FDC5661N

FDC5661N www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET • 100 % Rg and UIS tested 60 RDS(on) () at VGS = 10 V 0.030 RDS(on) () at VGS = 4.5 V 0.035 ID (A) 7 Configuration Single TSOP-6 D 1 6 D D 2 5 D G 3 4 S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 PARAMETER Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 4 6 IDM 29 IAS 10 EAS 5 TJ, Tstg V 7 IS PD UNIT 5 1.6 A mJ W - 55 to +175 °C SYMBOL LIMIT UNIT RthJA 110 RthJF 30 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). E-mail：China@VBsemi TEL:86-755-83251052 1 FDC5661N www.VBsemi.tw SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.5 VDS = 0 V, VGS = ± 12 V - - ± 500 nA VDS = 0 V, VGS = ± 20 V - - ±1 mA 1 IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V VDS = 60 V - - VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150 VGS = 10 V VDS5 V 10 - - VGS = 10 V ID = 5 A - 0.030 - VGS = 10 V ID = 5 A, TJ = 125 °C - 0.050 - VGS = 10 V ID = 5 A, TJ = 175 °C - 0.070 - VGS = 4.5 V ID = 4 A - 0.035 - - 12 - - 560 700 - 85 105 VDS = 15 V, ID = 4 A V μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 55 70 Total Gate Charge c Qg - 7.6 12 - 2.1 - - 4.1 - f = 1 MHz 1.2 2.4 3.6 - 9 14 VDD = 30 V, RL = 7.5  ID  4 A, VGEN = 10 V, Rg = 1  - 12 18 - 19 29 tf - 7 11 Pulsed Current a ISM - - 29 A Forward Voltage VSD - 0.75 1.2 V Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c VDS = 30 V, f = 1 MHz VGS = 4.5 V VDS = 30 V, ID = 4 A td(on) Rise Time c Turn-Off Delay Time c VGS = 0 V tr td(off) Fall Time c pF nC  ns Source-Drain Diode Ratings and Characteristics b IF = 1.6 A, VGS = 0 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  E-mail：China@VBsemi TEL:86-755-83251052 2 FDC5661N www.VBsemi.tw TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 15 15 VGS = 10 V thru 5 V 12 I D - Drain Current (A) I D - Drain Current (A) 12 VGS = 4 V 9 6 9 6 TC = 25 °C 3 3 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 0 5 1 2 3 4 VDS - Drain-to-Source Voltage (V) 1 3 4 5 Transfer Characteristics Output Characteristics 25 0.15 20 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 2 VGS - Gate-to-Source Voltage (V) TC = - 55 °C 15 TC = 25 °C 10 TC = 125 °C 5 0 0.12 0.09 VGS = 4.5 V 0.06 0.03 VGS = 10 V 0.00 0 2 4 6 I D - Drain Current (A) 10 8 0 Transconductance 3 6 9 ID - Drain Current (A) 12 15 On-Resistance vs. Drain Current 10 1000 VGS - Gate-to-Source Voltage (V) VDS = 30 V ID = 4 A C - Capacitance (pF) 800 Ciss 600 400 Coss 200 8 6 4 2 Crss 0 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance E-mail：China@VBsemi TEL:86-755-83251052 50 60 0 4 8 12 16 20 Qg - Total Gate Charge (nC) Gate Charge 3 FDC5661N www.VBsemi.tw TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10-2 100 10 I S - Source Current (A) I GSS - Gate Current (A) 10-4 TJ = 150 °C 10-6 TJ = 25 °C 10-8 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 10-10 0 6 12 18 24 0.001 0.0 30 0.2 Gate Current vs. Gate-Source Voltage 0.8 0.6 1.0 1.2 Source-Drain Diode Forward Voltage 0.6 2.1 ID = 3.2 A 0.3 1.8 VGS = 10 V VGS(th) Variance (V) R DS(on) - On-Resistance (Normalized) 0.4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 1.5 1.2 0.0 - 0.3 ID = 5 mA - 0.6 ID = 250 µA 0.9 - 0.9 0.6 - 50 - 25 0 50 25 75 100 125 150 175 - 1.2 - 50 - 25 0 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 50 75 100 25 TJ - Temperature (°C) 125 150 175 125 150 175 Threshold Voltage 80 0.20 VDS - Drain-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) ID = 1 mA 0.16 0.12 TJ = 150 °C 0.08 0.04 TJ = 25 °C 0.00 0 1 2 3 4 5 6 7 8 9 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage E-mail：China@VBsemi TEL:86-755-83251052 10 76 72 68 64 60 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) Drain-Source Breakdown vs. Junction Temperature 4 FDC5661N www.VBsemi.tw THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited ID - Drain Current (A) 10 100 μs Limited by RDS(on)* 1 ms 1 10 ms 100 ms 1 s, 10 s, DC 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized thermal Transient Impedance, Junction-to-Ambient E-mail：China@VBsemi TEL:86-755-83251052 5 FDC5661N www.VBsemi.tw THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.                    E-mail：China@VBsemi TEL:86-755-83251052 6 FDC5661N www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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