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S-57GNNL3S-A6T8U

S-57GNNL3S-A6T8U

  • 厂商:

    ABLIC(艾普凌科)

  • 封装:

    SMD6

  • 描述:

    MAGNETIC SWITCH UNIPOLAR HSNT-6

  • 数据手册
  • 价格&库存
S-57GNNL3S-A6T8U 数据手册
S-57GS/GN S Series www.ablic.com AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 © ABLIC Inc., 2019-2021 This IC, developed by CMOS technology, is a high-accuracy Hall effect switch IC that operates with high temperature and high-withstand voltage. The output voltage level changes when this IC detects the intensity level of magnetic flux density. Using this IC with a magnet makes it possible to detect the open / close in various devices. ABLIC Inc. offers a "magnetic simulation service" that provides the ideal combination of magnets and our Hall effect ICs for customer systems. Our magnetic simulation service will reduce prototype production, development period and development costs. In addition, it will contribute to optimization of parts to realize high cost performance. For more information regarding our magnetic simulation service, contact our sales representatives. ABLIC Inc. offers FIT rate calculated based on actual customer usage conditions in order to support customer functional safety design. For more information regarding our FIT rate calculation, contact our sales representatives. Caution This product can be used in vehicle equipment and in-vehicle equipment. Before using the product for these purposes, it is imperative to contact our sales representatives.  Features • Uses a thin (t0.80 mm max.) TSOT-23-3S or ultra-thin (t0.50 mm max.) HSNT-6(2025) package, contributing to the enhancement of the designs of devices • Contributes to accurate mechanism operation with high-accuracy magnetic characteristics (Refer to " Magnetic Characteristics" for details.) • Suitable for devices which require high quality due to the production system of this IC which certifies automotive application quality • Contributes to device safe design with a built-in reverse voltage protection circuit and output current limit circuit  Specifications • Pole detection: • Output logic*1: • Output form*1: • Magnetic sensitivity*1:  Applications Unipolar detection Active "L" Active "H" Nch open-drain output Nch driver + built-in pull-up resistor (1.2 kΩ typ.) BOP = 3.0 mT typ. BOP = 6.0 mT typ. BOP = 10.0 mT typ. BOP = 15.0 mT typ. fC = 500 kHz typ. tD = 8.0 μs typ. VDD = 2.7 V to 26.0 V • Automobile equipment • Housing equipment • Industrial equipment  Packages • TSOT-23-3S • HSNT-6(2025) • Chopping frequency: • Output delay time: • Power supply voltage range*2: • Built-in regulator • Built-in reverse voltage protection circuit • Built-in output current limit circuit • Operation temperature range: Ta = −40°C to +150°C • Lead-free (Sn 100%), halogen-free • AEC-Q100 qualified*3 *1. The option can be selected. *2. VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.) *3. Contact our sales representatives for details. 1 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00  Block Diagrams 1. Nch open-drain output product VDD Reverse voltage protection circuit Regulator OUT Chopper stabilized amplifier *1 Output current limit circuit VSS *1. Parasitic diode Figure 1 2. Nch driver + built-in pull-up resistor product VDD Reverse voltage protection circuit Regulator Chopper stabilized amplifier *1 Output current limit circuit VSS *1. Parasitic diode Figure 2 2 OUT AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series  AEC-Q100 Qualified This IC supports AEC-Q100 for operation temperature grade 0. Contact our sales representatives for details of AEC-Q100 reliability specification.  Product Name Structure 1. Product name S-57G x x x x S - xxxx U Environmental code U: Lead-free (Sn 100%), halogen-free Package abbreviation and IC packing specifications*1 L3T2: TSOT-23-3S, Tape A6T8: HSNT-6(2025), Tape Operation temperature S: Ta = −40°C to +150°C Magnetic sensitivity 1: BOP = 3.0 mT typ. 3: BOP = 6.0 mT typ. 4: BOP = 10.0 mT typ. 5: BOP = 15.0 mT typ. Output logic L: Active "L" H: Active "H" Output form N: Nch open-drain output 1: Nch driver + built-in pull-up resistor (1.2 kΩ typ.) Pole detection S: Detection of S pole N: Detection of N pole *1. 2. Refer to the tape drawing. Packages Table 1 Package Name TSOT-23-3S HSNT-6(2025) Dimension MP003-E-P-SD PJ006-B-P-SD Package Drawing Codes Tape MP003-E-C-SD PJ006-B-C-SD Reel MP003-E-R-SD PJ006-B-R-SD Land − PJ006-B-LM-SD Stencil Opening − PJ006-B-LM-SD 3 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 3. Product name list 3. 1 TSOT-23-3S Table 2 Product Name Output Form Power Supply Voltage Range Pole Detection S-57GSNL1S-L3T2U Nch open-drain output VDD = 2.7 V to 26.0 V S pole S-57GSNL3S-L3T2U Nch open-drain output VDD = 2.7 V to 26.0 V S pole S-57GNNL3S-L3T2U Nch open-drain output VDD = 2.7 V to 26.0 V N pole S-57GSNL5S-L3T2U Nch open-drain output VDD = 2.7 V to 26.0 V S pole Remark Please contact our sales representatives for products other than the above. 3. 2 Output Logic Active "L" Active "L" Active "L" Active "L" Magnetic Sensitivity (BOP) Output Logic Active "L" Active "L" Magnetic Sensitivity (BOP) 3.0 mT typ. 6.0 mT typ. 6.0 mT typ. 15.0 mT typ. HSNT-6(2025) Table 3 Product Name Output Form Power Supply Voltage Range Pole Detection S-57GSNL3S-A6T8U Nch open-drain output VDD = 2.7 V to 26.0 V S pole S-57GNNL3S-A6T8U Nch open-drain output VDD = 2.7 V to 26.0 V N pole Remark Please contact our sales representatives for products other than the above. 