CMU12N10

CMU12N10 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () ID (A) 0.115 at VGS = 10 V 15 0.120 at VGS = 6 V 15 • DT-Trench Power MOSFET • 175 °C Junction Temperature • 100 % Rg Tested APPLICATIONS • Primary Side Switch TO-251 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage Parameter VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C 8.7 45 Continuous Source Current (Diode Conduction) IS 15 Avalanche Current IAR 15 EAR 11.3 Repetitive Avalanche Energy (Duty Cycle  1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C 61 PD A mJ b W 2.7a TJ, Tstg Operating Junction and Storage Temperature Range V 15 ID IDM Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case Symbol t  10 s Steady State RthJA RthJC Typical Maximum 16 20 45 55 2 2.4 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. E-mail：China@VBsemi TEL:86-755-83251052 1 CMU12N10 www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) 3.0 VDS = 100 V, VGS = 0 V, TJ = 175 °C Drain-Source On-State Resistanceb Forward Transconductanceb VDS =5 V, VGS = 10 V RDS(on) gfs V nA µA 250 15 A VGS = 10 V, ID = 15 A 0.110 VGS = 10 V, ID = 15 A, TJ = 125 °C 0.170 VGS = 10 V, ID = 15 A, TJ = 175 °C 0.230 VGS = 6 V, ID = 10 A 0.115 VDS = 15 V, ID = 15 A 25  S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c 110 20 VDS = 75 V, VGS = 10 V, ID = 15 A Rise Timec Fall Timec 1 td(on) tr c td(off) 25 5.5 nC 7 Rg Gate Resistance Turn-On Delay Timec pF 70 Qgd Gate-Drain Charge Turn-Off Delay Time 892 VGS = 0 V, VDS = 25 V, f = 1 MHz VDD = 75 V, RL = 5  ID  15 A, VGEN = 10 V, RG = 2.5  tf 3.2 8 12 35 55 17 25 30 45  ns Source-Drain Diode Ratings and Characteristic (TC = 25 °C) 45 ISM Pulsed Current A Voltageb VSD IF = 15 A, VGS = 0 V 0.9 1.5 V Source-Drain Reverse Recovery Time trr IF = 15 A, dI/dt = 100 A/µs 55 85 ns Diode Forward Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 2 CMU12N10 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C unless noted) 25 25 VGS = 10 thru 5V 20 I D - Drain Current (A) I D - Drain Current (A) 20 15 4V 10 5 15 10 TC = 125 °C 5 25 °C 3V - 55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.14 40 TC = - 55 °C VGS = 6 V 25 °C 24 RDS(on)- On-Resistance () g fs - Transconductance (S) 0.12 32 125 °C 16 8 0.10 VGS = 10 V 0.08 0.06 0.04 0.02 0.00 0 0 5 10 15 20 0 25 5 10 ID - Drain Current (A) 20 25 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 1500 V GS - Gate-to-Source Voltage (V) 20 1200 C - Capacitance (pF) 15 Ciss 900 600 300 Crss Coss 0 VDS = 75 V ID = 15 A 16 12 8 4 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance E-mail：China@VBsemi TEL:86-755-83251052 100 0 8 16 24 32 40 Qg - Total Gate Charge (nC) Gate Charge 3 CMU12N10 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C unless noted) 100 VGS = 10 V ID = 15 A 2.4 2.0 I S - Source Current (A) R DS(on)- On-Resistance (Normalized) 2.8 1.6 1.2 0.8 TJ = 150 °C 10 TJ = 25 °C 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 1 175 0.3 0 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 100 20 I D - Drain Current (A) I D - Drain Current (A) 10 µs Limited by R DS(on)* 15 10 5 100 µs 10 1 ms 1 TC = 25 °C Single Pulse 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 0.1 0.1 Maximum Avalanche Drain Current vs. Case Temperature 10 ms 100 ms 1 s, DC 1 10 1000 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case E-mail：China@VBsemi TEL:86-755-83251052 4 CMU12N10 www.VBsemi.tw TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. E-mail：China@VBsemi TEL:86-755-83251052 5 CMU12N10 www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail：China@VBsemi TEL:86-755-83251052 6 CMU12N10 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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