4 R DS(on) - On-Resistance (Normalized) 8 6 4 1.2 1.0 0.8 2 0 0.0 15 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) 2 3.2 6.4 9.6 Qg - Total Gate Charge (nC) Gate Charge E-mail：China@VBsemi TEL:86-755-83251052 12.8 16.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 ME9435 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.20 50 1 0.0 TJ = 25 °C TJ = 150 °C 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.16 ID = 5.8 A 0.12 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 8 10 On-Resistance vs. Gate-to-Source Voltage 0.6 150 0.4 120 ID = 250 µA 0.2 90 Power (W) V GS(th) Variance (V) 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 0.0 60 - 0.2 - 0.4 - 50 4 30 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 10-1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 1 0.1 10 ms 100 ms 1s 10 s TC = 25 °C Single Pulse DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 4 ME9435 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 5 ME9435 www.VBsemi.tw SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 E-mail：China@VBsemi TEL:86-755-83251052 6 ME9435 www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index E-mail：China@VBsemi TEL:86-755-83251052 7 ME9435 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: ( 1) any application and all liability arising out of or use of any products; ( 2) any and all liability, including but not limited to special, consequential damages or incidental ; ( 3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be R oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 R i Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 8