4 6.0 mT typ. 6.0 mT typ. AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series  Pin Configurations 1. TSOT-23-3S Top view Table 4 1 Pin No. 1 2 3 2 Symbol Description GND pin Power supply pin Output pin VSS VDD OUT 3 Figure 3 2. HSNT-6(2025) Top view 1 2 3 Table 5 6 5 4 Bottom view 6 5 4 1 2 3 Pin No. 1 2 3 4 5 6 Symbol VDD NC*2 OUT NC*2 VSS NC*2 Description Power supply pin No connection Output pin No connection GND pin No connection *1 Figure 4 *1. Connect the heatsink of backside at shadowed area to the board, and set electric potential open or GND. However, do not use it as the function of electrode. *2. The NC pin is electrically open. The NC pin can be connected to the VDD pin or the VSS pin. 5 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00  Absolute Maximum Ratings Table 6 Item Power supply voltage Symbol Nch open-drain output product Nch driver + built-in pull-up resistor (1.2 kΩ typ.) product VDD Power supply current Output current IDD IOUT Nch open-drain output product Nch driver + built-in pull-up resistor (1.2 kΩ typ.) product Output voltage VOUT Junction temperature Operation ambient temperature Storage temperature Caution Tj Topr Tstg Absolute Maximum Rating VSS − 28.0 to VSS + 28.0 Unit VSS − 9.0 to VSS + 9.0 V ±10 ±10 VSS − 0.3 to VSS + 28.0 mA mA V VSS − 0.3 to VDD + 0.3 V −40 to +170 −40 to +150 −40 to +170 °C °C °C V The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions.  Thermal Resistance Value Table 7 Item Symbol Condition TSOT-23-3S Junction-to-ambient thermal resistance*1 θJA HSNT-6(2025) *1. Test environment: compliance with JEDEC STANDARD JESD51-2A Remark 6 Refer to " Power Dissipation" and "Test Board" for details. Board A Board B Board C Board D Board E Board A Board B Board C Board D Board E Min. − − − − − − − − − − Typ. 225 190 − − − 180 128 43 44 36 Max. − − − − − − − − − − Unit °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series  Electrical Characteristics 1. Nch open-drain output product Table 8 (Ta = −40°C to +150°C, VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Item Power supply voltage Current consumption Current consumption during reverse connection Low level output voltage Leakage current Output limit current Output delay time*2 Chopping frequency*2 Start up time*2 Output rise time*2 Output fall time*2 *1. *2. 2. Symbol Condition Min. Typ.*1 Max. Unit − − 2.7 − 12.0 4.0 26.0 4.5 V mA Test Circuit − 1 −0.1 − − mA 1 − − 11 − 250 − − − − − − 8 500 25 − − 0.4 10 35 16 − 40 1.0 1.0 V μA mA μs kHz μs μs μs 2 3 3 − − 4 5 5 VDD IDD VDD = −26.0 V IDDREV VOL IOUT = 5 mA, VOUT = "L" ILEAK VOUT = "H" IOM VOUT = 12.0 V tD − fC − − tPON C = 20 pF, R = 820 Ω tR C = 20 pF, R = 820 Ω tF Typ. value when Ta = +25°C, VDD = 12.0 V. This item is guaranteed by design. Nch driver + built-in pull-up resistor (1.2 kΩ typ.) product Table 9 (Ta = −40°C to +150°C, VDD = 2.7 V to 5.5 V, VSS = 0 V unless otherwise specified) Item Symbol Condition − Power supply voltage VDD Current consumption IDD VOUT = "H" Low level output voltage VOL IOUT = 0 mA, VOUT = "L" High level output voltage VOH IOUT = 0 mA, VOUT = "H" Output limit current IOM VDD = VOUT = 5.0 V − Output delay time*2 tD Chopping frequency*2 fC − − Start up time*2 tPON Output rise time*2 tR C = 20 pF Output fall time*2 tF C = 20 pF − Pull-up resistor RL *1. Typ. value when Ta = +25°C, VDD = 5.0 V. *2. This item is guaranteed by design. Caution Min. Typ.*1 Max. Unit 2.7 − − VDD × 0.9 11 − 250 − − − 0.9 5.0 4.0 − − − 8 500 25 − − 1.2 5.5 4.5 0.4 − 35 16 − 40 1.0 1.0 1.5 V mA V V mA μs kHz μs μs μs kΩ Test Circuit − 1 2 2 3 − − 4 5 5 − Due to limitation of the power dissipation, these values may not be satisfied. Attention should be paid to the power dissipation when using in high temperature operation environments. 7 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 S pole BOPS Magnetic flux density applied to this IC (B) BRPS 0 BRPN BOPN N pole tD tD tF Output voltage (VOUT) (Product with S pole detection and active "L") tR 90% 10% tD tD tR tF 90% Output voltage (VOUT) (Product with S pole detection and active "H") 10% tD tD tF tR 90% Output voltage (VOUT) (Product with N pole detection and active "L") 10% tD tD tR 90% Output voltage (VOUT) (Product with N pole detection and active "H") 10% Figure 5 Operation Timing 8 tF AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series  Magnetic Characteristics 1. TSOT-23-3S 1. 1 Product with S pole detection 1. 1. 1 BOP = 3.0 mT typ. (Ta = +25°C) Table 10 Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 1. 1. 2 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit 2.0 3.0 4.3 mT 4 1.2 2.2 3.2 mT 4 − − 0.8 mT 4 BOP = 3.0 mT typ. (Ta = −40°C to +150°C*4) Table 11 (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 1. 1. 3 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS Min. 1.5 0.5 − Typ. 3.0 2.2 0.8 Max. 6.0 4.5 − Unit mT mT mT Test Circuit 4 4 4 BOP = 6.0 mT typ. (Ta = +25°C) Table 12 Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 1. 1. 4 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit 4.0 6.0 8.0 mT 4 3.0 4.5 6.0 mT 4 − − 1.5 mT 4 BOP = 6.0 mT typ. (Ta = −40°C to +150°C*4) Table 13 (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS Min. 3.0 2.0 − Typ. 6.0 4.5 1.5 Max. 9.0 7.0 − Unit mT mT mT Test Circuit 4 4 4 9 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 1. 1. 5 BOP = 10.0 mT typ. (Ta = +25°C) Table 14 Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 1. 1. 6 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit 7.2 10.0 12.6 mT 4 5.2 7.5 9.8 mT 4 − − 2.5 mT 4 BOP = 10.0 mT typ. (Ta = −40°C to +150°C*4) Table 15 (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 1. 1. 7 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS Min. 5.6 4.0 − Typ. 10.0 7.5 2.5 Max. 13.8 10.8 − Unit mT mT mT Test Circuit 4 4 4 BOP = 15.0 mT typ. (Ta = +25°C) Table 16 Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 1. 1. 