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CD74HC368E

CD74HC368E

  • 厂商:

    L3HARRIS

  • 封装:

    DIP16

  • 描述:

    IC BUFFER INVERT 6V 16DIP

  • 详情介绍
  • 数据手册
  • 价格&库存
CD74HC368E 数据手册
[ /Title (CD74 HC367 , CD74 HCT36 7, CD74 HC368 , CD74 HCT36 8) /Subject (High Speed CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368 Data sheet acquired from Harris Semiconductor SCHS181D November 1997 - Revised October 2003 High-Speed CMOS Logic Hex Buffer/Line Driver, Three-State Non-Inverting and Inverting Features Ordering Information • Buffered Inputs PART NUMBER • High Current Bus Driver Outputs TEMP. RANGE (oC) PACKAGE CD54HC367F3A -55 to 125 16 Ld CERDIP • Two Independent Three-State Enable Controls CD54HC368F3A -55 to 125 16 Ld CERDIP • Typical Propagation Delay tPLH, tPHL = 8ns at VCC = 5V, CL = 15pF, TA = 25oC CD54HCT367F3A -55 to 125 16 Ld CERDIP CD74HC367E -55 to 125 16 Ld PDIP • Fanout (Over Temperature Range) - Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads - Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads CD74HC367M -55 to 125 16 Ld SOIC CD74HC367MT -55 to 125 16 Ld SOIC CD74HC367M96 -55 to 125 16 Ld SOIC • Wide Operating Temperature Range . . . -55oC to 125oC CD74HC368E -55 to 125 16 Ld PDIP CD74HC368M -55 to 125 16 Ld SOIC CD74HC368MT -55 to 125 16 Ld SOIC • Significant Power Reduction Compared to LSTTL Logic ICs CD74HC368M96 -55 to 125 16 Ld SOIC CD74HCT367E -55 to 125 16 Ld PDIP • HC Types - 2V to 6V Operation - High Noise Immunity: NIL = 30%, NIH = 30% of VCC at VCC = 5V CD74HCT367M -55 to 125 16 Ld SOIC CD74HCT367MT -55 to 125 16 Ld SOIC CD74HCT367M96 -55 to 125 16 Ld SOIC CD74HCT368E -55 to 125 16 Ld PDIP • HCT Types - 4.5V to 5.5V Operation - Direct LSTTL Input Logic Compatibility, VIL= 0.8V (Max), VIH = 2V (Min) - CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH CD74HCT368M -55 to 125 16 Ld SOIC CD74HCT368MT -55 to 125 16 Ld SOIC CD74HCT368M96 -55 to 125 16 Ld SOIC • Balanced Propagation Delay and Transition Times NOTE: When ordering, use the entire part number. The suffix 96 denotes tape and reel. The suffix T denotes a small-quantity reel of 250. Description The ’HC367, ’HCT367, ’HC368, and CD74HCT368 silicon gate CMOS three-state buffers are general purpose high-speed non-inverting and inverting buffers. They have high drive current outputs which enable high speed operation even when driving large bus capacitances. These circuits possess the low power dissipation of CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable of driving up to 15 low power Schottky inputs. The ’HC367 and ’HCT367 are non-inverting buffers, whereas the ’HC368 and CD74HCT368 are inverting buffers. These devices have two output enables, one enable (OE1) controls 4 gates and the other (OE2) controls the remaining 2 gates. The ’HCT367 and CD74HCT368 logic families are speed, function and pin compatible with the standard LS logic family. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © 2003, Texas Instruments Incorporated 1 CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368 Pinouts CD54HC367, CD54HCT367 (CERDIP) CD74HC367, CD74HCT367 (PDIP, SOIC) TOP VIEW CD54HC368 (CERDIP) CD74HC368, CD74HCT368 (PDIP, SOIC) TOP VIEW OE1 1 16 VCC OE1 1 16 VCC 1A 2 15 OE2 1A 2 15 OE2 1Y 3 14 6A 1Y 3 14 6A 2A 4 13 6Y 2A 4 13 6Y 2Y 5 12 5A 2Y 5 12 5A 3A 6 11 5Y 3A 6 11 5Y 3Y 7 10 4A 3Y 7 10 4A GND 8 9 4Y GND 8 9 4Y Functional Diagrams HC367, HCT367 OE1 1A 1Y 2A 2Y HC368, CD74HCT368 1 16 2 15 3 14 4 13 5 12 6 11 3A 3Y GND VCC OE1 OE2 1A 6A 1Y 6Y 2A 5A 2Y 5Y 3A 4A 3Y 4Y GND 10 7 8 9 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 OUTPUTS (Y) OE A HC/HCT367 HC/HCT368 L L L H L H H L H X (Z) (Z) H = High Voltage Level L = Low Voltage Level X = Don’t Care Z = High Impedance (OFF) State 2 OE2 6A 6Y 5A 5Y 4A TRUTH TABLE INPUTS VCC 4Y CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368 Logic Diagram VCC 16 ONE OF SIX IDENTICAL CIRCUITS 2 1A 3 (NOTE 1) 1Y GND 8 1 OE1 4 15 5 2A 2Y OE2 6 7 3A 3Y 10 4A 9 4Y 12 5A 11 5Y 14 6A 13 6Y NOTE: 1. Inverter not included in HC/HCT367 FIGURE 1. LOGIC DIAGRAM FOR THE HC/HCT367 AND HC/HCT368 (OUTPUTS FOR HC/HCT367 ARE COMPLEMENTS OF THOSE SHOWN, i.e., 1Y, 2Y, ETC.) 3 CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368 Absolute Maximum Ratings Thermal Information DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V DC Input Diode Current, IIK For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA DC Output Diode Current, IOK For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA DC Drain Current, per Output, IO For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA Thermal Resistance (Typical, Note 2) θJA (oC/W) E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . 