AO5404E

AO5404E www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. ID (A) c 0.270 at VGS = 4.5 V 0.75 0.390 at VGS = 2.5 V 0.70 20 APPLICATIONS • Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switch D 1 3 S • 100 % Rg tested 1.4 nC SC-75 G • TrenchFET® power MOSFET Qg (TYP.) D G 2 Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 0.85 TC = 70 °C 0.75 ID TA = 25 °C Continuous Source-Drain Diode Current 0.6 a, b Maximum Power Dissipation IDM TC = 25 °C 0.4 0.3 TC = 25 °C 0.5 TC = 70 °C 0.3 PD TA = 25 °C 0.4 a, b W 0.3 a, b TA = 70 °C Operating Junction and Storage Temperature Range A 6 IS TA = 25 °C V 0.7 a, b TA = 70 °C Pulsed Drain Current (t = 300 μs) UNIT TJ, Tstg -55 to +150 Soldering Recommendations (Peak Temperature) 260 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient a, d t ≤ 10 s RthJA 250 300 Maximum Junction-to-Foot (Drain) Steady State RthJF 225 270 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Based on TC = 25 °C. d. Maximum under steady state conditions is 360 °C/W. E-mail：China@VBsemi TEL:86-755-83251052 1 AO5404E www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 20 - - V Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a - 32 - - -3 - VDS = VGS, ID = 250 μA 0.5 - 1.0 ID = 250 μA VDS = 0 V, VGS = 4.5 V - - 0.1 VDS = 0 V, VGS = ± 12 V - - ± 20 VDS = 20 V, VGS = 0 V - - 0.1 VDS = 20 V, VGS = 0 V, TJ = 55 °C - - 10 VDS ≥ 5 V, VGS = 10 V 2 - - VGS = 4.5 V, ID = 1 A - 0.270 - VGS = 2.5 V, ID = 0.5 A - 0.390 - VDS = 10 V, ID = 1.4 A - 5 - - 105 - - 23 - - 11 - - 2.7 4.1 - 1.4 2.1 VDS = 15 V, VGS = 4.5 V, ID = 1.4 A - 0.3 - - 0.5 - f = 1 MHz 1.4 7 14 - 2 4 - 9 18 - 8 16 RDS(on) gfs mV/°C V μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 1.4 A td(on) tr td(off) VDD = 15 V, RL = 13.6 Ω ID ≅ 1.1 A, VGEN = 10 V, Rg = 1 Ω tf - 8 16 td(on) - 8 16 - 13 20 - 15 23 - 6 12 tr td(off) VDD = 15 V, RL = 13.6 Ω ID ≅ 1.1 A, VGEN = 4.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IF = 1.1 A IF = 1.1 A, dI/dt = 100 A/μs, TJ = 25 °C - - 0.4 - - 6 A - 0.8 1.2 V - 8 16 ns - 3 6 nC - 5 - - 3 - ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 2 AO5404E www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-3 0.006 TJ = 25 °C 10-4 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.005 0.004 0.003 0.002 10-5 TJ = 150 °C 10-6 TJ = 25 °C 10-7 10-8 0.001 10-9 0.000 0 VGS - Gate-Source Voltage (V) 5 10 VGS - Gate-to-Source Voltage (V) Gate Source Voltage vs. Gate Current Gate Source Voltage vs. Gate Current 3 6 9 12 0 15 6 15 0.20 RDS(on) - On-Resistance (Ω) VGS = 10 V thru 3 V ID - Drain Current (A) 4.5 3 VGS = 2 V 1.5 0.17 VGS = 2.5 V 0.14 VGS = 4.5 V 0.10 VGS = 10 V 0.08 0 0 0.5 1 0 2 1.5 1.5 3 4.5 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 6 10 2 VGS - Gate-to-Source Voltage (V) ID = 1.4 A ID - Drain Current (A) 1.5 1 TC = 25 °C 0.5 TC = 125 °C TC = - 55 °C 0 0 0.5 1 1.5 2 8 VDS = 8 V 6 VDS = 15 V 4 VDS = 14 V 2 0 0 0.7 1.4 2.1 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) Transfer Characteristics Gate Charge E-mail：China@VBsemi TEL:86-755-83251052 2.8 3 AO5404E www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.65 10 1.40 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) ID = 1.5 A 1.15 VGS = 10 V; 4.5 V 0.90 TJ = 150 °C 1 TJ = 25 °C 0.1 0.65 - 50 - 25 0 25 50 75 100 125 0.0 150 0.3 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.3 0.25 ID = 250 μA ID = 1.5 A TJ = 125 °C VGS(th) (V) RDS(on) - On-Resistance (Ω) 1.15 0.2 0.15 TJ = 25 °C 1 0.85 0.1 0.7 0.55 - 50 0.05 0 2 4 6 8 10 - 25 0 25 50 75 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 100 125 150 10 10 Limited by RDS(on)* 8 100 μs ID - Drain Current (A) Power (W) 1 6 4 1 ms 10 ms 0.1 100 ms DC, 10 s, 1 s 0.01 2 TA = 25 °C 0 0.001 BVDSS Limited 0.001 0.01 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient E-mail：China@VBsemi TEL:86-755-83251052 100 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient 4 AO5404E www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.8 ID - Drain Current (A) 1.35 0.9 0.45 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 0.6 0.45 0.5 0.36 Power (W) Power (W) 0.4 0.3 0.27 0.18 0.2 0.09 0.1 0.0 0.00 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 5 AO5404E www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 360 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 6 AO5404E www.VBsemi.tw SC-75A: 3 Leads L2 A 2 D 1 D bbb D e2 2X D 3 L1 L B1(b1) 3 e1 3 E/2 1 2 E E1 1 1 bbb D 1 2 C bbb C D 4 ddd M C B 3 2X e3 B1 b1 2XB1 A– B B B 2X D c1 C With Tin Planting bbb D Section B-B 5 A A2 Base Metal C 4X Seating Plane A1 D Notes Dimensions in millimeters will govern. 1. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interelead flash, but including any mismatch between the top and bottom of the plastic body. 3. Datums A, B and D to be determined 0.10 mm from the lead tip. 4. Terminal positions are shown for reference only. 5. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. DIM. MILLIMETERS MIN. NOM. MAX. A - - 0.80 0.10 A1 0.00 - A2 0.65 0.70 0.80 B1 0.19 - 0.24 b1 0.17 - 0.21 5 c 0.13 - 0.15 c1 0.10 - 0.12 5 D 1.48 1.575 1.68 1, 2 E 1.50 1.60 1.70 E1 0.66 0.76 0.86 e1 0.50 BSC e2 1.00 BSC DIMENSIONS TOLERANCES e3 aaa 0.10 L bbb 0.10 L1 ccc 0.10 L2 ddd 0.10 θ 0° - 8° θ1 4° - 10° E-mail：China@VBsemi TEL:86-755-83251052 NOTE 5 1, 2 0.50 BSC 0.15 0.205 0.30 0.40 ref. 0.15 BSC 7 AO5404E www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 0.031 (0.798) 0.020 (0.503) 0.071 (1.803) (0.356) 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail：China@VBsemi TEL:86-755-83251052 8 AO5404E www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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