FS10ASJ-06F

FS10ASJ-06F www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. ID (A) 0.073 at VGS = 10 V 18.2 0.085 at VGS = 4.5 V 13.2 Qg (Typ.) 19.8 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see TO-252 APPLICATIONS • DC/DC Converters D • DC/AC Inverters • Motor Drives G Drain Connected to Tab G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage Parameter VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current TC = 70 °C ID 13.6 IDM 25 Avalanche Current IAS 15 EAS 11.25 Single Avalanche L = 0.1 mH TC = 25 °C Maximum Power Dissipationa TA = 25 °Cc Operating Junction and Storage Temperature Range PD V 16.9 Pulsed Drain Current (t = 300 µs) Energya Unit 41.7b 2.1 A mJ W TJ, Tstg - 55 to 150 °C Symbol Limit Unit RthJA 60 RthJC 3 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Base on TC = 25 °C. E-mail：China@VBsemi TEL:86-755-83251052 °C/W FS10ASJ-06F www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS = 60 V, V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS GS = VDS = 60 V, V GS = 0 V, TJ = 150 °C gfs V nA 1 0 V, TJ = 125 °C VDS 10 V, VGS = 10 V RDS(on) ± 250 GS = 0 V VDS = 60 V, V ID(on) 3.0 50 µA 250 20 A VGS = 10 V, ID = 6.6 A 0.073 VGS = 4.5 V, ID = 6 A 0.083 VDS = 15 V, ID = 6.6 A 25  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Fall Timec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Drain-Source Body Diode Ratings and 19.8 VDS = 30 V, VGS = 10 V, ID = 6.6 A 30 3.6 nC 4.1 f = 1 MHz td(on) td(off) pF 40 Rg VDD = 30 V, RL = 9.6  ID  5.2 A, VGEN = 10 V, Rg = 1  0.4 2 4 8 16 11 20 18 27 tf 5 10 td(on) 38 57 58 87 18 27 8 16 tr Timec 85 Qgd tr Turn-Off Delay Timec 860 VDS = 30 V, VGS = 0 V, f = 1 MHz td(off) VDD = 30 V, RL = 9.6  ID  5.2 A, VGEN = 4.5 V, Rg = 1  tf Characteristicsb 16.9 Pulsed Current ISM 25 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 5.2 A, VGS = 0 V trr IRM(REC) Qrr ns TC = 25 °C IS Continuous Current  IF = 5.2 A, dI/dt = 100 A/µs A 0.8 1.5 V 34 51 ns 3 5 A 50 75 nC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 FS10ASJ-06F www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.10 25 VGS = 10 V thru 7 V 0.09 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 20 VGS = 4 V 15 10 5 0.08 VGS =4.5V 0.07 VGS = 10 V 0.06 VGS = 3 V 0 0 0.5 1 1.5 0.04 2 0 5 10 VDS - Drain-to-Source Voltage (V) 15 20 25 ID - Drain Current (A) On-Resistance vs. Drain Current Output Characteristics 5 0.15 ID = 6.6 A 3 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 4 TC = 25 °C 2 1 0.12 TJ = 125 °C 0.09 TJ = 25 °C 0.06 TC = 125 °C TC = - 55 °C 0 0 1 2 3 0.03 2 4 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 6 8 10 On-Resistance vs. Gate-to-Source Voltage 10 40 ID = 6.6 A TC = - 55 °C TC = 25 °C 30 VGS - Gate-to-Source Voltage (V) gfs - Transconductance (S) 4 VGS - Gate-to-Source Voltage (V) TC = 125 °C 20 10 0 0 3 6 ID - Drain Current (A) Transconductance E-mail：China@VBsemi TEL:86-755-83251052 9 12 VDS = 30 V 8 VDS = 15 V 6 VDS = 40 V 4 2 0 0 6 12 18 Qg - Total Gate Charge (nC) Gate Charge 24 FS10ASJ-06F www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 2.7 ID = 250 μA 2.4 10 VGS(th) (V) IS - Source Current (A) TJ = 150 °C 2.1 1.8 TJ = 25 °C 1 1.5 0.1 1.2 0.0 0.2 0.4 0.6 1.0 0.8 1.2 - 50 - 25 0 25 VSD - Source-to-Drain Voltage (V) 50 75 100 125 150 125 150 TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 127 1250 VDS (V) Drain-to-Source Voltage ID = 250 μA C - Capacitance (pF) 1000 Ciss 750 500 250 122 117 112 107 Coss 0 Crss 102 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) - 50 100 0 25 50 75 100 TJ - Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 20 2.25 VGS = 10 V, ID = 6.6 A 15 1.8 VGS = 4.5 V, ID = 6 A 1.35 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) - 25 10 5 0.9 0 0.45 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature E-mail：China@VBsemi TEL:86-755-83251052 150 0 25 50 75 100 TC - Case Temperature (°C) Current Derating 125 150 FS10ASJ-06F www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* 10 ID - Drain Current (A) TJ = 25 °C IDAV (A) 10 100 μs 1 ms 1 10 ms DC, 10 s 1 s, 100 ms 0.1 TJ = 150 °C TC = 25 °C Single Pulse 1 BVDSS Limited 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 Time (s) Single Pulse Avalanche Current Capability vs. Time 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 Normalized Thermal Transient Impedance, Junction-to-Case E-mail：China@VBsemi TEL:86-755-83251052 10 30 FS10ASJ-06F www.VBsemi.tw TO-252AA Case Outline E C2 L3 H D b2 D1 e1 E1 L gage plane height (0.5 mm) e L5 L4 b C A1 DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. E-mail：China@VBsemi TEL:86-755-83251052 INCHES MILLIMETERS A b3 FS10ASJ-06F www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 E-mail：China@VBsemi TEL:86-755-83251052 0.087 (2.202) 0.090 (2.286) 0.420 (10.668) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index (6.180) (5.690) FS10ASJ-06F www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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