CES2307

CES2307 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Typ. ID (A)a 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V -5 0.054 at VGS = - 4.5 V -4.5 Qg (Typ.) 11.4 nC • For Mobile Computing G 1 3 S - Load Switch - Notebook Adaptor Switch - DC/DC Converter S TO-236 (SOT-23) G APPLICATIONS D 2 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 TC = 70 °C - 5.1 ID TA = 25 °C - 5.4b,c - 4.3b,c TA = 70 °C Pulsed Drain Current (t = 100 µs) Continous Source-Drain Diode Current Maximum Power Dissipation IDM TC = 25 °C - 2.1 - 1b,c TC = 25 °C 2.5 TC = 70 °C 1.6 PD TA = 25 °C A - 18 IS TA = 25 °C W 1.25b,c 0.8b,c TA = 70 °C Operating Junction and Storage Temperature Range V - 5.6 TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg °C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter b,d Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t5s RthJA 75 100 Steady State RthJF 40 50 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. E-mail：China@VBsemi TEL:86-755-83251052 1 CES2307 www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V - 19 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 2.0 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS - 5 V, VGS = - 10 V 4 - 0.5 µA A - 2.5 VGS =- 10 V, ID = - 4.4 A 0.046 0.055 VGS =- 6 V, ID = - 4 A 0.049 0.058 VGS =- 4.5 V, ID = - 3.6 A 0.054 0.0 63 VDS = - 15 V, ID = - 3.4 A 18  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1295 VDS = - 15 V, VGS = 0 V, f = 1 MHz pF 130 VDS = - 15 V, VGS = - 10 V, ID = - 5.4 A 24 36 11.4 17 3.4 VDS = - 15 V, VGS = - 4.5 V, ID = - 5.4 A VDD = - 15 V, RL = 3.5  ID  - 4.3 A, VGEN = - 10 V, Rg = 1  1.5 7.7 15.4 13 20 4 8 38 57 tf 6 12 td(on) 28 42 td(off) tr td(off) nC 3.8 f = 1 MHz td(on) tr 150 VDD = - 15 V, RL = 3.5  ID  - 4.3 A, VGEN = - 4.5 V, Rg = 1  tf 16 24 30 45 10 20  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 µs) ISM Body Diode Voltage VSD TC = 25 °C - 2.1 - 80 IS = - 4.3 A, VGS 0 V - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 15 23 ns Body Diode Reverse Recovery Charge Qrr 7 14 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 8 7 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 2 CES2307 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 50 VGS = 10 V thru 5 V 40 ID - Drain Current (A) ID - Drain Current (A) 1.5 VGS = 4.5 V 30 VGS = 4 V 20 1 TC = 25 °C 0.5 10 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0.5 1 1.5 0 2 0 0.6 VDS - Drain-to-Source Voltage (V) Output Characteristics 1.8 2.4 3 Transfer Characteristics 1800 0.08 0.06 VGS = 4.5 V 1350 VGS = 6 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.2 VGS - Gate-to-Source Voltage (V) VGS = 10 V 0.04 Ciss 900 450 0.02 Coss Crss 0 0 0 10 20 30 40 0 50 12 18 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.5 10 ID = 5.4 A ID = 5.4 A VDS = 8 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 6 ID - Drain Current (A) 8 VDS = 15 V 6 4 VDS = 24 V 2 0 0 5 10 15 20 25 VGS = 10 V, 6 V 1.3 VGS = 4.5 V 1.1 0.9 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge E-mail：China@VBsemi TEL:86-755-83251052 On-Resistance vs. Junction Temperature 3 CES2307 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.080 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 5.4 A 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.060 TJ = 125 °C 0.040 TJ = 25 °C 0.020 0.000 0.0 0.3 0.6 0.9 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 2 ID = 250 μA 8 Power (W) VGS(th) (V) 1.75 1.5 6 4 1.25 2 1 - 50 - 25 0 25 50 75 100 125 150 TA = 25 °C 0 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 10 5 Limited by RDS(on)* ID - Drain Current (A) 100 μs 1 ms 1 10 ms 100 ms 0.1 10s, 1 s DC 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient E-mail：China@VBsemi TEL:86-755-83251052 4 CES2307 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5.8 ID - Drain Current (A) 4.6 3.4 2.2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 1.0 3.1 2.48 1.86 Power (W) Power (W) 0.8 1.24 0.5 0.3 0.62 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Foot 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 5 CES2307 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 6 CES2307 www.VBsemi.tw SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 E-mail：China@VBsemi TEL:86-755-83251052 7 CES2307 www.VBsemi.tw 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail：China@VBsemi TEL:86-755-83251052 8 CES2307 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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