TMR1162T

Datasheet V1.2 TMR1162 Nano-Ampere TMR Unipolar Switch General Description The TMR1162 is a 200nA ultra-low power magnetic switch sensor. It is a unipolar magnetic switch that integrates TMR and CMOS technology in order to provide a magnetically triggered digital switch with high sensitivity, high speed, and ultra-low power consumption. It integrates a push-pull half-bridge TMR magnetic sensor and CMOS signal processing circuitry within the same package. Designed for use in applications that are both power-critical and performance-demanding, this device includes an on-chip TMR voltage generator for precise magnetic sensing, TMR voltage amplifier and comparator, a Schmitt trigger to provide switching hysteresis for noise rejection, and open-drain output. An internal band gap regulator is used to provide temperature compensated supply voltage for internal circuits, and it allows a wide range of operating supply voltages. The TMR1162 features ultra-low power consumption at 200nA with a fast internal switching frequency at 50Hz. Other important features include accurate switching points, excellent thermal stability, and a wide range of supply voltages. It is available in two packaging form factors: SOT23-3 (P/N TMR1162S), or TO-92S (P/N TMR1162T). Features and Benefits  Tunneling Magnetoresistance (TMR) Technology  Nano-Ampere Ultra-low Power Consumption at 200nA  Fast Internal Switching Frequency at 50Hz  Unipolar Operation with High Sensitivity  Operating Temperature Range from -40C to 125C  Wide Range of Supply Voltages from 1.8V to 5.5V  Open-drain Output Applications  Utility Meters including Water, Gas, and Heat Meters TMR1162S (Left), TMR1162T (Right)  Speed Sensing and Position Sensing  Motor and Fan Control  Power Window Block Diagram 1/5 Datasheet V1.2 Pin Configuration Pin No. Pin Name TO-92S TO-92S SOT23-3 Pin Function VOUT 1 2 Output GND 2 3 Ground VCC 3 1 Supply Voltage SOT23-3 Absolute Maximum Ratings Characteristic Symbol Rating Units Supply Voltage VCC 7 V Reverse Supply Voltage VRCC 0.3 V Output Current IOUTSINK 20 mA Magnetic Flux Density B 4000 G ESD Level (HBM) VESD 4 kV Operating Ambient Temperature TA -40～125 ℃ Storage Temperature Tstg -50～150 ℃ Electrical Characteristics (VCC=3.0V, TA=25°C) Characteristic Symbol Test Conditions Min. Typ. Max. Units Supply Voltage VCC Operating 1.8 3.0 5.5 V Output Stress Voltage Vstress 5.5 V Output leak Current Ileak OUT=High，Vcc=3V，Vout=3V 1 μA Output Turn-off Resistance Roff OUT=High Output Low Voltage Vol OUT=Low，Vcc=3V，Isink=3mA 0.1 V Output Turn-on Resistance Ron OUT=Low 10 Ω Supply Current Icc Output open Switching Frequency F MΩ 10 200 nA 50 Hz Note: A 1kOhm pull-up resistor is connected between VCC and VOUT, and a 0.1μF capacitor is connected between VCC and GND during all tests in the table above. Magnetic Characteristics (VCC = 3.0V, TA = 25°C) Characteristic Symbol Min. Typ. Max. Units Operate Point BOP 17 G Release Point BRP 13 G Hysteresis BH 4 G Note: A 1kOhm pull-up resistor is connected between VCC and VOUT, and a 0.1μF capacitor is connected between VCC and GND during all tests in the table above. 2/5 Datasheet V1.2 Voltage and Temperature Characteristics Voltage Characteristics 25.0 Temperature Characteristics 25.0 OP/RP(GS) OP/RP(GS) 20.0 15.0 10.0 5.0 OP 0.0 1.8 3 20.0 15.0 10.0 RP 5.0 0.0 -50 5.5 VCC(V) OP -25 0 25 50 75 Temperature(℃) Output Behavior vs. Magnetic Polarity Magnetic Polarity Test Conditions Output B > BOP Low (On) B < BRP High (Off) B > BOP Low (On) B < BRP High (Off) South Pole for TO92 Package North Pole for SOT23 Package Note: The output is “High” when power is turned on under zero magnetic field. Sensing Direction Switching Behavior of TMR1162 Application Information The output of the TMR1162 switches low (turns on) when a magnetic field parallel to the TMR sensor exceeds the operate point threshold, BOP. When the magnetic field is reduced below the release point, BRP, the device output goes high (turns off). The difference between the magnetic operate point and release point is the hysteresis BH of the device. It is strongly recommended that an external bypass capacitor be connected in close proximity to the device between the supply and ground to reduce noise. The typical value of the external capacitor is 0.1μF. 3/5 RP 100 125 Datasheet Package Information SOT23-3 Package TO-92S Package TMR Sensor Position Top and side view（unit: mm） 4/5 V1.2 Datasheet V1.2 MultiDimension Technology Co., Ltd. Address: No.7 Guangdong Road, Zhangjiagang Free Trade Zone, Jiangsu, 215634, China Web: www.dowaytech.com/en Email: info@dowaytech.com The information provided herein by MultiDimension Technology Co., Ltd. (hereinafter MultiDimension) is believed to be accurate and reliable. Publication neither conveys nor implies any license under patent or other industrial or intellectual property rights. MultiDimension reserves the right to make changes to product specifications for the purpose of improving product quality, reliability, and functionality. MultiDimension does not assume any liability arising out of the application and use of its products. MultiDimension’s customers using or selling this product for use in appliances, devices, or systems where malfunction can reasonably be expected to result in personal injury do so at their own risk and agree to fully indemnify MultiDimension for any damages resulting from such applications. 5/5