8 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit 11.2 15.0 19.2 mT 4 8.4 12.0 15.0 mT 4 − − 3.0 mT 4 BOP = 15.0 mT typ. (Ta = −40°C to +150°C*4) Table 17 (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 10 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS Min. 8.8 6.8 − Typ. 15.0 12.0 3.0 Max. 21.4 16.8 − Unit mT mT mT Test Circuit 4 4 4 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series 1. 2 Product with N pole detection 1. 2. 1 BOP = 3.0 mT typ. (Ta = +25°C) Table 18 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 1. 2. 2 Symbol BOPN BRPN BHYSN Condition − − BHYSN = |BOPN − BRPN| (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit −4.3 −3.0 −2.0 mT 4 −3.2 −2.2 −1.2 mT 4 − − 0.8 mT 4 BOP = 3.0 mT typ. (Ta = −40°C to +150°C*4) Table 19 (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 1. 2. 3 Symbol BOPN BRPN BHYSN Condition − − BHYSN = |BOPN − BRPN| Min. −6.0 −4.5 − Typ. −3.0 −2.2 0.8 Max. −1.5 −0.5 − Unit mT mT mT Test Circuit 4 4 4 BOP = 6.0 mT typ. (Ta = +25°C) Table 20 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 1. 2. 4 Symbol BOPN BRPN BHYSN Condition − − BHYSN = |BOPN − BRPN| (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit −8.0 −6.0 −4.0 mT 4 −6.0 −4.5 −3.0 mT 4 − − 1.5 mT 4 BOP = 6.0 mT typ. (Ta = −40°C to +150°C*4) Table 21 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole Symbol BOPN BRPN BHYSN (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Condition Min. Typ. Max. Unit Test Circuit − −9.0 −6.0 −3.0 mT 4 − −7.0 −4.5 −2.0 mT 4 BHYSN = |BOPN − BRPN| − − 1.5 mT 4 11 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 1. 2. 5 BOP = 10.0 mT typ. (Ta = +25°C) Table 22 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 1. 2. 6 Symbol BOPN BRPN BHYSN Condition − − BHYSN = |BOPN − BRPN| (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit −12.6 −10.0 −7.2 mT 4 −9.8 −7.5 −5.2 mT 4 − − 2.5 mT 4 BOP = 10.0 mT typ. (Ta = −40°C to +150°C*4) Table 23 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 1. 2. 7 Symbol BOPN BRPN BHYSN (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Condition Min. Typ. Max. Unit Test Circuit − −13.8 −10.0 −5.6 mT 4 − −10.8 −7.5 −4.0 mT 4 BHYSN = |BOPN − BRPN| − − 2.5 mT 4 BOP = 15.0 mT typ. (Ta = +25°C) Table 24 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 1. 2. 8 Symbol BOPN BRPN BHYSN Condition − − BHYSN = |BOPN − BRPN| (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit −19.2 −15.0 −11.2 mT 4 −15.0 −12.0 −8.4 mT 4 − − 3.0 mT 4 BOP = 15.0 mT typ. (Ta = −40°C to +150°C*4) Table 25 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole *1. *2. *3. *4. Symbol BOPN BRPN BHYSN (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Condition Min. Typ. Max. Unit Test Circuit − −21.4 −15.0 −8.8 mT 4 − −16.8 −12.0 −6.8 mT 4 BHYSN = |BOPN − BRPN| − − 3.0 mT 4 BOPN, BOPS: Operation points BOPN and BOPS are the values of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied to this IC by the magnet (N pole or S pole) is increased (by moving the magnet closer). Even when the magnetic flux density exceeds BOPN or BOPS, VOUT retains the status. BRPN, BRPS: Release points BRPN and BRPS are the values of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied to this IC by the magnet (N pole or S pole) is decreased (the magnet is moved further away). Even when the magnetic flux density falls below BRPN or BRPS, VOUT retains the status. BHYSN, BHYSS: Hysteresis widths BHYSN and BHYSS are the difference between BOPN and BRPN, and BOPS and BRPS, respectively. This item is guaranteed by design. Caution Due to limitation of the power dissipation, these values may not be satisfied. Attention should be paid to the power dissipation when using in high temperature operation environments. Remark 12 The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss. AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series 2. HSNT-6(2025) 2. 1 Product with S pole detection 2. 1. 1 BOP = 3.0 mT typ. (Ta = +25°C) Table 26 Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 2. 1. 2 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit 1.7 3.0 4.7 mT 4 0.7 2.2 3.6 mT 4 − − 0.8 mT 4 BOP = 3.0 mT typ. (Ta = −40°C to +150°C*4) Table 27 (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 2. 1. 3 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS Min. 1.0 0.2 − Typ. 3.0 2.2 0.8 Max. 6.2 5.0 − Unit mT mT mT Test Circuit 4 4 4 BOP = 6.0 mT typ. (Ta = +25°C) Table 28 Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 2. 1. 4 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit 3.7 6.0 8.3 mT 4 2.5 4.5 6.5 mT 4 − − 1.5 mT 4 BOP = 6.0 mT typ. (Ta = −40°C to +150°C*4) Table 29 (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS Min. 2.9 1.7 − Typ. 6.0 4.5 1.5 Max. 9.1 7.3 − Unit mT mT mT Test Circuit 4 4 4 13 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 2. 1. 5 BOP = 10.0 mT typ. (Ta = +25°C) Table 30 Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 2. 1. 6 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit 7.4 10.0 13.1 mT 4 5.1 7.5 10.1 mT 4 − − 2.5 mT 4 BOP = 10.0 mT typ. (Ta = −40°C to +150°C*4) Table 31 (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 2. 1. 7 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS Min. 3.8 2.7 − Typ. 10.0 7.5 2.5 Max. 16.1 12.5 − Unit mT mT mT Test Circuit 4 4 4 BOP = 15.0 mT typ. (Ta = +25°C) Table 32 Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 2. 1. 8 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit 10.6 15.0 19.9 mT 4 8.1 12.0 15.8 mT 4 − − 3.0 mT 4 BOP = 15.0 mT typ. (Ta = −40°C to +150°C*4) Table 33 (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 14 Symbol BOPS BRPS BHYSS Condition − − BHYSS = BOPS − BRPS Min. 6.4 4.6 − Typ. 15.0 12.0 3.0 Max. 23.5 19.6 − Unit mT mT mT Test Circuit 4 4 4 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series 2. 