AP2310N

AP2310N www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.085 at VGS = 10 V 4.0 0.096 at VGS = 4.5 V 3.8 VDS (V) 60 Qg (Typ.) 2.1 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter D TO-236 (SOT23) G 1 3 S G D 2 S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Limit 60 ± 20 4.0 3.4 ID 3.1b, c 2.5b, c 12 1.39 0.91b, c 6 1.8 1.66 1.06 1.09b, c 0.7b, c - 55 to 150 IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter ≤5s Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 120 °C/W. E-mail：China@VBsemi TEL:86-755-83251052 Symbol RthJA RthJF Typical 90 60 Maximum 115 75 Unit °C/W 1 AP2310N www.VBsemi.tw MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 55 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V -5 1 8 µA A VGS = 10 V, ID = 1.9 A 0.075 0.085 VGS = 4.5 V, ID = 1.7 A 0.086 0.096 VDS = 15V, ID = 1.9 A 5 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 180 tr Rise Time td(off) Turn-Off Delay Time VDS = 30 V, VGS = 4.5 V, ID = 1.9 A f = 1 MHz VDD = 30 V, RL = 20 Ω ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 30 V, RL = 20 Ω ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω tf Fall Time 4.2 6.1 2.1 3.2 0.7 nC 1 tf Fall Time pF 13 VDS = 30 V, VGS = 10 V, ID = 1.9 A td(on) Turn-On Delay Time 22 VDS = 30 V, VGS = 0 V, f = 1 MHz 0.6 2.2 5.1 4 6 10 15 10 15 7 10.5 15 23 16 24 11 17 11 17 Ω ns ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 2.19 7 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IS = 1.5 A IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 15 23 ns 10 15 nC 12 3 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 2 AP2310N www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 4 VGS = 10 thru 5 V VGS = 4 V I D - Drain Current (A) I D - Drain Current (A) 4 2 1 3 TC = - 55 °C 2 TC = 125 °C 1 VGS = 3 V TC = 25 °C VGS = 2 V 0 0 1 2 3 4 0 0.0 5 0.7 2.1 2.8 3.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 300 240 0.16 VGS = 4.5 V 0.12 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.4 VGS = 10 V 180 120 0.08 60 Coss 0.04 Crss 0 0 2 4 6 8 10 0 10 20 30 40 50 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 60 2.0 8 VGS = 1 0 V, I D = 2 . 5 A 6 VDS = 48 V 4 2 (Normalized) 1.7 VDS = 30 V R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 2 . 5 A 1.4 VGS = 4.5 V, ID = 1.7 A 1.1 0.8 0 0 1 2 3 4 5 0.5 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature E-mail：China@VBsemi TEL:86-755-83251052 150 3 AP2310N www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.35 10 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2 . 5 A TJ = 25 °C 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0.25 TJ = 125 °C 0.20 0.15 TJ = 25 °C 0.10 3 1.2 4 5 VSD - Source-to-Drain Voltage (V) 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 2.4 10 8 2.1 Power (W) VGS(th) (V) ID = 250 µA 1.8 TA = 25 °C Single Pulse 6 4 1.5 2 1.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 600 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power 5 Limited by R DS(on)* I D - Drain Current (A) 100 µs 1 1 ms 10 ms 0.1 100 ms TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 1 s, 10 s DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area E-mail：China@VBsemi TEL:86-755-83251052 4 AP2310N www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 I D - Drain Current (A) 4 30 2 1 0.0 25 0 50 75 100 150 125 TC - Case Temperature (°C) Current Derating* 2.0 1.2 1.6 Power (W) Power (W) 0.9 1.2 0.8 0.6 0.3 0.4 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Case 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 5 AP2310N www.VBsemi.tw THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 6 AP2310N www.VBsemi.tw SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 E-mail：China@VBsemi TEL:86-755-83251052 7 AP2310N www.VBsemi.tw 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail：China@VBsemi TEL:86-755-83251052 8 AP2310N www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 9