67 M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . . 73 Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Supply Voltage Range, VCC HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC Input Rise and Fall Time 2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max) 4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max) 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 2. The package thermal impedance is calculated in accordance with JESD 51-7. DC Electrical Specifications TEST CONDITIONS SYMBOL VI (V) High Level Input Voltage VIH - Low Level Input Voltage VIL High Level Output Voltage CMOS Loads VOH PARAMETER 25oC IO (mA) VCC (V) MIN TYP -40oC TO 85oC MAX MIN MAX -55oC TO 125oC MIN MAX UNITS HC TYPES - VIH or VIL High Level Output Voltage TTL Loads Low Level Output Voltage CMOS Loads VOL VIH or VIL Low Level Output Voltage TTL Loads - - 2 1.5 - - 1.5 - 1.5 - V 4.5 3.15 - - 3.15 - 3.15 - V 6 4.2 - - 4.2 - 4.2 - V 2 - - 0.5 - 0.5 - 0.5 V 4.5 - - 1.35 - 1.35 - 1.35 V 6 - - 1.8 - 1.8 - 1.8 V -0.02 2 1.9 - - 1.9 - 1.9 - V -0.02 4.5 4.4 - - 4.4 - 4.4 - V -0.02 6 5.9 - - 5.9 - 5.9 - V -6 4.5 3.98 - - 3.84 - 3.7 - V -7.8 6 5.48 - - 5.34 - 5.2 - V 0.02 2 - - 0.1 - 0.1 - 0.1 V 0.02 4.5 - - 0.1 - 0.1 - 0.1 V 0.02 6 - - 0.1 - 0.1 - 0.1 V 6 4.5 - - 0.26 - 0.33 - 0.4 V 7.8 6 - - 0.26 - 0.33 - 0.4 V II VCC or GND - 6 - - ±0.1 - ±1 - ±1 µA Quiescent Device Current ICC VCC or GND 0 6 - - 8 - 80 - 160 µA Three-State Leakage Current IOZ VIL or VIH VO = VCC or GND 6 - - ±0.5 - ±5.0 - ±10 µA Input Leakage Current 4 CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368 DC Electrical Specifications (Continued) TEST CONDITIONS SYMBOL VI (V) High Level Input Voltage VIH - - Low Level Input Voltage VIL - High Level Output Voltage CMOS Loads VOH VIH or VIL PARAMETER 25oC -40oC TO 85oC -55oC TO 125oC MIN TYP MAX MIN MAX MIN MAX UNITS 4.5 to 5.5 2 - - 2 - 2 - V - 4.5 to 5.5 - - 0.8 - 0.8 - 0.8 V -0.02 4.5 4.4 - - 4.4 - 4.4 - V -4 4.5 3.98 - - 3.84 - 3.7 - V 0.02 4.5 - - 0.1 - 0.1 - 0.1 V 4 4.5 - - 0.26 - 0.33 - 0.4 V IO (mA) VCC (V) HCT TYPES High Level Output Voltage TTL Loads Low Level Output Voltage CMOS Loads VOL VIH or VIL Low Level Output Voltage TTL Loads II VCC to GND 0 5.5 - - ±0.1 - ±1 - ±1 µA ICC VCC or GND 0 5.5 - - 8 - 80 - 160 µA Additional Quiescent Device Current Per Input Pin: 1 Unit Load ∆ICC (Note 3) VCC -2.1 - 4.5 to 5.5 - 100 360 - 450 - 490 µA Three-State Leakage Current IOZ VIL or VIH VO = VCC or GND 5.5 - - ±0.5 - ±5.0 - ±10 µA Input Leakage Current Quiescent Device Current NOTE: 3. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA. HCT Input Loading Table INPUT UNIT LOADS OE1 0.6 All Others 0.55 NOTE: Unit Load is ∆ICC limit specified in DC Electrical Specifications table, e.g., 360µA max at 25oC. Switching Specifications PARAMETER Input tr, tf = 6ns SYMBOL TEST CONDITIONS tPLH, tPHL CL = 50pF 25oC -40oC TO 85oC -55oC TO 125oC VCC (V) TYP MAX MAX MAX UNITS 2 - 105 130 160 ns 4.5 - 21 26 32 ns 6 - 18 24 27 ns 5 8 - - - ns HC TYPES Propagation Delay, Data to Outputs HC/HCT367 CL = 15pF 5 CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368 Switching Specifications PARAMETER Propagation Delay, Data to Outputs HC/HCT368 Propagation Delay, Output Enable and Disable to Outputs Output Transition Time Input tr, tf = 6ns (Continued) SYMBOL TEST CONDITIONS tPLH, tPHL CL = 50pF tPLH, tPHL tTLH, tTHL 25oC -40oC TO 85oC -55oC TO 125oC VCC (V) TYP MAX MAX MAX UNITS 2 - 105 130 160 ns 4.5 - 21 26 32 ns 6 - 18 24 27 ns CL = 15pF 5 9 - - - ns CL = 50pF 2 - 150 190 225 ns 4.5 - 30 38 45 ns 6 - 26 33 38 ns CL = 15pF 5 12 - - - ns CL = 50pF 2 - 60 75 90 ns 4.5 - 12 15 18 ns 6 - 10 13 15 ns Input Capacitance CI - - - 10 10 10 pF Three-State Output Capacitance CO - - - 20 20 20 pF Power Dissipation Capacitance (Notes 4, 5) CPD - 5 40 - - - pF CL = 50pF 4.5 - 25 31 38 ns CL = 15pF 5 9 - - - ns CL = 50pF 4.5 - 30 38 45 ns CL = 15pF 5 11 - - - ns CL = 50pF 4.5 - 35 44 53 ns CL = 15pF 5 14 - - - ns CL = 50pF 4.5 - 12 15 18 ns HCT TYPES Propagation Delay, Data to Outputs HC/HCT367 tPLH, tPHL Propagation Delay, Data to Outputs HC/HCT368 tPLH, tPHL Propagation Delay, Output Enable and Disable to Outputs tPLH, tPHL Output Transition Time tTLH, tTHL Input Capacitance CIN - - - 10 10 10 pF Three-State Capacitance CO - - - 20 20 20 pF Power Dissipation Capacitance (Notes 4, 5) CPD - 5 42 - - - pF NOTES: 4. CPD is used to determine the dynamic power consumption, per buffer. 