2 Product with N pole detection 2. 2. 1 BOP = 3.0 mT typ. (Ta = +25°C) Table 34 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 2. 2. 2 Symbol BOPN BRPN BHYSN Condition − − BHYSN = |BOPN − BRPN| (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit −4.7 −3.0 −1.7 mT 4 −3.6 −2.2 −0.7 mT 4 − − 0.8 mT 4 BOP = 3.0 mT typ. (Ta = −40°C to +150°C*4) Table 35 (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 2. 2. 3 Symbol BOPN BRPN BHYSN Condition − − BHYSN = |BOPN − BRPN| Min. −6.2 −5.0 − Typ. −3.0 −2.2 0.8 Max. −1.0 −0.2 − Unit mT mT mT Test Circuit 4 4 4 BOP = 6.0 mT typ. (Ta = +25°C) Table 36 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 2. 2. 4 Symbol BOPN BRPN BHYSN Condition − − BHYSN = |BOPN − BRPN| (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit −8.3 −6.0 −3.7 mT 4 −6.5 −4.5 −2.5 mT 4 − − 1.5 mT 4 BOP = 6.0 mT typ. (Ta = −40°C to +150°C*4) Table 37 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole Symbol BOPN BRPN BHYSN (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Condition Min. Typ. Max. Unit Test Circuit − −9.1 −6.0 −2.9 mT 4 − −7.3 −4.5 −1.7 mT 4 BHYSN = |BOPN − BRPN| − − 1.5 mT 4 15 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 2. 2. 5 BOP = 10.0 mT typ. (Ta = +25°C) Table 38 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 2. 2. 6 Symbol BOPN BRPN BHYSN Condition − − BHYSN = |BOPN − BRPN| (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit −13.1 −10.0 −7.4 mT 4 −10.1 −7.5 −5.1 mT 4 − − 2.5 mT 4 BOP = 10.0 mT typ. (Ta = −40°C to +150°C*4) Table 39 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 2. 2. 7 Symbol BOPN BRPN BHYSN (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Condition Min. Typ. Max. Unit Test Circuit − −16.1 −10.0 −3.8 mT 4 − −12.5 −7.5 −2.7 mT 4 BHYSN = |BOPN − BRPN| − − 2.5 mT 4 BOP = 15.0 mT typ. (Ta = +25°C) Table 40 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 2. 2. 8 Symbol BOPN BRPN BHYSN Condition − − BHYSN = |BOPN − BRPN| (VDD = 5.0 V, VSS = 0 V unless otherwise specified) Min. Typ. Max. Unit Test Circuit −19.9 −15.0 −10.6 mT 4 −15.8 −12.0 −8.1 mT 4 − − 3.0 mT 4 BOP = 15.0 mT typ. (Ta = −40°C to +150°C*4) Table 41 Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole *1. *2. *3. *4. Symbol BOPN BRPN BHYSN (VDD = 2.7 V to 26.0 V, VSS = 0 V unless otherwise specified) Condition Min. Typ. Max. Unit Test Circuit − −23.5 −15.0 −6.4 mT 4 − −19.6 −12.0 −4.6 mT 4 BHYSN = |BOPN − BRPN| − − 3.0 mT 4 BOPN, BOPS: Operation points BOPN and BOPS are the values of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied to this IC by the magnet (N pole or S pole) is increased (by moving the magnet closer). Even when the magnetic flux density exceeds BOPN or BOPS, VOUT retains the status. BRPN, BRPS: Release points BRPN and BRPS are the values of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied to this IC by the magnet (N pole or S pole) is decreased (the magnet is moved further away). Even when the magnetic flux density falls below BRPN or BRPS, VOUT retains the status. BHYSN, BHYSS: Hysteresis widths BHYSN and BHYSS are the difference between BOPN and BRPN, and BOPS and BRPS, respectively. This item is guaranteed by design. Caution Due to limitation of the power dissipation, these values may not be satisfied. Attention should be paid to the power dissipation when using in high temperature operation environments. Remark 16 The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss. AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series  Test Circuits A R*1 820 Ω VDD VDD OUT OUT VSS V VSS *1. A Resistor (R) is unnecessary for Nch driver + built-in pull-up resistor product. Figure 6 Figure 7 Test Circuit 1 VDD VDD VSS R*1 820 Ω OUT A OUT VSS V *1. Figure 8 Test Circuit 2 Test Circuit 3 V Resistor (R) is unnecessary for Nch driver + built-in pull-up resistor product. Figure 9 Test Circuit 4 R*1 820 Ω VDD OUT VSS *1. C 20 pF V Resistor (R) is unnecessary for Nch driver + built-in pull-up resistor product. Figure 10 Test Circuit 5 17 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00  Standard Circuit VDD CIN 0.1 μF *1. R*1 820 Ω OUT VSS Resistor (R) is unnecessary for Nch driver + built-in pull-up resistor product. Figure 11 Caution The above connection diagram and constants will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constants. 18 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series  Operation 1. Direction of applied magnetic flux This IC detects the magnetic flux density which is perpendicular to the package marking surface. A magnetic field is defined as positive when marking side of the package is the S pole, and negative when it is the N pole. Figure 12 and Figure 13 show polarity in a magnetic field and direction in which magnetic flux is being applied. 1. 1 TSOT-23-3S 1. 2 HSNT-6(2025) N S N S Marking surface Marking surface Figure 12 2. Figure 13 Position of Hall sensor Figure 14 and Figure 15 show the position of Hall sensor. The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as described below. The following also shows the distance (typ. value) between the marking surface and the chip surface of a package. 2. 1 TSOT-23-3S 2. 2 HSNT-6(2025) Top view 2 Top view The center of Hall sensor, in this φ0.3 mm 1 The center of Hall sensor, in this φ0.3 mm 1 6 2 5 3 4 3 0.22 mm (typ.) Figure 14 0.16 mm (typ.) Figure 15 19 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 3. Basic operation This IC changes the output voltage (VOUT) according to the level of the magnetic flux density (N pole or S pole) applied by a magnet. 3. 1 Product with S pole detection 3. 1. 