WL2803E33-5/TR

WL2803E WL2803E Http://www.sh-willsemi.com Ultra low dropout, 500mA, CMOS LDO Descriptions The WL2803E series are ultra low dropout, Low quiescent current, high PSRR CMOS LDO. The dropout voltage is 130mV (Typ.) at 500mA load current. SOT-23-5L Using CMOS construction, the quiescent current consumed by the WL2803E is typically 150uA over the VOUT entire input voltage range, making it attractive for NC 4 5 consumer, networking applications that demand high output current. The WL2803E series are available in wide output voltage range version from 1.2V to 3.3V with 0.1V step. The WL2803E series offer thermal shutdown (OTP) and current limit functions, to assure the stability of 1 2 3 VIN GND EN Pin Configuration (Top View) chip and power system at wrong condition, and it uses trimming technique to guarantee output voltage 5 4 accuracy within ±2%. WS ** YYWW The WL2803E regulators are available in SOT-23-5L packages. Standard products are Pb-free and Halogen-free. 1 Features 2 3 WS = Device code  Input voltage : 2.5V~5.5V **  Output voltage : 1.2V~3.3V YY = Year code  Output current : 500mA WW = Week code  PSRR : 65dB @ 1KHz  Dropout voltage : 130mV @ IOUT=0.5A  Output noise : 100uV  Quiescent current : 150μA Typ. = Voltage code (33: 3.3V) Marking Order Information For detail information, Please refer to page 9. Applications  LCD TV  STB  Computer, Graphic card  Network communication equipments  Others portable electronics devices Will Semiconductor Ltd. 1 Aug. 2016 – Rev1.9 WL2803E Typical Application Pin Description VIN 4.7uF 1 5 VOUT 4.7uF 2 3 4 ON OFF PIN Symbol Description 1 VIN Input 2 GND Ground 3 EN Enable, Active High 4 NC Not connect 5 VOUT Output When the output is less than 2V, it is recommended that the Cout is more than 10uF. Block Diagram VOUT VIN Current Limit VREF EN Enable Control OTP GND Will Semiconductor Ltd. 2 Aug. 2016 – Rev1.9 WL2803E Absolute Maximum Ratings Parameter Symbol Input voltage range Output voltage range Value VIN -0.3～6.5 V VOUT -0.3～VIN V 0.7 W 1 3 Power dissipation * * PD 2 3 Power dissipation * * Thermal resistance * 1 Thermal resistance * 2 0.5 RθJA Junction temperature ESD Ratings 180 250 o C/W C/W o 260 o Tstg -55 ~ 150 o HBM ±8000 V MM ±400 V TL Storage temperature W o 150 TJ Lead temperature(10s) Unit C C C Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. *1: Surface mounted on FR-4 Board using 1 square inch pad size, dual side, 1oz copper *2: Surface mounted on FR-4 board using minimum pad size, 1oz copper *3: Power dissipation is calculate by PD = (VIN-VOUT) x IOUT Recommend Operating Ratings Parameter Symbol Operating Supply voltage VIN Operating Temperature Range Will Semiconductor Ltd. Topr 3 Value Unit 2.5～5.5 -40～85 V o C Aug. 2016 – Rev1.9 WL2803E o Electronics Characteristics (Ta=25 C, VIN=VOUT+1V, CIN=COUT=4.7uF, unless otherwise noted) Parameter Symbol Condition VOUT