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AO7600

AO7600

  • 厂商:

    VBSEMI(微碧)

  • 封装:

    SOT-323-3

  • 描述:

    MOS管 N+P Channel VDS=20V VGS=±20V ID=3.03A,2.58A SC70

  • 数据手册
  • 价格&库存
AO7600 数据手册
AO7600 www.VBsemi.tw N- and P- Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = 4.5 V 3.28 0.110 at VGS = 2.5 V 2.13 0.130 at VGS = 1.8 V 1.50 0.155 at VGS = - 4.5 V - 2.80 0.190 at VGS = - 2.5 V - 1.81 0.220 at VGS = - 1.8 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Thermally Enhanced SC-70 Package • Fast Switching • Compliant to RoHS Directive 2002/95/EC APPLICATIONS - 1.15 • Load Switch for Portable Devices D1 SOT-363 SC-70 (6-LEADS) S1 1 6 S2 D1 G2 G1 2 5 G2 D2 3 4 S2 G1 Top View S1 D2 N-Channel P-Channel ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Symbol 5s P-Channel Steady State 5s Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Current IS TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range PD V 3.28 3.03 - 2.80 - 2.58 2.12 1.81 - 1.72 - 1.53 9.5 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID - 8.5 2.61 2.48 - 1.61 -1.48 1.24 1.17 1.10 0.97 0.88 0.75 0.66 0.5 TJ, Tstg Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 130 170 170 220 80 100 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. E-mail:China@VBsemi TEL:86-755-83251052 1 AO7600 www.VBsemi.tw SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 100 µA N-Ch 0.45 1 VDS = VGS, ID = - 100 µA P-Ch - 0.45 1 N-Ch ± 100 P-Ch ± 100 N-Ch 1 VDS = - 16 V, VGS = 0 V P-Ch -1 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 5 IGSS VDS = 0 V, VGS = ± 8 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS P-Ch VDS ≥ 5 V, VGS = 4.5 V N-Ch 2 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch -2 RDS(on) gfs VSD nA µA -5 VDS = - 16 V, VGS = 0 V, TJ = 85 °C ID(on) V A VGS = 4.5 V, ID = 2.55 A N-Ch 0.090 VGS = - 4.5 V, ID = - 1.85 A P-Ch 0.155 VGS = 2.5 V, ID = 1.55 A N-Ch 0.110 VGS = - 2.5 V, ID = - 1.35 A P-Ch 0.19+0 VGS = 1.8 V, ID = 0.50 A N-Ch 0.130 VGS = - 1.8 V, ID = - 0.50 A P-Ch 0.220 VDS = 10 V, ID = 1.13 A N-Ch 2.6 VDS = - 10 V, ID = - 0.88 A P-Ch 1.5 IS = 0.48 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 0.48 A, VGS = 0 V P-Ch - 0.8 - 1.2 N-Ch 1.25 2 1.8 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Reverse Recovery Time trr N-Channel VDS = 10 V, VGS = 4.5 V, ID = 2.55 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 0.88 A N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 20 Ω ID ≅ - 0.5 A, VGEN = - 4.5 V, Rg = 6 Ω IF = 0.48 A, dI/dt = 100 A/µs P-Ch 1.2 N-Ch 0.21 P-Ch 0.3 N-Ch 0.3 P-Ch 0.21 nC N-Ch 15 25 P-Ch 18 30 N-Ch 22 35 P-Ch 25 40 N-Ch 25 40 P-Ch 15 25 N-Ch 12 20 P-Ch 12 20 N-Ch 30 60 P-Ch 30 60 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail:China@VBsemi TEL:86-755-83251052 2 AO7600 www.VBsemi.tw N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 VGS = 5 V thru3 V TC = - 55 °C I D - Drain Current (A) I D - Drain Current (A) 25 °C 7.5 1.5 V 5.0 2.5 7.5 125 °C 5.0 2.5 1V 0.0 0 1 2 3 0.0 0.0 4 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.6 160 120 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.5 0.4 0.3 VGS = 1.8 V 0.2 VGS = 2.5 V Ciss 80 40 Coss 0.1 VGS = 4.5 V 0.0 0.0 Crss 0 0.5 1.0 1.5 2.0 0 4 ID - Drain Current (A) 8 Capacitance 5 1.6 VDS = 10 V ID = 1.28 A VGS = 4.5 V ID = 1.13 A 4 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 20 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 3 2 1 0 0.0 12 1.2 1.0 0.8 0.3 0.6 0.9 