1 Active "L" When the magnetic flux density of the S pole perpendicular to the marking surface exceeds the operation point (BOPS) after the S pole of a magnet is moved closer to the marking surface of this IC, VOUT changes from "H" to "L". When the S pole of a magnet is moved further away from the marking surface of this IC and the magnetic flux density is lower than the release point (BRPS), VOUT changes from "L" to "H". Figure 16 shows the relationship between the magnetic flux density and VOUT. VOUT BHYSS H L N pole 0 BRPS BOPS S pole Magnetic flux density (B) Figure 16 3. 1. 2 Active "H" When the magnetic flux density of the S pole perpendicular to the marking surface exceeds the operation point (BOPS) after the S pole of a magnet is moved closer to the marking surface of this IC, VOUT changes from "L" to "H". When the S pole of a magnet is moved further away from the marking surface of this IC and the magnetic flux density is lower than the release point (BRPS), VOUT changes from "H" to "L". Figure 17 shows the relationship between the magnetic flux density and VOUT. VOUT BHYSS H L N pole 0 BRPS Magnetic flux density (B) Figure 17 20 BOPS S pole AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series 3. 2 Product with N pole detection 3. 2. 1 Active "L" When the magnetic flux density of the N pole perpendicular to the marking surface exceeds the operation point (BOPN) after the N pole of a magnet is moved closer to the marking surface of this IC, VOUT changes from "H" to "L". When the N pole of a magnet is moved further away from the marking surface of this IC and the magnetic flux density of the N pole is lower than the release point (BRPN), VOUT changes from "L" to "H". Figure 18 shows the relationship between the magnetic flux density and VOUT. VOUT BHYSN H L N pole BOPN S pole 0 BRPN Magnetic flux density (B) Figure 18 3. 2. 2 Active "H" When the magnetic flux density of the N pole perpendicular to the marking surface exceeds the operation point (BOPN) after the N pole of a magnet is moved closer to the marking surface of this IC, VOUT changes from "L" to "H". When the N pole of a magnet is moved further away from the marking surface of this IC and the magnetic flux density of the N pole is lower than the release point (BRPN), VOUT changes from "H" to "L". Figure 19 shows the relationship between the magnetic flux density and VOUT. VOUT BHYSN H L N pole BOPN 0 BRPN S pole Magnetic flux density (B) Figure 19 21 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 4. Power-on operation The output voltage (VOUT) of this IC immediately after power-on is "H". After the start up time (tPON) is passed, the IC changes VOUT according to the level of the magnetic flux density (N pole or S pole) applied by a magnet. 4. 1 Product with S pole detection 4. 1. 1 Active "L" Figure 20 shows the timing chart at power-on for active "L" product. The initial output voltage at rising of power supply voltage (VDD) is "H". In case of B > BOPS at the time when tPON is passed after rising of VDD, VOUT changes from "H" to "L". In case of B < BOPS at the time when tPON is passed after rising of VDD, VOUT retains "H". Power supply voltage (VDD) tPON Output voltage (VOUT) (B > BOPS) "H" Output voltage (VOUT) (B < BOPS) "H" "L" Latching Figure 20 4. 1. 2 Active "H" Figure 21 shows the timing chart at power-on for active "H" product. The initial output voltage at rising of power supply voltage (VDD) is "H". In case of B > BOPS at the time when tPON is passed after rising of VDD, VOUT retains "H". In case of B < BOPS at the time when tPON is passed after rising of VDD, VOUT changes from "H" to "L". Power supply voltage (VDD) tPON Output voltage (VOUT) (B > BOPS) "H" Output voltage (VOUT) (B < BOPS) "H" Figure 21 22 Latching "L" AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series 4. 2 Product with N pole detection 4. 2. 1 Active "L" Figure 22 shows the timing chart at power-on for active "L" product. The initial output voltage at rising of power supply voltage (VDD) is "H". In case of B < BOPN at the time when tPON is passed after rising of VDD, VOUT changes from "H" to "L". In case of B > BOPN at the time when tPON is passed after rising of VDD, VOUT retains "H". Power supply voltage (VDD) tPON Output voltage (VOUT) (B < BOPN) "H" Output voltage (VOUT) (B > BOPN) "H" "L" Latching Figure 22 4. 2. 2 Active "H" Figure 23 shows the timing chart at power-on for active "H" product. The initial output voltage at rising of power supply voltage (VDD) is "H". In case of B < BOPN at the time when tPON is passed after rising of VDD, VOUT retains "H". In case of B > BOPN at the time when tPON is passed after rising of VDD, VOUT changes from "H" to "L". Power supply voltage (VDD) tPON Output voltage (VOUT) (B < BOPN) "H" Output voltage (VOUT) (B > BOPN) "H" Latching "L " Figure 23 23 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00  Precautions • If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feed-through current. Take care with the pattern wiring to ensure that the impedance of the power supply is low. • Note that the IC may malfunction if the power supply voltage rapidly changes. When the IC is used under the environment where the power supply voltage rapidly changes, it is recommended to judge the output voltage of the IC by reading it multiple times. • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • Note that the output voltage may rarely change if the magnetic flux density between the operation point and the release point is applied to this IC continuously for a long time. • Although this IC has a built-in output current limit circuit, it may suffer physical damage such as product deterioration under the environment where the absolute maximum ratings are exceeded. • Although this IC has a built-in reverse voltage protection circuit, it may suffer physical damage such as product deterioration under the environment where the absolute maximum ratings are exceeded. • The application conditions for the power supply voltage, the pull-up voltage, and the pull-up resistor should not exceed the power dissipation. • Large stress on this IC may affect the magnetic characteristics. Avoid large stress which is caused by the handling during or after mounting the IC on a board. • Since the package heat radiation differs according to the conditions of the application, perform thorough evaluation with actual applications to confirm no problems occur. • ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 24 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series  Characteristics (Typical Data) Electrical Characteristics S-57GSxxxS, S-57GNxxxS Current consumption (IDD) vs. Temperature (Ta) VOUT = "H" 6.0 IDD [mA] 5.0 VDD = 5.5 V 3.0 VDD = 2.7 V VDD = 12.0 V 0.0 −40 −25 1. 