IRFU120NP

IRFU120NP www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 0.20 16 4.4 7.7 Single • Halogen-free According to IEC 61249-2-21 Definition • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling Available Available TO-251 D G Drain Connected to Drain-Tab G D S N-Channel MOSFET S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Currenta SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID Pulsed Drain IDM Linear Derating Factor Linear Derating Factor (PCB Mount) Single Pulse Avalanche Energyb EAS Avalanche Currenta IAR EAR Repetitive Avalanche Energya TC = 25 °C Maximum Power Dissipation PD TA = 25 °C Maximum Power Dissipation (PCB Mount) dV/dt Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) For 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 , IAS = 9.2 A (see fig. 12). c. ISD  9.2 A, dI/dt  110 A/μs, VDD  VDS, TJ  175 °C. E-mail：China@VBsemi TEL:86-755-83251052 LIMIT 100 ± 20 12 7.5 37 0.40 0.025 200 9.2 6.0 60 3.7 5.5 - 55 to + 175 300d UNIT V A W/°C mJ A mJ W V/ns °C IRFU120NP www.VBsemi.tw THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Maximum Junction-to-Ambient  (PCB Mount)a RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 2.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0, ID = 250 μA 100 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C VGS(th) VDS = VGS, ID = 250 μA 1.0 - 3.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 20 V - - ± 100 VDS = 100 V, VGS = 0 V - - 25 VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 - 0.20 -  2.7 - - S - 360 - ID = 5.5 Ab VGS = 10 V VDS = 50 V, ID = 5.5 Ab μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b - 150 - - 34 - - - 16 - - 4.4 Gate-Drain Charge Qgd - - 7.7 Turn-On Delay Time td(on) - 8.8 - Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance tr td(off) VDD = 50 V, ID = 9.2 A, Rg = 18 , RD = 5.2 , see fig. 10b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact - 30 - - 19 - - 20 - - 4.5 - - 7.5 - - - 9.2 - - 37 pF nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode A G TJ = 25 °C, IS = 9.2 A, VGS = 0 S Vb TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb - - 1.8 V - 110 260 ns - 0.53 1.3 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. E-mail：China@VBsemi TEL:86-755-83251052 D IRFU120NP www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 25 °C 101 4.5 V 100 ID, Drain Current (A) ID, Drain Current (A) 101 175 °C 100 20 µs Pulse Width TC = 25 °C 10-1 100 101 4 VDS, Drain-to-Source Voltage (V) 91018_01 20 µs Pulse Width VDS = 50 V 91018_03 101 4.5 V 100 20 µs Pulse Width TC = 175 °C 10-1 100 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 175 °C E-mail：China@VBsemi TEL:86-755-83251052 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) Fig. 1 - Typical Output Characteristics, TC = 25 °C VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 5 VGS, Gate-to-Source Voltage (V) 3.0 2.5 ID = 9.2 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature IRFU120NP www.VBsemi.tw VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 600 450 Ciss 300 Coss 150 Crss 101 175 °C ISD, Reverse Drain Current (A) 750 25 °C 100 0 100 VDS, Drain-to-Source Voltage (V) 91018_05 VDS = 20 V 8 4 8 12 16 5 1.2 10 µs 2 100 µs 10 5 1 ms 2 10 ms 1 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage TC = 25 °C TJ = 175 °C Single Pulse 2 0.1 0.1 20 QG, Total Gate Charge (nC) E-mail：China@VBsemi TEL:86-755-83251052 1.1 102 5 For test circuit see figure 13 4 1.0 2 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) VDS = 80 V VDS = 50 V 0 0.9 Operation in this area limited by RDS(on) 5 0 91018_06 0.8 VSD, Source-to-Drain Voltage (V) 103 16 0.7 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = 9.2 A 12 0.6 91018_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 VGS = 0 V 10-1 0.5 101 91018_08 2 5 1 2 5 10 2 5 102 2 5 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 103 IRFU120NP www.VBsemi.tw RD VDS VGS 10 8 ID, Drain Current (A) D.U.T. Rg + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 6 Fig. 10a - Switching Time Test Circuit 4 VDS 2 90 % 0 25 50 75 100 125 150 175 10 % VGS TC, Case Temperature (°C) 91018_09 td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 PDM 0.1 0.05 0.1 t1 0.02 0.01 Single Pulse (Thermal Response) 10-2 10-5 10-4 10-3 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 0.1 1 t1, Rectangular Pulse Duration (s) 91018_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case E-mail：China@VBsemi TEL:86-755-83251052 10 IRFU120NP www.VBsemi.tw L Vary tp to obtain required IAS VDS VDS tp D.U.T. Rg + - I AS VDD V DD VDS 10 V 0.01 Ω tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 600 ID 3.8 A 6.5 A Bottom 9.2 A Top 500 400 300 200 100 VDD = 25 V 0 25 91018_12c 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform E-mail：China@VBsemi TEL:86-755-83251052 Fig. 13b - Gate Charge Test Circuit IRFU120NP www.VBsemi.tw Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel E-mail：China@VBsemi TEL:86-755-83251052 VDD ISD IRFU120NP www.VBsemi.tw TOĆ251AA E A L2 b2 Dim A A1 b b1 b2 c c1 D E e L L1 L2 L3 D L3 L1 b1 L b MILLIMETERS c1 e c A1 Note: Dimension L3 is for reference only. E-mail：China@VBsemi TEL:86-755-83251052 INCHES Min Max Min Max 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.22 0.235 0.245 6.48 6.73 0.255 0.265 2.28 BSC 0.090 BSC 3.89 9.53 0.153 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 IRFU120NP www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: ( 1) any application and all liability arising out of or use of any products; ( 2) any and all liability, including but not limited to special, consequential damages or incidental ; ( 3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be R oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 R i Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052