5. PD = VCC2fi (CPD + CL) where fi = Input Frequency, CL = Output Load Capacitance, VCC = Supply Voltage. 6 CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368 Test Circuits and Waveforms tr = 6ns tf = 6ns 90% 50% 10% INPUT GND tTLH tPHL 6ns 10% 2.7 1.3 OUTPUT LOW TO OFF 90% OUTPUT HIGH TO OFF 50% OUTPUTS DISABLED FIGURE 4. HC THREE-STATE PROPAGATION DELAY WAVEFORM OTHER INPUTS TIED HIGH OR LOW OUTPUT DISABLE IC WITH THREESTATE OUTPUT GND 1.3V tPZH 90% OUTPUTS ENABLED OUTPUTS ENABLED 0.3 10% tPHZ tPZH 3V tPZL tPLZ 50% OUTPUTS ENABLED 6ns GND 10% tPHZ tf OUTPUT DISABLE tPZL tPLZ OUTPUT HIGH TO OFF 6ns tr VCC 90% tPLH FIGURE 3. HCT TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC 6ns OUTPUT LOW TO OFF 1.3V 10% INVERTING OUTPUT FIGURE 2. HC TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC 50% tTLH 90% tPLH tPHL GND tTHL 90% 50% 10% INVERTING OUTPUT 3V 2.7V 1.3V 0.3V INPUT tTHL OUTPUT DISABLE tf = 6ns tr = 6ns VCC 1.3V OUTPUTS DISABLED OUTPUTS ENABLED FIGURE 5. HCT THREE-STATE PROPAGATION DELAY WAVEFORM OUTPUT RL = 1kΩ CL 50pF VCC FOR tPLZ AND tPZL GND FOR tPHZ AND tPZH NOTE: Open drain waveforms tPLZ and tPZL are the same as those for three-state shown on the left. The test circuit is Output RL = 1kΩ to VCC, CL = 50pF. FIGURE 6. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT 7 PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) 5962-9070601MEA ACTIVE CDIP J 16 1 TBD Call TI N / A for Pkg Type -55 to 125 5962-9070601ME A CD54HCT367F3A CD54HC367F3A ACTIVE CDIP J 16 1 TBD Call TI N / A for Pkg Type -55 to 125 8500201EA CD54HC367F3A CD54HC368F3A ACTIVE CDIP J 16 1 TBD Call TI N / A for Pkg Type -55 to 125 5962-8681201EA CD54HC368F3A CD54HCT367F3A ACTIVE CDIP J 16 1 TBD Call TI N / A for Pkg Type -55 to 125 5962-9070601ME A CD54HCT367F3A CD74HC367E ACTIVE PDIP N 16 25 Green (RoHS & no Sb/Br) NIPDAU N / A for Pkg Type -55 to 125 CD74HC367E CD74HC367M ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HC367M CD74HC367M96 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HC367M CD74HC367MT ACTIVE SOIC D 16 250 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HC367M CD74HC368E ACTIVE PDIP N 16 25 Green (RoHS & no Sb/Br) NIPDAU N / A for Pkg Type -55 to 125 CD74HC368E CD74HC368M ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HC368M CD74HC368ME4 ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HC368M CD74HCT367E ACTIVE PDIP N 16 25 Green (RoHS & no Sb/Br) NIPDAU N / A for Pkg Type -55 to 125 CD74HCT367E CD74HCT367M ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HCT367M CD74HCT367M96 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HCT367M CD74HCT367MG4 ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HCT367M CD74HCT367MT ACTIVE SOIC D 16 250 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HCT367M Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 6-Feb-2020 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) CD74HCT368E ACTIVE PDIP N 16 25 Green (RoHS & no Sb/Br) NIPDAU N / A for Pkg Type -55 to 125 CD74HCT368E CD74HCT368M ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HCT368M CD74HCT368M96 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HCT368M CD74HCT368MG4 ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HCT368M CD74HCT368MT ACTIVE SOIC D 16 250 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HCT368M (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
CD74HC368E
物料型号: - CD54HC367F3A - CD54HC368F3A - CD54HCT367F3A - CD74HC367E - CD74HC367M - CD74HC367MT - CD74HC367M96 - CD74HC368E - CD74HC368M - CD74HC368MT - CD74HC368M96 - CD74HCT367E - CD74HCT367M - CD74HCT367MT - CD74HCT367M96 - CD74HCT368E - CD74HCT368M - CD74HCT368MT - CD74HCT368M96