1. 3 20 0 tD [μs] 3.0 2.0 VDD = 5.5 V 10 1. 1. 4 20 Caution 5 10 30 Ta = −40°C 5 VDD = 12.0 V 25 15 20 25 VDD [V] Output delay time (tD) vs. Power supply voltage (VDD) 0 10 VDD = 2.7 V 0 Ta = +150°C 15 VDD = 26.0 V 0 −40 −25 Ta = +150°C Ta = +25°C 0 50 75 100 125 150 Ta [°C] 0 5 10 15 20 VDD [V] 25 30 VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.). Comply with power supply voltage range and do not exceed absolute maximum ratings. S-57GSNxxS, S-57GNNxxS 1. 2. 1 Low level output voltage (VOL) vs. Temperature (Ta) 1. 2. 2 IOUT = 5 mA 0.6 IOUT = 5 mA 0.5 VDD = 26.0 V 0.4 0.3 Low level output voltage (VOL) vs. Power supply voltage (VDD) 0.6 0.5 VOL [V] 4.0 0.0 25 5 Ta = −40°C Ta = +25°C 1.0 50 75 100 125 150 Ta [°C] Output delay time (tD) vs. Temperature (Ta) 15 VOUT = "H" 5.0 4.0 2.0 Current consumption (IDD) vs. Power supply voltage (VDD) 6.0 VDD = 26.0 V 1.0 1. 2 1. 1. 2 IDD [mA] 1. 1. 1 tD [μs] 1. 1 VDD = 12.0 V VDD = 5.5 V 0.2 0.1 0.0 −40 −25 VDD = 2.7 V VOL [V] 1. 0.4 Ta = +25°C 0.3 0.2 0.1 Ta = −40°C 0.0 0 25 50 75 100 125 150 Ta [°C] Ta = +150°C 0 5 10 15 20 VDD [V] 25 30 25 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 1. 3 S-57GS1xxS, S-57GN1xxS 1. 3. 1 Low level output voltage (VOL) vs. Temperature (Ta) 1. 3. 2 IOUT = 0 mA 0.6 0.5 0.2 VDD = 5.5 V VDD = 5.0 V VDD = 2.7 V VOL [V] VOL [V] 0.3 0.0 −40 −25 25 0.2 50 75 100 125 150 Ta [°C] High level output voltage (VOH) vs. Temperature (Ta) 2 1. 3. 4 IOUT = 0 mA 3.0 2.0 1.0 0.0 −40 −25 VDD = 2.7 V 4 VDD [V] 5 6 High level output voltage (VOH) vs. Power supply voltage (VDD) IOUT = 0 mA 5.0 VDD = 5.0 V VDD = 5.5 V VOH [V] 4.0 3 6.0 5.0 VOH [V] Ta = +150°C Ta = +25°C Ta = −40°C 0.3 0.0 0 6.0 26 0.4 0.1 0.1 1. 3. 3 IOUT = 0 mA 0.6 0.5 0.4 Low level output voltage (VOL) vs. Power supply voltage (VDD) Ta = +150°C 4.0 3.0 Ta = +25°C Ta = −40°C 2.0 1.0 0.0 0 25 50 75 100 125 150 Ta [°C] 2 3 4 VDD [V] 5 6 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series 2. Magnetic Characteristics 2. 1 S-57GSxx1S-L3T2U 2. 1. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta) 2. 1. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) BOPS 2.0 1.0 BRPS 0.0 −40 −25 2. 2 VDD = 5.5 V VDD = 12.0 V 5.0 4.0 BOPS 3.0 2.0 BRPS 1.0 0.0 0 25 0 50 75 100 125 150 Ta [°C] 5 10 15 20 VDD [V] 25 30 S-57GSxx3S-L3T2U 2. 2. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta) 10.0 BOP, BRP [mT] VDD = 12.0 V BOP, BRP [mT] 3.0 VDD = 5.5 V 7.5 VDD = 5.5 V BOPS BRPS 0.0 −40 −25 Caution VDD = 5.5 V 0 25 VDD = 12.0 V 50 75 100 125 150 Ta [°C] Ta = +25°C 10.0 VDD = 12.0 V 5.0 2.5 2. 2. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) BOP, BRP [mT] BOP, BRP [mT] 5.0 4.0 Ta = +25°C 6.0 6.0 7.5 BOPS 5.0 BRPS 2.5 0.0 0 5 10 15 20 VDD [V] 25 30 VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.). Comply with power supply voltage range and do not exceed absolute maximum ratings. 27 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 S-57GSxx4S-L3T2U 2. 4 13.5 VDD = 5.5 V VDD = 12.0 V 12.0 10.5 BOPS 9.0 7.5 6.0 BRPS 4.5 VDD = 5.5 V VDD = 12.0 V 3.0 1.5 0.0 −40 −25 0 25 50 75 100 125 150 Ta [°C] BOP, BRP [mT] 2. 3. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) Ta = +25°C 13.5 12.0 10.5 9.0 7.5 6.0 4.5 3.0 1.5 0.0 BOPS BRPS 5 0 10 15 20 VDD [V] 25 30 S-57GSxx5S-L3T2U 2. 4. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta) 21.0 VDD = 5.5 V VDD = 12.0 V 18.0 BOPS 15.0 12.0 9.0 BRPS VDD = 5.5 V VDD = 12.0 V 6.0 3.0 0.0 −40 −25 0 25 50 75 100 125 150 Ta [°C] Caution 28 Operation point, release point (BOP, BRP) vs. Temperature (Ta) BOP, BRP [mT] BOP, BRP [mT] 2. 3. 1 2. 4. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) BOP, BRP [mT] 2. 3 Ta = +25°C 21.0 18.0 15.0 12.0 9.0 6.0 3.0 0.0 BOPS BRPS 0 5 10 15 20 VDD [V] 25 VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.). Comply with power supply voltage range and do not exceed absolute maximum ratings. 30 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series S-57GNxx1S-L3T2U Operation point, release point (BOP, BRP) vs. Temperature (Ta) BOP, BRP [mT] 0.0 −1.0 BRPN −3.0 −4.0 BOPN VDD = 5.5 V −5.0 0 25 −1.0 −2.0 −3.0 BOPN −4.0 −5.0 −6.0 50 75 100 125 150 Ta [°C] BRPN 5 0 10 15 20 VDD [V] 25 30 S-57GNxx3S-L3T2U 2. 6. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta) 0.0 BOP, BRP [mT] VDD = 12.0 V Ta = +25°C 0.0 VDD = 12.0 V −2.0 −6.0 −40 −25 2. 6 VDD = 5.5 V 2. 5. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) BOP, BRP [mT] 2. 5. 1 −2.0 BRPN VDD = 5.5 V −8.0 BOPN −10.0 −40 −25 Caution VDD = 5.5 V 0 25 VDD = 12.0 V 50 75 100 125 150 Ta [°C] Ta = +25°C 0.0 VDD = 12.0 V −4.0 −6.0 2. 6. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) BOP, BRP [mT] 2. 5 −2.0 BRPN −4.0 −6.0 BOPN −8.0 −10.0 0 5 10 15 20 VDD [V] 25 30 VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.). Comply with power supply voltage range and do not exceed absolute maximum ratings. 29 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 S-57GNxx4S-L3T2U 2. 