ME9926

ME9926 www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V 7.1 0.035 at VGS = 2.5 V 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC SO-8 D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C ID V 7.1 5.7 IDM 40 IS 1.7 PD Unit 2 1.3 A W TJ, Tstg - 55 to 150 Symbol Limit Unit RthJA 62.5 °C/W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. E-mail：China@VBsemi TEL:86-755-83251052 1 ME9926 www.VBsemi.tw SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = 250 µA 0.6 IGSS Typ. Max. Unit 1.5 V VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS ≥ 5 V, VGS = 4.5 V 20 A VGS = 4.5 V, ID = 7.1 A 0.019 0.025 VGS = 2.5 V, ID = 6.0 A 0.026 0.035 gfs VDS = 10 V, ID = 7.1 A 27 VSD IS = 1.7 A, VGS = 0 V RDS(on) µA Ω S 1.2 V b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Rg 9.5 VDS = 10 V, VGS = 4.5 V, ID = 7.1 A td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 2.5 f = 1 MHz td(on) tr 1.5 1.6 2.7 Ω 10 VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 10 Ω 15 38 ns 25 IF = 1.7 A, dI/dt = 100 A/µs 26 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 2 ME9926 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 5 V thru 3 V 2.5 V 30 I D - Drain Current (A) I D - Drain Current (A) 30 20 2V 10 20 TC = 125 °C 10 25 °C 1 V, 1.5 V 0 0.0 0.5 1.0 1.5 2.0 3.0 2.5 3.5 - 55 °C 0 0.0 4.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.5 3.0 Transfer Characteristics 0.10 1000 0.08 800 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.06 0.04 VGS = 2.5 V 600 400 Coss 200 0.02 VGS = 4.5 V Crss 0 0.00 0 10 20 30 0 40 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 5 VGS = 4.5 V ID = 7.1 A VDS = 10 V ID = 7.1 A 1.4 3 2 (Normalized) 4 RDS (on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 1.2 1.0 0.8 1 0 0 2 4 6 8 10 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature E-mail：China@VBsemi TEL:86-755-83251052 150 3 ME9926 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 0.10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 7.1 A TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.08 0.06 0.04 0.02 0.00 1.4 0 VSD - Source-to-Drain Voltage (V) 0.4 30 0.2 24 ID = 250 µA 0.0 5 On-Resistance vs. Gate-to-Source Voltage Power (W) V GS(th) Variance (V) Source-Drain Diode Forward Voltage 1 2 3 4 VGS - Gate-to-Source Voltage (V) - 0.2 - 0.4 18 12 6 - 0.6 - 50 - 25 0 25 50 75 100 125 0 0.01 150 TJ - Temperature (°C) 0.10 1.00 Time (s) 10.00 Threshold Voltage Single Pulse Power 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 62.5 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient E-mail：China@VBsemi TEL:86-755-83251052 4 ME9926 www.VBsemi.tw SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS DIM Min INCHES Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 E-mail：China@VBsemi TEL:86-755-83251052 5 ME9926 www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index E-mail：China@VBsemi TEL:86-755-83251052 6 ME9926 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be R oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 R i Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 7