0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
AM2394NE

AM2394NE

  • 厂商:

    VBSEMI(微碧)

  • 封装:

    SOT-23

  • 描述:

    Vds=100V Id=1.6A SOT23-3

  • 数据手册
  • 价格&库存
AM2394NE 数据手册
AM2394NE www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.240 at VGS = 10 V 2.0 0.250 at VGS = 6 V 1.8 0.260 at VGS = 4.5 V 1.7 VDS (V) 100 Qg (Typ.) 2.9 nC • • • • TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Material categorization: APPLICATIONS • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs G 1 3 S D 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 100 ± 20 2 1.8 1.6b, c 1.3b, c 7 2.1 1.0b, c 5 1.25 2.5 1.6 1.25b, c 0.8b, c - 55 to 150 ID IDM Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter 5 s Maximum Junction-to-Ambientb, d Steady State Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. E-mail:China@VBsemi TEL:86-755-83251052 Symbol RthJA RthJF Typical 75 40 Maximum 100 50 Unit °C/W 1 AM2394NE www.VBsemi.tw MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs 105 ID = 250 µA Gate-Source Leakage V mV/°C - 5.2 1.2 2.8 V ± 100 nA VDS = 100 V, VGS = 0 V -1 VDS = 100 V, VGS = 0 V, TJ = 55 °C - 10 VDS 5 V, VGS = 4.5 V 5 µA A VGS = 10 V, ID = 1.5 A 0.240 VGS = 6 V, ID = 1 A 0.250 VGS = 4.5 V, ID = 0.5 A 0.260 VDS = 20 V, ID = 1.5 A 2.0  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 190 VDS = 50 V, VGS = 0 V, f = 1 MHz 22 VDS = 50 V, VGS = 10 V, ID = 1.6 A 5.2 10.4 2.9 5.8 13 VDS = 50 V, VGS = 4.5 V, ID = 1.6 A td(off) 0.75 VDD = 50 V, RL = 39  ID = 1.3 A, VGEN = 4.5 V, Rg = 1  0.3 1.4 2.8 30 45 26 39 17 26 tf 12 20 td(on) 6 12 10 20 tr td(off) nC 1.4 f = 1 MHz td(on) tr pF VDD = 50 V, RL = 39  ID = 1.3 A, VGEN = 10 V, Rg = 1  tf 10 20 6 12  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 °C - 2.1 - 20 IS = 1.3 A - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 22 33 ns Body Diode Reverse Recovery Charge Qrr 21 32 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C 16 6 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail:China@VBsemi TEL:86-755-83251052 2 AM2394NE www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 3 VGS = 10 V thru 5 V VGS = 4.5V 2.4 ID - Drain Current (A) ID - Drain Current (A) 4 3 2 VGS = 3 V 1 1.8 TC = 25 °C 1.2 0.6 TC = 125 °C TC = - 55 °C 0 0 0 0.5 1 1.5 2 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 300 240 VGS = 4.5 V 0.300 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.350 VGS = 6 V 0.250 0.200 VGS = 10 V Ciss 180 120 60 0.150 Coss Crss 0 0 1 2 3 4 5 0 20 40 ID - Drain Current (A) 80 100 Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 2.2 ID = 1.6 A ID = 1.5 A 8 VDS = 25 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 60 VDS - Drain-to-Source Voltage (V) 6 VDS = 50 V 4 VDS = 80 V 1.75 VGS = 6 V 1.3 0.85 2 VGS = 10 V 0 0.4 0 1.5 3 4.5 Qg - Total Gate Charge (nC) Gate Charge E-mail:China@VBsemi TEL:86-755-83251052 6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 AM2394NE www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.4 0.3 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 1.5 A TJ = 150 °C 1 TJ = 125 °C 0.2 T = 25 °C 0.15 TJ = 25 °C 0.1 0.0 0 0.3 0.6 0.9 2 1.2 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.8 10 8 Power (W) 2.5 VGS(th) (V) 4 ID = 250 μA 2.2 6 4 1.9 2 1.6 - 50 - 25 0 25 50 75 100 125 TA = 25 °C 0 0.01 150 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 10 Limited by R DS(on)* 100 μs ID - Drain Current (A) 1 1 ms 10 ms 0.1 100 ms 1 s, 10 s 0.01 DC TA = 25 °C Single Pulse 0.001 0.1 1 BVDSS Limited 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area E-mail:China@VBsemi TEL:86-755-83251052 4 AM2394NE www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.8 ID - Drain Current (A) 2.1 1.4 0.7 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 3 1.0 2.4 0.8 1.8 0.6 Power (W) Power (W) Current Derating* 1.2 0.6 0.4 0.2 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail:China@VBsemi TEL:86-755-83251052 5 AM2394NE www.VBsemi.tw A= 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C ) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. E-mail:China@VBsemi TEL:86-755-83251052 6 AM2394NE www.VBsemi.tw SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 E-mail:China@VBsemi TEL:86-755-83251052 7 AM2394NE www.VBsemi.tw 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index E-mail:China@VBsemi TEL:86-755-83251052 8 AM2394NE www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: ( 1) any application and all liability arising out of or use of any products; ( 2) any and all liability, including but not limited to special, consequential damages or incidental ; ( 3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be R oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 R i Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail:China@VBsemi TEL:86-755-83251052 9
AM2394NE 价格&库存

很抱歉,暂时无法提供与“AM2394NE”相匹配的价格&库存,您可以联系我们找货

免费人工找货