BSS138

BSS138 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 2.8 at VGS = 10 V 60 250 SOT-23 G 1 3 • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC D BENEFITS S 2 Top View D • • • • • Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. • Battery Operated Systems • Solid-State Relays G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C TA = 100 °C Pulsed Drain Currenta Power Dissipationb ID IDM TA = 25 °C TA = 100 °C Maximum Junction-to-Ambientb Operating Junction and Storage Temperature Range PD Unit V 250 150 mA 800 0.30 0.13 W RthJA 350 °C/W TJ, Tstg - 55 to 150 °C Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board. * Pb containing terminations are not RoHS compliant, exemptions may apply. E-mail：China@VBsemi TEL:86-755-83251052 1 BSS138 www.VBsemi.tw SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 10 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1 Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage RDS(on) 2.5 VDS = 0 V, VGS = ± 20 V ± 10 VDS = 0 V, VGS = ± 15 V 1 VDS = 0 V, VGS = ± 10 V ± 150 VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 1000 VDS = 0 V, VGS = ± 5 V ± 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V , TJ = 125 °C 500 VGS = 10 V, VDS = 7.5 V 500 VGS = 4.5 V, VDS = 10 V 300 2.8 3.3 VGS = 4.5 V, ID = 150 mA 3.1 3.8 VDS = 10 V, ID = 100 mA VSD IS = 100 mA, VGS = 0 V Qg VDS = 10 V, VGS = 4.5 V ID ≅ 150 mA µA nA µA mA VGS = 10 V, ID = 200 mA gfs V 100 Ω mS 1.3 V 0.6 nC Dynamica Total Gate Charge Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 0.4 25 VDS = 25 V, VGS = 0 V f = 1 MHz 5 pF 2.0 Switchinga, b, c Turn-On Time td(on) Turn-Off Time td(off) VDD = 30 V, RL = 150 Ω ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω 20 30 ns Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 2 BSS138 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 TJ = - 55 °C 0.8 5V I D - Drain Current (mA) I D - Drain Current (A) 1200 7V 6V VGS = 10 V 0.6 4V 0.4 900 25 °C 125 °C 600 300 0.2 3V 0.0 0 0 1 2 3 4 5 0 1 2 3 Output Characteristics Transfer Characteristics 6 40 VGS = 0 V 5.5 32 5.0 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 5 VGS - Gate-to-Source Voltage (V) 6.0 4.5 VGS = 4.5 V 3.0 2.5 VGS = 10 V 24 Ciss 16 Coss 2.0 8 Crss 1.5 0 1.0 0 200 400 600 800 0 1000 10 ID - Drain Current (mA) 20 40 50 Capacitance 7 2.0 VGS = 10 V at 500 mA VDS = 10 V ID = 250 mA 5 4 3 2 (Normalized) 1.6 R DS(on) - On-Resistance 6 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 4 VDS - Drain-to-Source Voltage (V) 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature E-mail：China@VBsemi TEL:86-755-83251052 150 3 BSS138 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 1000 R DS(on) - On-Resistance (Ω) I S - Source Current (A) VGS = 0 V 100 TJ = 125 °C 10 TJ = 25 °C 4 3 ID = 200 mA ID = 500 mA 2 1 TJ = - 55 °C 0 1 0.0 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 0.4 3 2.5 0.2 2 0.0 Power (W) VGS(th) Variance (V) ID = 250 µA - 0.2 - 0.4 1.5 1 - 0.6 TA = 25 °C 0.5 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 10 1 TJ - Junction Temperature (°C) 100 600 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage Variance Over Temperature Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 350 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient E-mail：China@VBsemi TEL:86-755-83251052 4 BSS138 www.VBsemi.tw THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C ) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. E-mail：China@VBsemi TEL:86-755-83251052 5 BSS138 www.VBsemi.tw SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 E-mail：China@VBsemi TEL:86-755-83251052 6 BSS138 www.VBsemi.tw 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail：China@VBsemi TEL:86-755-83251052 7 BSS138 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 8