8 0.0 −1.5 −3.0 VDD = 5.5 V VDD = 12.0 V −4.5 −6.0 BRPN −7.5 −9.0 −10.5 BOPN −12.0 VDD = 5.5 V VDD = 12.0 V −13.5 −40 −25 0 25 50 75 100 125 150 Ta [°C] BOP, BRP [mT] 2. 7. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) 0.0 −1.5 −3.0 −4.5 −6.0 −7.5 −9.0 −10.5 −12.0 −13.5 Ta = +25°C BRPN B OPN 0 5 10 15 20 VDD [V] 25 30 S-57GNxx5S-L3T2U 2. 8. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta) 0.0 −3.0 −6.0 VDD = 5.5 V VDD = 12.0 V −9.0 BRPN −12.0 −15.0 −18.0 BOPN VDD = 5.5 V VDD = 12.0 V −21.0 −40 −25 0 25 50 75 100 125 150 Ta [°C] Caution 30 Operation point, release point (BOP, BRP) vs. Temperature (Ta) BOP, BRP [mT] BOP, BRP [mT] 2. 7. 1 2. 8. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) BOP, BRP [mT] 2. 7 0.0 −3.0 −6.0 −9.0 −12.0 −15.0 −18.0 −21.0 Ta = +25°C BRPN B OPN 0 5 10 15 20 VDD [V] 25 VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.). Comply with power supply voltage range and do not exceed absolute maximum ratings. 30 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series S-57GSxx1S-A6T8U Operation point, release point (BOP, BRP) vs. Temperature (Ta) BOP, BRP [mT] 6.0 5.0 4.0 VDD = 26.0 V VDD = 12.0 V VDD = 5.5 V VDD = 2.7 V 2.0 0.0 −40 −25 2. 10 2.7 V BRPS 0 25 5.5 V 12.0 V 26.0 V Ta = +25°C 5.0 4.0 BOPS 3.0 2.0 BRPS 1.0 0.0 50 75 100 125 150 Ta [°C] 0 5 10 15 20 VDD [V] 25 30 S-57GSxx3S-A6T8U 2. 10. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta) 10.0 BOP, BRP [mT] Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) 6.0 BOPS 3.0 1.0 2. 9. 2 BOP, BRP [mT] 2. 9. 1 8.0 BOPS VDD = 5.5 V VDD = 26.0 V VDD = 12.0 V VDD = 2.7 V 6.0 4.0 2.0 0.0 −40 −25 Caution 2.7 V BRPS 0 25 5.5 V 12.0 V 26.0 V 50 75 100 125 150 Ta [°C] 2. 10. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) Ta = +25°C 10.0 BOP, BRP [mT] 2. 9 8.0 BOPS 6.0 4.0 BRPS 2.0 0.0 0 5 10 15 20 VDD [V] 25 30 VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.). Comply with power supply voltage range and do not exceed absolute maximum ratings. 31 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 S-57GSxx4S-A6T8U 2. 12 13.5 12.0 BOPS 2.7 V 5.5 V 12.0 V 26.0 V 10.5 9.0 7.5 6.0 VDD = 5.5 V VDD = 26.0 V 4.5 VDD = 12.0 V 3.0 VDD = 2.7 V 1.5 BRPS 0.0 −40 −25 0 25 50 75 100 125 150 Ta [°C] BOP, BRP [mT] Ta = +25°C 13.5 12.0 10.5 9.0 7.5 6.0 4.5 3.0 1.5 0.0 BOPS BRPS 0 5 10 15 20 VDD [V] 25 30 S-57GSxx5S-A6T8U 2. 12. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta) 21.0 5.5 V 12.0 V 26.0 V BOPS 2.7 V 18.0 15.0 12.0 9.0 VDD = 5.5 V VDD = 26.0 V 6.0 VDD = 2.7 V VDD = 12.0 V 3.0 BRPS 0.0 −40 −25 0 25 50 75 100 125 150 Ta [°C] Caution 32 2. 11. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) BOP, BRP [mT] BOP, BRP [mT] 2. 11. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta) 2. 12. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) BOP, BRP [mT] 2. 11 Ta = +25°C 21.0 18.0 15.0 12.0 9.0 6.0 3.0 0.0 BOPS BRPS 0 5 10 15 20 VDD [V] 25 VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.). Comply with power supply voltage range and do not exceed absolute maximum ratings. 30 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series S-57GNxx1S-A6T8U 2. 13. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta) BOP, BRP [mT] 0.0 −1.0 BRPN 2.7 V 5.5 V −4.0 −5.0 2. 14 12.0 V 26.0 V VDD = 2.7 V VDD = 5.5 V VDD = 12.0 V VDD = 26.0 V BOPN −6.0 −40 −25 0 25 Ta = +25°C 0.0 −2.0 −3.0 2. 13. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) BOP, BRP [mT] 2. 13 −1.0 −3.0 BOPN −4.0 −5.0 −6.0 50 75 100 125 150 Ta [°C] BRPN −2.0 0 5 10 15 20 VDD [V] 25 30 S-57GNxx3S-A6T8U 2. 14. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta) 2. 14. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) Ta = +25°C −2.0 BRPN VDD = 5.5 V VDD = 26.0 V VDD = 2.7 V VDD = 12.0 V −4.0 −6.0 −8.0 2.7 V BOPN −10.0 −40 −25 0 25 Caution 5.5 V 12.0 V 26.0 V 50 75 100 125 150 Ta [°C] 0.0 BOP, BRP [mT] BOP, BRP [mT] 0.0 −2.0 BRPN −4.0 −6.0 BOPN −8.0 −10.0 0 5 10 15 20 VDD [V] 25 30 VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.). Comply with power supply voltage range and do not exceed absolute maximum ratings. 33 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC S-57GS/GN S Series Rev.1.3_00 S-57GNxx4S-A6T8U 2. 16 0.0 −1.5 BRPN −3.0 VDD = 5.5 V VDD = 26.0 V −4.5 VDD = 2.7 V VDD = 12.0 V −6.0 −7.5 −9.0 −10.5 −12.0 BOPN 2.7 V 5.5 V 12.0 V 26.0 V −13.5 −40 −25 0 25 50 75 100 125 150 Ta [°C] BOP, BRP [mT] 0.0 −1.5 −3.0 −4.5 −6.0 −7.5 −9.0 −10.5 −12.0 −13.5 Ta = +25°C BRPN BOPN 0 5 10 15 20 VDD [V] 25 30 S-57GNxx5S-A6T8U 2. 16. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta) 0.0 BRPN −3.0 VDD = 5.5 V VDD = 26.0 V −6.0 VDD = 2.7 V V DD = 12.0 V −9.0 −12.0 −15.0 −18.0 BOPN 2.7 V 5.5 V 12.0 V 26.0 V −21.0 −40 −25 0 25 50 75 100 125 150 Ta [°C] Caution 34 2. 15. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) BOP, BRP [mT] BOP, BRP [mT] 2. 15. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta) 2. 16. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) BOP, BRP [mT] 2. 15 0.0 −3.0 −6.0 −9.0 −12.0 −15.0 −18.0 −21.0 Ta = +25°C BRPN BOPN 0 5 10 15 20 VDD [V] 25 VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.). Comply with power supply voltage range and do not exceed absolute maximum ratings. 