器件简介: 这些是硅门CMOS三态缓冲器,具有高速非反相和反相缓冲功能。它们具有高驱动电流输出,即使在驱动大电容总线时也能实现高速操作。这些电路具有CMOS电路的低功耗特性,但速度可与低功耗肖特基TTL电路相媲美。这些设备能够驱动多达15个低功耗肖特基输入。

引脚分配: - CD54HC367、CD54HCT367、CD74HC367、CD74HCT367(PDIP, SOIC)的引脚分配图示出,OE1和OE2分别控制不同的门。 - CD54HC368(CERDIP)和CD74HC368、CD74HCT368(PDIP, SOIC)的引脚分配图示出,OE1控制1A到4A的门,OE2控制5A和6A的门。

参数特性: - 典型传播延迟tPLH, tPHL = 8ns(在5V电源电压、15pF负载电容、25摄氏度环境温度下) - 工作温度范围:-55摄氏度至125摄氏度 - HC类型:2V至6V操作,高噪声免疫 - HCT类型:4.5V至5.5V操作,直接LSTTL输入逻辑兼容性

功能详解: - ’HC367和’HCT367是非反相缓冲器,而’HC368和CD74HCT368是反相缓冲器。 - 这些设备有两个输出使能,一个使能(OE1)控制4个门,另一个(OE2)控制剩余的2个门。 - ’HCT367和CD74HCT368逻辑系列与标准LS逻辑系列在速度、功能和引脚上兼容。

应用信息: - 这些设备适用于需要高速操作和低功耗的应用,例如在驱动大型总线电容时。

封装信息: - 提供多种封装类型,包括CERDIP、PDIP、SOIC等。 - 封装信息还包括引脚数、封装类型、封装数量、环保计划、引脚/球面处理、MSL峰值温度、操作温度范围和设备标记。

注意事项: - 这些设备对静电放电敏感,用户应遵循适当的IC处理程序。

版权信息: - 版权所有 © 2003,德州仪器公司。
CD74HC368E 价格&库存

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