AO4816

AO4816 www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.016 at V GS = 10 V 8.5 0.020 at VGS = 4.5 V 7.6 VDS (V) 30 • TrenchFETPower MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 7.1 APPLICATIONS • Notebook System Power • Low Current DC/DC D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Limit 30 ± 20 8.5 7.5 ID Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation Operating Junction and Storage Temperature Range A 1.8b, c 30 10 5 3.1 2.0 ISM IAS EAS L = 0.1 mH V 7.2b, c 5.9b, c 30 2.8 IDM TC = 25 °C TA = 25 °C Unit PD W 2.0b, c 1.25b, c - 55 to 150 TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t  10 s Steady-State Symbol RthJA RthJF Typ. Max. Unit 52 30 62.5 40 °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 °C/W. E-mail：China@VBsemi TEL:86-755-83251052 1 AO4816 www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. 30 Typ. Max. Unit Static VDS VGS = 0 V, ID = 250 µA VDS/TJ ID = 250 µA 3.0 VGS(th)/TJ ID = 250 µA - 5.2 Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th) VDS = VGS, ID= 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On -State Drain Currentb ID(on) Gate Threshold Voltage Drain-Source On-State Resistanceb Forward Transconductanceb RDS(on) gfs V 1.2 mV/°C 2.5 V 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS = 5 V, VGS = 10 V 20 µA A VGS = 10 V, ID = 8 A 0.016 VGS = 4.5 V, ID = 5 A 0.020 VDS = 15 V, ID = 8 A 27 VDS = 15 V, VGS = 0 V, ID = 1 MHz 140 VDS = 15 V, VGS = 10 V, ID = 8 A 14.5 22 7.1 11  S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 660 86 VDS = 15 V, VGS = 4.5 V, ID = 8 A 5.2 28 45 80 18 35 tf 12 24 td(on) 7 14 10 20 td(off) Fall Time Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 15 V, RL = 3  ID  5 A, VGEN = 4.5 V, Rg = 1  VDD = 15 V, RL = 3  ID  5 A, VGEN = 10 V, Rg = 1  tf Fall Time nC 2.7 14 tr Rise Time Turn-Off Delay Time 1.9 2.6 f = 1 MHz td(on) Turn-On Delay Time pF 0.5 15 30 7 14  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 2.8 ISM VSD 30 IS = 2 A A 0.77 1.1 Body Diode Reverse Recovery Time trr 17 34 ns Body Diode Reverse Recovery Charge Qrr 9 18 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 10 7 V nS Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 2 AO4816 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 40 VGS = 10 V thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 32 24 VGS = 3 V 16 6 4 TC = 25 °C 2 8 TC = 125 °C 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 0 2.5 1 0.030 1000 0.026 800 5 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 4 Transfer Characteristics Output Characteristics 0.022 VGS = 4.5 V 0.018 600 400 Coss 200 VGS = 10 V Crss 0 0.010 0 10 20 30 40 0 50 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.8 10 ID = 8 A ID = 8 A 1.6 8 VDS = 10 V 6 VDS = 20 V VDS = 15 V 4 2 0 0.0 VGS = 10 V 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.014 2 1.2 VGS = 4.5 V 1.0 0.8 3.2 6.4 9.6 12.8 16 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature E-mail：China@VBsemi TEL:86-755-83251052 150 3 AO4816 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.10 100 ID = 8 A I S - Source Current (A) R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.01 0.08 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 1.0 0.8 1.2 0 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.5 50 0.2 40 - 0.1 Power (W) VGS(th) Variance (V) 1 ID = 5 mA - 0.4 30 20 ID = 250 µA - 0.7 - 1.0 - 50 10 - 25 0 25 50 75 100 125 0 0 .001 150 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 1s 10 s DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient E-mail：China@VBsemi TEL:86-755-83251052 4 AO4816 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 I D - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.6 0.3 0.8 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 5 AO4816 www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 6 AO4816 www.VBsemi.tw SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS DIM Min INCHES Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 E-mail：China@VBsemi TEL:86-755-83251052 7 AO4816 www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index E-mail：China@VBsemi TEL:86-755-83251052 8 AO4816 Disclaimer www.VBsemi.tw All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: ( 1) any application and all liability arising out of or use of any products; ( 2) any and all liability, including but not limited to special, consequential damages or incidental ; ( 3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 R i Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 9