30 AUTOMOTIVE, 150°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.1.3_00 S-57GS/GN S Series  Power Dissipation TSOT-23-3S HSNT-6(2025) Tj = +170°C max. 4 3 2 1 B Tj = +170°C max. 5 Power dissipation (PD) [W] Power dissipation (PD) [W] 5 E 4 C 3 D 2 B 1 A A 0 0 25 50 75 100 125 150 175 0 0 25 Ambient temperature (Ta) [°C] Board Power Dissipation (PD) A B C D E 0.64 W 0.76 W − − − 50 75 100 125 150 175 Ambient temperature (Ta) [°C] Board A B C D E Power Dissipation (PD) 0.81 W 1.13 W 3.37 W 3.30 W 4.03 W 35 TSOT-23-3S Test Board IC Mount Area (1) Board A Item Size [mm] Material Number of copper foil layer Copper foil layer [mm] 1 2 3 4 Thermal via Specification 114.3 x 76.2 x t1.6 FR-4 2 Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.070 - (2) Board B Item Size [mm] Material Number of copper foil layer Copper foil layer [mm] Thermal via 1 2 3 4 Specification 114.3 x 76.2 x t1.6 FR-4 4 Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 - No. TSOT23x-A-Board-SD-1.0 ABLIC Inc. HSNT-6(2025) Test Board IC Mount Area (1) Board A Item Size [mm] Material Number of copper foil layer Copper foil layer [mm] 1 2 3 4 Thermal via Specification 114.3 x 76.2 x t1.6 FR-4 2 Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.070 - (2) Board B Item Size [mm] Material Number of copper foil layer Copper foil layer [mm] 1 2 3 4 Thermal via Specification 114.3 x 76.2 x t1.6 FR-4 4 Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 - (3) Board C Item Size [mm] Material Number of copper foil layer Copper foil layer [mm] Thermal via 1 2 3 4 Specification 114.3 x 76.2 x t1.6 FR-4 4 Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 Number: 4 Diameter: 0.3 mm No. HSNT6-B-Board-SD-1.0 enlarged view ABLIC Inc. HSNT-6(2025) Test Board IC Mount Area (4) Board D Item Size [mm] Material Number of copper foil layer Copper foil layer [mm] 1 2 3 4 Thermal via Specification 114.3 x 76.2 x t1.6 FR-4 4 2 Pattern for heat radiation: 2000mm t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 - enlarged view (5) Board E Item Size [mm] Material Number of copper foil layer Copper foil layer [mm] Thermal via 1 2 3 4 Specification 114.3 x 76.2 x t1.6 FR-4 4 2 Pattern for heat radiation: 2000mm t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 Number: 4 Diameter: 0.3 mm enlarged view No. HSNT6-B-Board-SD-1.0 ABLIC Inc. 2.9±0.2 1 2 3 0.16 0.95±0.1 +0.1 -0.06 1.9±0.2 0.42±0.1 No. MP003-E-P-SD-1.0 TITLE TSOT233S-A-PKG Dimensions No. MP003-E-P-SD-1.0 ANGLE UNIT mm ABLIC Inc. ø1.5 +0.1 -0 4.0±0.1 2.0±0.05 ø1.0 +0.1 -0 0.25±0.1 (0.4) 4.0±0.1 0.95±0.2 3.23±0.2 (1.0) 1 2 3 Feed direction No. MP003-E-C-SD-1.0 TITLE TSOT233S-A-Carrier Tape No. MP003-E-C-SD-1.0 ANGLE UNIT mm ABLIC Inc. 9.0 +1.0 - 0.0 11.4±1.0 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. MP003-E-R-SD-1.0 TITLE TSOT233S-A-Reel No. MP003-E-R-SD-1.0 ANGLE QTY. UNIT mm ABLIC Inc. 3,000 1.96±0.05 1.78±0.1 6 5 0.5 1 4 2 3 0.5 0.5 0.12±0.04 0.48±0.02 0.22±0.05 The heat sink of back side has different electric potential depending on the product. Confirm specifications of each product. Do not use it as the function of electrode. No. PJ006-B-P-SD-1.0 TITLE HSNT-6-C-PKG Dimensions No. PJ006-B-P-SD-1.0 ANGLE UNIT mm ABLIC Inc. ø1.5 +0.1 -0 2.0±0.05 4.0±0.1 ø0.5±0.1 0.25±0.05 0.65±0.05 4.0±0.1 2.25±0.05 3 21 0.5 0.5 0.5 0.5 0.5 0.5 4 5 6 Feed direction No. PJ006-B-C-SD-1.0 TITLE HSNT-6-C-Carrier Tape No. PJ006-B-C-SD-1.0 ANGLE UNIT mm ABLIC Inc. 9.0 +1.0 - 0.0 11.4±1.0 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. PJ006-B-R-SD-1.0 TITLE HSNT-6-C-Reel No. PJ006-B-R-SD-1.0 QTY. ANGLE UNIT mm ABLIC Inc. 5,000 Land Recommendation 0.50 0.35 0.50 1.44 1.78 2.10 Caution It is recommended to solder the heat sink to a board in order to ensure the heat radiation. PKG Stencil Opening 1.40 0.50 0.50 No. PJ006-B-LM-SD-1.0 0.35 Caution Mask aperture ratio of the lead mounting part is 100~120%. Mask aperture ratio of the heat sink mounting part is 30%. Mask thickness: t0.12 mm Reflow atmosphere: Nitrogen atmosphere is recommended. (Oxygen concentration: 1000ppm or less) 100~120% 30% t0.12 mm TITLE HSNT-6-C -Land &Stencil Opening PJ006-B-LM-SD-1.0 No. ANGLE UNIT mm 1000ppm ABLIC Inc. Disclaimers (Handling Precautions) 1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other right due to the use of the information described herein. 3. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information described herein. 4. Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due to the use of the products outside their specified ranges. 5. Before using the products, confirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products are strictly prohibited from using, providing or exporting for the purposes of the development of weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear, biological or chemical weapons or missiles, or use any other military purposes. 8. The products are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by ABLIC, Inc. Do not apply the products to the above listed devices and equipments. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of the products. 9. In general, semiconductor products may fail or malfunction with some probability. The user of the products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system in which the products are used must be sufficiently evaluated and judged whether the products are allowed to apply for the system on customer's own responsibility. 10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. 11. The products do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be careful when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used. 13. The information described herein contains copyright information and know-how of ABLIC Inc. The information described herein does not convey any license under any intellectual property rights or any other rights belonging to ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this document described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express permission of ABLIC Inc. 14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales representative. 15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into the English language and the Chinese language, shall be controlling. 2.4-2019.07 www.ablic.com
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