Qg - Total Gate Charge (nC) Gate Charge E-mail:China@VBsemi TEL:86-755-83251052 1.2 1.5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 AO7600 www.VBsemi.tw N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 2 TJ = 150 °C R DS(on) - On-Resistance (Ω) 0.5 I S - Source Current (A) 1 TJ = 25 °C 0.4 ID = 1.13 A 0.3 0.2 0.1 0.0 0.1 0 0.4 0.2 0.6 0.8 1.0 0 1.2 1 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.2 5 ID = 100 µA 0.1 4 0.0 3 Power (W) VGS(th) Variance (V) 2 - 0.1 2 - 0.2 1 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 IDM Limited P(t) = 0.0001 I D - Drain Current (A) Limited by RDS(on)* 1 P(t) = 0.001 ID(on) Limited P(t) = 0.01 0.1 P(t) = 0.1 TA = 25 °C Single Pulse P(t) = 1 P(t) = 10, DC BVDSS Limited 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient E-mail:China@VBsemi TEL:86-755-83251052 4 AO7600 www.VBsemi.tw N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 170 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot E-mail:China@VBsemi TEL:86-755-83251052 5 AO7600 www.VBsemi.tw P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 3.0 TC = - 55 °C 2.5 I D - Drain Current (A) I D - Drain Current (A) 2.5 3V VGS = 5 V thru 3.5 V 2.5 V 2.0 1.5 2V 1.0 1.5 V 0.5 25 °C 2.0 125 °C 1.5 1.0 0.5 1V 0.0 0.0 0.0 0 1 2 3 4 0.5 1.0 1.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 160 0.64 VGS = 1.8 V Ciss 120 0.48 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.5 2.0 VGS = 2.5 V 0.32 VGS = 4.5 V 80 Coss 40 0.16 Crss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 6 8 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 12 1.6 VDS = 10 V ID = 0.9 A VGS = 4.5 V ID = 0.88 A 1.4 3 2 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4 On-Resistance vs. Drain Current 5 1.2 1.0 0.8 1 0 0.0 2 0.3 0.6 0.9 1.2 1.5 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature E-mail:China@VBsemi TEL:86-755-83251052 150 6 AO7600 www.VBsemi.tw P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 2 I S - Source Current (A) ID = 0.88 A R DS(on) - On-Resistance (Ω) TJ = 150 °C 1 TJ = 25 °C 1.2 0.8 0.4 0.0 0.1 0 0.4 0.2 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.30 5 0.25 ID = 100 µA 4 0.15 3 Power (W) V GS(th) Variance (V) 0.20 0.10 0.05 2 0.00 - 0.05 1 - 0.10 - 0.15 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 600 10 IDM Limited I D - Drain Current (A) P(t) = 0.0001 Limited by RDS(on)* 1 P(t) = 0.001 ID(on) Limited P(t) = 0.01 0.1 P(t) = 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 P(t) = 1 P(t) = 10 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient E-mail:China@VBsemi TEL:86-755-83251052 7 AO7600 www.VBsemi.tw P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 170 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 t1 t2 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot E-mail:China@VBsemi TEL:86-755-83251052 8 AO7600 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: ( 1) any application and all liability arising out of or use of any products; ( 2) any and all liability, including but not limited to special, consequential damages or incidental ; ( 3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be R oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 R i Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail:China@VBsemi TEL:86-755-83251052 9
AO7600 价格&库存

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AO7600
  •  国内价格
  • 1+1.08480
  • 10+1.01700
  • 50+0.91530
  • 150+0.84750
  • 300+0.80004
  • 500+0.77970

库存:0