TMR1212S

Datasheet V1.0 TMR1212 Bi-stable TMR Bipolar Magnetic Switch with Passive Memory Effect General Description The TMR1212 is a bi-stable digital bipolar magnetic switch that integrates TMR and CMOS technology in order to provide a magnetically triggered digital switch with high sensitivity, high speed, and ultra-low power consumption. It integrates a push-pull half-bridge TMR magnetic sensor and CMOS signal processing circuitry within the same package. Compared with conventional magnetic switch sensors, TMR1212 can detect and store the ON/OFF state triggered by magnetic polarity without power supply, and the latest state can be retrieved immediately after power supply is resumed. Designed for use in applications that are power-critical, performance-demanding, and failsafe, this device includes an on-chip TMR voltage generator for precise magnetic sensing, TMR voltage amplifier and comparator, a Schmitt trigger to provide switching hysteresis for noise rejection, and CMOS push-pull output. An internal band gap regulator is used to provide temperature compensated supply voltage for internal circuits, and it allows a wide range of operating supply voltages. The TMR1212 draws only 1.5μA resulting in ultra-low power operation, additionally it has fast response, accurate switching points, excellent thermal stability, and immunity to stray field interference. It is available in two packaging form factors: SOT23-3 (P/N TMR1212S), or TO-92S (P/N TMR1212T). Features and Benefits  Tunneling Magnetoresistance (TMR) Technology  Ultra Low Power Consumption at 1.5uA  Passive Operation with Magnetic Memory Effect  High Frequency Response at 1KHz  Bipolar Latching Operation  Compatible with a Wide Range of Supply Voltages  Excellent Thermal Stability  High Tolerance to External Magnetic Field Interference Applications  Utility Meters including Water, Gas, and Heat Meters  Bi-stable Level Switches in Elevator Doors TMR1212S(Left), TMR1212T(Right)  Magnetic Flip Level Gauges  Solid State Switches  Speed Sensing  Rotary and Linear Position Sensing 1/6 Datasheet V1.0 Block Diagram Pin Configuration Pin No. Pin Name TO-92S TO-92S SOT23-3 Pin Function VOUT 1 2 Output GND 2 3 Ground VCC 3 1 Supply Voltage SOT23-3 Absolute Maximum Ratings Parameter Symbol Limit Unit Supply Voltage VCC 7 V Reverse Supply Voltage VRCC 0.3 V Output Current IOUTSINK 9 mA Magnetic Flux Density B 4000 G ESD level(HBM) VESD 4 kV Operating Temperature TA -40 ~125 °C Storage Temperature Tstg -50 ~ 150 °C Electrical Characteristics (VCC=3.0V, TA=25°C) Parameter Symbol Conditions Min Typ. Max Unit Supply Voltage VCC Operating 1.8 3.0 5.5 V Output High Voltage VOH Vcc-0.3 Vcc V Output Low Voltage VOL 0 0.2 V Supply Current ICC Response Frequency F Output Open Note: A 0.1μF capacitor is connected between VCC and GND during all tests in the above table. 2/6 1.5 μA 1000 Hz Datasheet V1.0 Magnetic Characteristics (VCC = 3.0V, TA = 25°C) Parameters Symbol Min Typ. Max Units Operate Point BOP 35 45 60 G Release Point BRP -60 -45 -35 G Hysteresis BH Operate Point for Passive Memory Effect BOPM Release Point for Passive Memory Effect BRPM 90 G 60 G -60 G Note: 1. Operate point for passive memory effect: in order to retain a stable passive latching operation without power supply, the applied magnetic field shall be stronger than BOP. A magnetic field >60 Gauss shall be sufficient to guarantee the triggering and storage of the ON state in the passive mode. 2. Release point for passive memory effect: in order to retain a stable passive latching operation without power supply, the applied magnetic field shall be stronger than BRP. A magnetic field BOP Low (On) North Pole B < BRP High (Off) Note: when power is turned on under zero magnetic field, the output is “High”. Sensing Direction of Magnetic Field Magnetic Flux (arrow indicates direction of N->S) 3/6 Datasheet V1.0 Application Information The output of the TMR1212 switches low (turns on) when a magnetic field parallel to the TMR sensor exceeds the operate point threshold, BOP. When the magnetic field is reduced below the release point, BRP, the device output goes high (turns off). The difference between the magnetic operate point and release point is the hysteresis BH of the device. It is strongly recommended that an external bypass capacitor be connected in close proximity to the device between the supply and ground to reduce noise. The typical value of the external capacitor is 0.1μF. Package Information SOT23-3 package drawing TO-92S package drawing 4/6 Datasheet V1.0 TMR Sensor Position Top view and side view (unit: mm) 5/6 Datasheet V1.0 MultiDimension Technology Co., Ltd. Address:No.7 Guangdong Road, Zhangjiagang Free Trade Zone, Jiangsu, 215634, China Web: www.dowaytech.com/en Email: info@dowaytech.com The information provided herein by MultiDimension Technology Co., Ltd. (hereinafter MultiDimension) is believed to be accurate and reliable. Publication neither conveys nor implies any license under patent or other industrial or intellectual property rights. MultiDimension reserves the right to make changes to product specifications for the purpose of improving product quality, reliability, and functionality. MultiDimension does not assume any liability arising out of the application and use of its products. MultiDimension’s customers using or selling this product for use in appliances, devices, or systems where malfunction can reasonably be expected to result in personal injury do so at their own risk and agree to fully indemnify MultiDimension for any damages resulting from such applications. 6/6